• Title/Summary/Keyword: spin factor

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A Novel Calibration Method Research of the Scale Factor for the All-optical Atomic Spin Inertial Measurement Device

  • Zou, Sheng;Zhang, Hong;Chen, Xi-yuan;Chen, Yao;Fang, Jian-cheng
    • Journal of the Optical Society of Korea
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    • v.19 no.4
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    • pp.415-420
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    • 2015
  • A novel method to measure the scale factor for the all-optical atomic spin inertial measurement device (ASIMD) is demonstrated in this paper. The method can realize the calibration of the scale factor by a self-consistent method with small errors in the quiescent state. At first, the matured IMU (inertial measurement unit) device was fixed on an optical platform together with the ASIMD, and it has been used to calibrate the scale factor for the ASIMD. The results show that there were some errors causing the inaccuracy of the experiment. By the comparative analysis of theory and experiment, the ASIMD was unable to keep pace with the IMU. Considering the characteristics of the ASIMD, the mismatch between the driven frequency of the optical platform and the bandwidth of the ASIMD was the major reason. An all-optical atomic spin magnetometer was set up at first. The sensitivity of the magnetometer is ultra-high, and it can be used to detect the magnetization of spin-polarized noble gas. The gyromagnetic ratio of the noble gas is a physical constant, and it has already been measured accurately. So a novel calibration method for scale factor based on the gyromagnetic ratio has been presented. The relevant theoretical analysis and experiments have been implemented. The results showed that the scale factor of the device was $7.272V/^{\circ}/s$ by multi-group experiments with the maximum error value 0.49%.

ESR and its Application to Magnetic Research (전자스핀공명을 이용한 자성체연구 소개)

  • Choi, Kwang-Yong
    • Journal of the Korean Magnetics Society
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    • v.20 no.3
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    • pp.120-128
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    • 2010
  • Electron spin resonance (ESR) is one of an experimental choice for studying magnetic materials that have one or more unpaired electrons. ESR spectroscopy finds its wide applications in branches of science encompassing physics, chemistry, biology, medicine and quantum computation. In this brief review we introduce a basic principle of ESR and describe how to extract information on g-factor, spin and orbital states from the ESR spectral parameters. Finally, several examples are discussed with an intention to have a practical feeling of what ESR can do in magnetism.

Gate-Controlled Spin-Orbit Interaction Parameter in a GaSb Two-Dimensional Hole gas Structure

  • Park, Youn Ho;Koo, Hyun Cheol;Shin, Sang-Hoon;Song, Jin Dong;Kim, Hyung-Jun;Chang, Joonyeon;Han, Suk Hee;Choi, Heon-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.382-383
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    • 2013
  • Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.

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Verification of Deployment Algorithms in Wireless Mobile Sensor Networks using SPIN (SPIN을 이용한 무선 이동 센서 네트워크의 배치 알고리즘 검증)

  • Oh Dong-Jin;Park Jae-Hyun
    • The KIPS Transactions:PartD
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    • v.13D no.3 s.106
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    • pp.391-398
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    • 2006
  • This paper verifies deployment algorithms in wireless sensor networks using SPIN, a widely used model checking tool. In this paper, two deployment algorithms, DSSA(Distributed Self Spreading Algorithm) and TBDA(Tree Based Deployment Algorithm), are verified to check their stability against oscillation as well as energy consumption that is an important factor in wireless sensor networks.

The Analysis of Device Models and the Method of Increasing Compatibility Between Device Models for M&S V&V of NetSPIN (NetSPIN M&S 모델 V&V를 위한 장비 모델 및 모델간 호환성 증진방안 분석)

  • Park, In-Hye;Kang, Seok-Joong;Lee, Hyung-Keun;Shim, Sang-Heun
    • Journal of Information Technology Services
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    • v.11 no.sup
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    • pp.51-60
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    • 2012
  • In this paper, we provide the analysis of device model and method between device models for compatible M&S V&V of the NetSPIN. First of all, we analysis features, structure, and classification of the NetSPIN. The second, as a part of reliable V&V process, we analysis network system modeling process, correlation between device modeling process for M&S of the NetSPIN. The third, we suggest making a kind of pool of reference model and module of devices for the increase factor of reuse between device model. We also, at the point view of M&S V&V, conclude that there is the validity of the fidelity in device modeling process. Through the analysis of the NetSPIN device model and suggestion of the method for higher compatibility between device modes, the development process of device model be clearly understood. Also we present the effective method of the development for reliable device mode as the point of V&V.

The Technology Licensing Office as Factor of Success for Spin-off: Case Study of a Research Lab Startup of Korea

  • Ham, Hyeong-Uk;Ko, Chang-Ryong
    • Asian Journal of Innovation and Policy
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    • v.5 no.2
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    • pp.129-145
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    • 2016
  • This is a case study to analyze the role of technology licensing or transfer office (TLO) as factors of success for the spin-off from government research lab. The case company is a research lab startup, which is a joint venture through technology investment by a government research lab or university in the designated R&D parks and cash investment by the partner company. The case company listed on the stock market in 2015 reaching a market capitalization of US$ 1.2 billion. We confirm the success factors of startups pointed out in many studies: original technology, good understanding of core technology and production technology, technological competitiveness in the market. However, there is an important factor not well discussed in the previous studies, the role of TLO. TLO guided the company ownership, management, technology, and solved problems that pause business itself. The case became the sample of research lab startup and technology investment in Korea.

Quantum computing using applied electric field to quantum dots

  • Meighan, A.;Rostami, A.;Abbasian, K.
    • Advances in nano research
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    • v.2 no.1
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    • pp.15-22
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    • 2014
  • In recent years, spins of confined carriers in quantum dots are promising candidates for the logical units in quantum computers. In many concepts developed so far, the individual spin q-bits are being manipulated by magnetic fields, which is difficult to achieve. In the current research the recent developments of spin based quantum computing has been reviewed. Then, Single-hole spin in a molecular quantum dots with less energy and more speed has been electrically manipulated and the results have been compared with the magnetic manipulating of the spin.

Switching behavior in Peramlloy/Niobium/Permalloy trilayer

  • Hwang, Tae-Jong;Kim, Dong Ho
    • Progress in Superconductivity and Cryogenics
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    • v.16 no.4
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    • pp.17-20
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    • 2014
  • We have investigated the effect of temperature and bias current on the stability of the inverse spin-switch effect in Permalloy(Py)/Nb/Permalloy pseudo spin-valves. The inverse spin-switch operates between two orientations of the ferromagnetic moments of Py layers; parallel (ON) and antiparallel-domain (OFF) state. Measuring time scans of the resistance changes between the ON and OFF state, ${\Delta}R_{ON-OFF}$, while alternating magnetic fields between the two states at various temperatures and bias currents, revealed that enhancement of ${\Delta}R_{ON-OFF}$ is a key factor to achieve successful operation of superconducting spin switch.