• 한국표면공학회지
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• 제46권3호
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• pp.116-119
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• 2013

To improve the corrosion resistance of an electrogalvanized steel sheet, we deposited magnesium film on it using a vacuum evaporation method and annealed the films at $250-330^{\circ}C$. The zinc-magnesium alloy is consequently formed by diffusion of magnesium into the zinc coating. From the anodic polarization test in 3% NaCl solution, the films annealed at $270-310^{\circ}C$ showed better corrosion resistance than others. In X-ray diffraction analysis, $ZnMg_2$ was detected through out the temperature range, whereas $Mg_2Zn_{11}$ and $FeZn_{13}$ were detected only in the film annealed at $310^{\circ}C$. The depth composition profile showed that the compositions of Mg at $270-290^{\circ}C$ are evenly and deeply distributed in the film surface layer. These results demonstrate that $270-290^{\circ}C$ is a proper temperature range to produce a layer of $MgZn_2$ intermetallic compound to act as a homogeneous passive layer.

• Korean Chemical Engineering Research
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• 제51권2호
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• pp.292-295
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• 2013

불규칙한 나노선의 모임인 금 나노망이 간단한 수용액 합성법을 통하여 합성되었다. 직경이 10~15 nm 크기의 금나노망은 APTMS (3-aminopropyltrimethoxysilane) 처리를 통하여 기판과의 접착력을 크게 향상시킬 수 있었다. 코팅횟수의 조절을 통하여 기판 위 금 나노망의 밀도 조절이 가능하였으며, 균일하게 코팅된 나노망은 물리적 및 전기적으로 서로 연결된 구조를 보였다. 유연성 PI(polyimide) 기판에 증착된 금 나노망은 구부리기 전, 후 및 구부렸다 편 상태에서 동일한 전기 전도성을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.186-186
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• 2012

This report investigates a new synthetic route and the size-dependent optical and electrical properties of PbS nanocrystal quantum dots (NQDs) in diameters ranging between 1.5 and 6 nm. Particularly we synthesize ultra-small sized PbS NQDs having extreme quantum confinement with 1.5~2.9 nm in diameter (2.58~1.5 eV in first exciton energy) for the first time by adjusting growth temperature and growth time. In this region, the Stokes shift increases as decreasing size, which is testimony to the highly quantum confinement effect of ultra-small sized PbS NQDs. To find out the electrical properties, we fabricate self-assembled films of PbS NQDs using layer by layer (LBL) spin-coating method and replacing the original ligands with oleic acid to short ligands with 1, 2-ethandithiol (EDT) in the course. The use of capping ligands (EDT) allows us to achieve effective electrical transport in the arrays of solution processed PbS NQDs. These high-quality films apply to Schottky solar cell made in an glass/ITO/PbS/LiF/Al structure and thin-film transistor varying the PbS NQDs diameter 1.5~6 nm. We achieve the highest open-circuit voltage (＜0.6 V) in Schottky solar cell ever using PbS NQDs with first exciton energy 2.58 eV.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.396-396
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• 2012

$TiO_2$ anatase nanotube arrays (NTAs) were grown by electrochemical anodization and followed annealing of Ti foil. Ethylene glycol/$NH_4F$-based organic electrolyte was used for electrolyte solution and using second anodization process to obtain free-standing NTAs. After obtaining NTAs, ITO film was deposited by sputtering process on bottom of NTAs. UV-curable NOA was used for attach free-standing NTAs on flexible plastic substrate (PEN). Solid state electrolyte (spiro-OMeTAD) was coated via spin-coating method on top of attached NTAs. Ag was deposited as a counter electrode. Under AM 1.5 simulated sunlight, optical characteristics of devices were investigated. In order to use flexible polymer substrate, processes have to be conducted at low temperature. In case of $TiO_2$ nano particles (NPs), however, crystallization of NPs at high temperature above $450^{\circ}C$ is required. Because NTAs were conducted high temperature annealing process before NTAs transfer to PEN, it is favorable for using PEN as flexible substrate. Fabricated flexible solid-state DSSCs make possible the preventing of liquid electrolyte corrosion and leakage, various application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.460-461
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• 2009

