• Journal of Magnetics
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• v.6 no.4
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• pp.145-147
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• 2001

The effect of interface roughness between [Ni/Mn] superlattice and pinned NiFe layer on magnetoresistance (MR) of [Ni/Mn] superlattice-based spin valve films was investigated. Antiferromagnetic phase structure and interface roughness of [Ni/Mn] superlattice spin valve films were compared in the as-deposited and the annealed samples at 240$\^{C}$, respectively. Surface morphology of spin valves was substantially flattened due to the formation of the antiferromatic NiMn phase. In case of Co insertion between Cu and NiFe, the interlace roughness and MR ratio in the annealed [NiMn] superlattice and pinned NiFe/Co layer increased more than those in the annealed [Ni/Mn] superlattice and pinned NiFe layers respectively.

• Journal of Magnetics
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• v.12 no.2
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• pp.77-80
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• 2007

Recently there was a proposal for a spin filter by using the spin superlattice structure. In a certain energy range, the proposed structure exhibits a high spin filtering efficiency close to 100%. Unfortunately such energy range turns out to be narrow. In this paper, we report a method to widen the energy range by using an analogy to optical anti-reflection coating. In optics, it is well known that a stack of alternating layers of two dielectric materials can function as a highly transmissive or reflective filter for wide range of wavelength. Since electrons also have wave character as light, it would be possible to make an electronic analog of an optical filter. We demonstrate that alternating layers of two materials with different g-factors can function as a spin filter that allows electrons to be transmitted only when their spins point towards a certain particular direction. This spin-superlattice-based spin filter operates in wide energy ranges, curing the problem in the previous proposal.

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.132-133
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.124-125
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 1998.10a
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• pp.16-17
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• 1998

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.28-29
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• 1997

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.41-41
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• 2007

For use in spintronic materials, dilute magnetic semiconductors (DMS) are under consideration as spin injectors for spintronic devices[l]. $TiO_2$-based DMS doped by a cobalt, iron, and manganese et al. was recently reported to show ferromagnetic properties, even at temperatures above 300K and the magnetic ordering was explained in terms of carrier-induced ferromagnetism, as observed for a III-V based DMS. An anomalous Hall effect (AHE) and co-occurance of superparamagnetism in reduced Co-doped rutile $TiO_{2-\delta}$ films have also been reported[2]. Metal segregation in the reduced metal-doped rutile $TiO_2-\delta$ films still remains as problems to solve the intrinsic DMS properties. Superlattice films have been proposed to get dilute magnetic semiconductor (DMS) with intrinsicroom-temperature ferromagnetism. For a $TiO_2$-based DMS superlattice structure, each layer was alternately doped by two different transition metals (Fe and Mn) and deposited to a thickness of approximately $2.7\;{\AA}$ on r-$Al_2O_3$(1102) substrates by pulsed laser deposition. The r-$Al_2O_3$(1102) substrates with atomic steps and terrace surface were obtained by thermal annealing. Samples of $Ti_{0.94}Fe_{0.06}O_2$(TiFeO), $Ti_{0.94}Mn_{0.06}O_2$(TiMnO), and $Ti_{0.94}(Fe_{0.03}Mn_{0.03})O_2$ show a low remanent magnetization and coercive field, as well as superparamagnetic features at room temperature. On the other hand, superlattice films (TiFeO/TiMnO) show a high remanent magnetization and coercive field. An anomalous Hall effect in superlattice films exhibits hysisteresis loops with coercivities corresponding to those in the ferromagnetic Hysteresis loops. The superlattice films composed of alternating layers of $Ti_{0.94}Fe_{0.06}O_2$ and $Ti_{0.94}Mn_{0.06}O_2$ exhibit intrinsic ferromagnetic properties for dilute magnetic semiconductor applications.

• Journal of the Korean Magnetics Society
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• v.4 no.4
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• pp.340-346
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• 1994

Change in the electrical resistance of artificial superlattice under two magnetic fields-the main and the secondary magnetic field-has been studied with respect to each magnetic field strength in (200) textured Co/Cu artificial superlattice. When the two magnetic fields were applied in the same direction, lateral shift of the magnetoresistance curve occurred, while splitting phenomenon of the maximum resistance appeared when the two magnetic fields were applied at the right angle. When the angle between the two magnetic fields became $45^{\circ}$ shifting as well as splitting occurred in the magnetoresistance curve. This magnetoresistance behavior with double magnetic fields in the artificial superlattices could be explained with the macroscopic spin alignment model newly suggested in this work.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.704-709
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• 1994

The $(LaS)_xCrS_2(x \approx 1.20$) of the incommensurate misfit layer was systhesized from reactant mixture of$La_S_3$,Cr and S at 1273K. Powder X-ray diffration of $(LaS)_xCrS_2(x \approx 1.20$) was indexed as a complex structure consisted with a monoclinic LaS-sublattice, a triclinic $CrS_{2}$-sublattice and their superlattice. The temperature dependence of sublattice dimension was investigated by the X-ray diffraction analysis at low temperature. The magnetic susceptibility of $(LaS)_xCrS_2(x \approx 1.20$) was measured between 77K and room temperature using a Faraday balance method. $(LaS)_xCrS_2(x \approx 1.20$) was paramagnetic on a $\sigma$-H plot at room temperature. The observed effective magnetic moment( p dr) was in fair agreement with the value calculated by spin-only contribution for $Cr^{3+}$ and spin and orbital contribution for $La^{3+}$.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.