• Journal of Magnetics
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• 제6권4호
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• pp.145-147
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• 2001

The effect of interface roughness between [Ni/Mn] superlattice and pinned NiFe layer on magnetoresistance (MR) of [Ni/Mn] superlattice-based spin valve films was investigated. Antiferromagnetic phase structure and interface roughness of [Ni/Mn] superlattice spin valve films were compared in the as-deposited and the annealed samples at 240$\^{C}$, respectively. Surface morphology of spin valves was substantially flattened due to the formation of the antiferromatic NiMn phase. In case of Co insertion between Cu and NiFe, the interlace roughness and MR ratio in the annealed [NiMn] superlattice and pinned NiFe/Co layer increased more than those in the annealed [Ni/Mn] superlattice and pinned NiFe layers respectively.

• Journal of Magnetics
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• 제12권2호
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• pp.77-80
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• 2007

Recently there was a proposal for a spin filter by using the spin superlattice structure. In a certain energy range, the proposed structure exhibits a high spin filtering efficiency close to 100%. Unfortunately such energy range turns out to be narrow. In this paper, we report a method to widen the energy range by using an analogy to optical anti-reflection coating. In optics, it is well known that a stack of alternating layers of two dielectric materials can function as a highly transmissive or reflective filter for wide range of wavelength. Since electrons also have wave character as light, it would be possible to make an electronic analog of an optical filter. We demonstrate that alternating layers of two materials with different g-factors can function as a spin filter that allows electrons to be transmitted only when their spins point towards a certain particular direction. This spin-superlattice-based spin filter operates in wide energy ranges, curing the problem in the previous proposal.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1999년도 춘계연구발표회 논문개요집
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• pp.132-133
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• 1999

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2001년도 춘계연구발표회 논문개요집
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• pp.124-125
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• 2001

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1998년도 추계연구발표회 논문개요집
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• pp.16-17
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• 1998

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1997년도 추계연구발표회 논문개요집
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• pp.28-29
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• 1997

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.41-41
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• 2007

For use in spintronic materials, dilute magnetic semiconductors (DMS) are under consideration as spin injectors for spintronic devices[l]. $TiO_2$-based DMS doped by a cobalt, iron, and manganese et al. was recently reported to show ferromagnetic properties, even at temperatures above 300K and the magnetic ordering was explained in terms of carrier-induced ferromagnetism, as observed for a III-V based DMS. An anomalous Hall effect (AHE) and co-occurance of superparamagnetism in reduced Co-doped rutile $TiO_{2-\delta}$ films have also been reported[2]. Metal segregation in the reduced metal-doped rutile $TiO_2-\delta$ films still remains as problems to solve the intrinsic DMS properties. Superlattice films have been proposed to get dilute magnetic semiconductor (DMS) with intrinsicroom-temperature ferromagnetism. For a $TiO_2$-based DMS superlattice structure, each layer was alternately doped by two different transition metals (Fe and Mn) and deposited to a thickness of approximately $2.7\;{\AA}$ on r-$Al_2O_3$(1102) substrates by pulsed laser deposition. The r-$Al_2O_3$(1102) substrates with atomic steps and terrace surface were obtained by thermal annealing. Samples of $Ti_{0.94}Fe_{0.06}O_2$(TiFeO), $Ti_{0.94}Mn_{0.06}O_2$(TiMnO), and $Ti_{0.94}(Fe_{0.03}Mn_{0.03})O_2$ show a low remanent magnetization and coercive field, as well as superparamagnetic features at room temperature. On the other hand, superlattice films (TiFeO/TiMnO) show a high remanent magnetization and coercive field. An anomalous Hall effect in superlattice films exhibits hysisteresis loops with coercivities corresponding to those in the ferromagnetic Hysteresis loops. The superlattice films composed of alternating layers of $Ti_{0.94}Fe_{0.06}O_2$ and $Ti_{0.94}Mn_{0.06}O_2$ exhibit intrinsic ferromagnetic properties for dilute magnetic semiconductor applications.

• 한국자기학회지
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• 제4권4호
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• pp.340-346
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• 1994

(200) 우선방위를 보이는 Co/Cu 인공초격자에 주자장과 보조자장 두자장을 동시에 가하는 경우 각각의 자장의 세기에 따른 금속인공초격자의 저항변화에 대해 연구하였다. 자장의 방향이 서로 같은 방향인 경우 자기저항곡선의 수평적 이동이 발생하였으며 서로 직각인 경우는 자기저항최대점의 분리현상이 발견되었다. 두자장간의 각도가 $45^{\circ}$인 경우는 위의 두현상이 복합적으로 나타났다. 이러한 이중자장에 의한 자기저항곡선의 변화는 이 연구에서 제안된 자장에 따른 인공초격자의 거시 적인 스핀정렬 모델에 의해 설명될 수 있었다.

• 한국재료학회지
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• 제4권6호
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• pp.704-709
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• 1994

Crystal Structure and Magnetic Properties of $(LaS)_xCrS_2(x \approx 1.20$)가 1273K에서 $La_S_3$ , Cr, S의 혼합물의 반응으로부터 합성되었다. $(LaS)_xCrS_2( x\approx 1.20$)의 XRD회절 pattern은 monoclinic의 LaS-부격자, triclinic의 $CrS_{2}$-부격자와 그들의 초격자로서 해석되었다. 부격자의 온도의존성을 저온에서 X-선 회절분석으로 조사하였다. 77K~실온의 온도역에서 $(LaS)_xCrS_2(x \approx 1.20$)의 자기자화율을 Faraday balance법으로 측정하였다. $(LaS)_xCrS_2(x \approx 1.20$)은 실온 $\sigma$ -H plot에서 paramagnetic한 거동을 나타내었다. 관측된 유효자기 moment($\mu_{eff}$)는 $Cr^{3+}$을 spin-only에 의한 것과 $La^{3+}$을 spin-only와 orbital에 의한 것으로 계산할 경우 잘 일치되었다.

• 한국재료학회지
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• 제20권11호
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.