We studied the effects of post-annealing treatment on poly(3-hexylthiophene)(P3HT, donor):[6,6]-phenyl $C_{61}$ butyric acid methyl ester(PCBM, acceptor) blend film as an active layer in the organic solar cells(OSCs). For the formation of the active layer, 3 wt.% P3HT:PCBM solution in chlorobenzene were deposited by spin-coating method. In order to optimize the performance of OSCs, the P3HT crystallization and the redistribution of PCBM cluster at P3HT:PCBM composition as a function of post-annealing condition from room temperature to $200^{\circ}C$ were measured by the Hall effect and the UV-vis Spectrophotometer. We thought that the improved efficiency in the OSCs with post-annealing treatment at $150^{\circ}C$ can be explained by the efficient separation or collection of the photogenerated excitons at donor-acceptor interface by P3HT crystallization.

• 한국표면공학회지
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• 제33권2호
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• pp.93-100
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• 2000

Effects of Ti content and Ti underlayer on the pitting behavior of TiN coated AISI 304 stainless steel have been studied. The stainless steel containing 0.1~1.0wt% Ti were melted with a vacuum melting furnace and heat treated at $1050^{\circ}C$ for 1hr for solutionization. The specimen were coated with l$\mu\textrm{m}$ and 2$\mu\textrm{m}$ thickness of Ti and TiN by E-beam PVD method. The microstructure and phase analysis were conducted by using XRD, XPS and SEM with these specimen. XRD patterns shows that in TiN single-layer only the TiN (111) Peak is major and the other peaks are very weak, but in Ti/TiN double-layer TiN (220) and TiN (200) peaks are developed. It is observed that the surface of coating is covered with titanium oxide (TiO$_2$) and titanium oxynitride ($TiO_2$N) as well as TiN. Corrosion potential on the anodic polarization curve measured in HCl solution increase in proportion to the Ti content of substrate and by a presence of the Ti underlayer, whereas corrosion and passivation current densities are not affected by either of them. The number and size of pits decrease with increasing Ti content and a presence of the coated Ti film as underlayer in the TiN coated stainless steel.

• 전자공학회논문지SC
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• 제45권6호
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• pp.60-66
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• 2008

리튬 전지(Li/SOCl2)는 오랜기간 방치후 부하를 인가하였을 때 순간적으로 전압이 하강하여 정상적인 작동전압을 회복하는데 까지 일정 시간이 경과해야만 하는 단점이 있는데, 이를 리튬전지의 초기전압지연이라 한다. 리튬 전지에서 필연적으로 발생하는 초기전압지연으로 인해 장비를 즉시 사용할 수 없는 단점이 있으므로, 초기전압지연 시간을 단축하는 것은 Li/SOCl2 시스템에서 극복해야 할 근본적인 과제이다. 본 논문에서는 전해액에 첨가제를 투입하거나, 리튬 음극에 PVC를 도포하는 등의 직접적인 방법으로 리튬 표면에 염화리튬 성장을 억제하는 것이 아니라, 양극의 성형밀도를 조절하여 양극 내에서 이온의 이동을 원활하게 유도함으로써, 용액저항을 감소시켜. 초기전압지연을 개선한 연구결과를 수행하였고, 특히 용액의 저항이 증가하는 저온에서 리튬전지의 초기전압지연 감소방안을 실험적 연구를 통해 개선하였다.

• 한국결정성장학회지
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• 제14권5호
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• pp.187-192
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• 2004

We try to use isopropanol which has low boiling point to prepare ZnO thin films at low temperature. ZnO thin films were prepared by sol-gel spin-coating method using zinc acetate dehydrate-isopropanol-monoethanolamine (MEA) solution. The c-axis preferred orientation and optical properties of ZnO films with preheating temperature have been investigated. ZnO thin films were preheated at 200 to $300^{\circ}C$ with an interval of $25^{\circ}C$ and post-heated at $650^{\circ}C$. The ZnO film preheated at $275^{\circ}C$ and post-heated at $650^{\circ}C$ was highly oriented along c-axis (002) plane, and the surface with homogeneous and dense microstructures was formed having nano-sized grains. The optical transmittance was above 90 % in the visible range and exhibited absorption edges at 368 nm wavelength.

• 한국표면공학회지
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• 제43권6호
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• pp.266-271
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• 2010

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${\gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $\delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${\gamma}-Mo_2N$ and $\delta$-MoN surrounded by amorphous $Cu_3N$ phase.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.616-621
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• 2009

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.