• Title/Summary/Keyword: spin polarization

Search Result 144, Processing Time 0.042 seconds

Chirality in Non-Hermitian Photonics

  • Yu, Sunkyu;Piao, Xianji;Park, Namkyoo
    • Current Optics and Photonics
    • /
    • v.3 no.4
    • /
    • pp.275-284
    • /
    • 2019
  • Chirality is ubiquitous in physics and biology from microscopic to macroscopic phenomena, such as fermionic interactions and DNA duplication. In photonics, chirality has traditionally represented differentiated optical responses for right and left circular polarizations. This definition of optical chirality in the polarization domain includes handedness-dependent phase velocities or optical absorption inside chiral media, which enable polarimetry for measuring the material concentration and circular dichroism spectroscopy for sensing biological or chemical enantiomers. Recently, the emerging field of non-Hermitian photonics, which explores exotic phenomena in gain or loss media, has provided a new viewpoint on chirality in photonics that is not restricted to the traditional polarization domain but is extended to other physical quantities such as the orbital angular momentum, propagation direction, and system parameter space. Here, we introduce recent milestones in chiral light-matter interactions in non-Hermitian photonics and show an enhanced degree of design freedom in photonic devices for spin and orbital angular momenta, directionality, and asymmetric modal conversion.

Single Crystalline CoFe/MgO Tunnel Contact on Nondegenerate Ge with a Proper Resistance-Area Product for Efficient Spin Injection and Detection

  • Jeon, Kun-Rok;Min, Byoung-Chul;Lee, Hun-Sung;Shin, Il-Jae;Park, Chang-Yup;Shin, Sung-Chul
    • Proceedings of the Korean Magnestics Society Conference
    • /
    • 2010.06a
    • /
    • pp.96-96
    • /
    • 2010
  • We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the crystalline CoFe(5 nm)/MgO(1.5,2.0,2.5 nm)/n-Ge(001) tunnel contacts have been investigated by I-V-T and C-V measurements. Interestingly, the tunnel contact with the 2-nm MgO exhibits the ohmic behavior with low resistance-area products, satisfying the theoretical conditions required for significant spin injection and detection. This result is ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.

  • PDF

Electrical properties of the PLZT thin film capacitors by the sol-gel method (Sol-gel법을 이용한 PLZT박막 커패시터의 전기적 특성)

  • 박준열;정장호;이성갑;이영희
    • Electrical & Electronic Materials
    • /
    • v.9 no.7
    • /
    • pp.668-673
    • /
    • 1996
  • In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.

  • PDF

Magnetic Properties of Carbon Chains Doped with 4d Transition Metals

  • Jang, Y.R.;Lee, J.I.
    • Journal of Magnetics
    • /
    • v.13 no.1
    • /
    • pp.7-10
    • /
    • 2008
  • The structural and magnetic properties of functionalized carbon chains doped with 4d transition metals, such as Ru, Rh, and Pd, were investigated using the full-potential linearized augmented plane wave (FLAPW) method. The carbon nanowire doped with Ru exhibited a ferromagnetic ground state with a sizable magnetic moment, while those doped with Rh and Pd had nonmagnetic ground states. For the Ru-doped chain, the density of states at the Fermi level showed large spin polarization, which suggests that the doped nanowire could be used for spintronic applications.

QUENCHING OF TUNNELING MAGNETORESISTANCE IN MAGNETIC TUNNEL JUNCTIONS

  • Lee, K. I.;Lee, W. Y.;K. H. Shin;Lee, J. H.;K. Rhie;Lee, B. C.
    • Proceedings of the Korean Magnestics Society Conference
    • /
    • 2002.12a
    • /
    • pp.152-153
    • /
    • 2002
  • The report on large tunneling magnetoresistance (TMR) at room temperature in magnetic tunnel junctions (MTJ), composed of two ferromagnetic electrodes separated by a thin insulating barrier, has ignite the intensive research both from scientific and technological points of view. A simple model proposed by Juliere has explained the observed TMR surprisingly well, where the TMR is expressed in terms of the spin polarization P of the ferromagnetic electrodes. (omitted)

  • PDF

Microstructure and Ferroelectric Properties of Randomly Oriented Polysrystalline $(Bi,Nd)_4Ti_3O_{12}$ Thin Films Prepared by Sol-Gel Method (졸-겔법으로 증착된 $(Bi,Nd)_4Ti_3O_{12}$ 박막의 미세구조와 강유전성에 대한 연구)

  • Kang, Dong-Kyun;Kim, Byong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.296-296
    • /
    • 2007
  • Ferroelectric neodymium-substituted $Bi_4Ti_3O_{12}$(BTO) thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process and the effect of crystallization temperature on their microstructure and ferroelectric properties were studied systematically. $Bi(TMHD)_3$, $Nd(TMHD)_3$, $Ti(O^iPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from 600 to $720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The crystallinity of the BNT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The polarization values of the films were a monotonous function of the crystallization temperature. The remanent polarization value of the BNT thin films annealed at $720^{\circ}C$ was $24.82\;{\mu}C/cm^2$ at an applied voltage of 5 V.

  • PDF

Hydrogen Production by the High Temperature Steam Electrolysis of NiO/YSZ/Pt Cell (NiO/YSZ/Pt 전해셀의 고온 수증기 전해에 의한 수소제조 특성)

  • Yu, Ji-Haeng;Kim, Young-Woon;Lee, Shi-Woo;Seo, Doo-Won;Hong, Ki-Suk;Han, In-Sub;Woo, Sang-Kuk
    • Transactions of the Korean hydrogen and new energy society
    • /
    • v.17 no.1
    • /
    • pp.62-68
    • /
    • 2006
  • High temperature electrolysis is a promising technology to produce massively hydrogen using renewable and nuclear energy. Solid oxide fuel cell materials are candidates as the components of steam electrolysers. However, the polarization characteristics of the typical electrode materials during the electrolysis have not been intensively investigated. In this study, NiO electrode was deposited on YSZ electrolyte by spin coat process and firing at $1300^{\circ}C$. Pt electrode was applied on the other side of the electrolyte to compare the polarization characteristics with those by NiO during electrolysis. The $H_2$ evolution rate was also monitored by measuring the electromotive force of Lambda probe and calculated by thermodynamic consideration. At low current density, Pt showed lower cathodic polarization and thus higher current efficiency than Ni, but the oxidation of Ni into NiO caused the increase of anodic resistance with increasing current density. High overpotential induced high power consumption to produce hydrogen by electrolysis.