• 한국세라믹학회지
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• 제44권6호
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• pp.325-330
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• 2007

High porous AlO(OH) gel is used in precursor of ceramic material, coating material and porous catalyst. For use of these, not only physiochemical control for particle morphology, pore characteristic and peptization but also studies of synthetic method for preparation of high porous AlO(OH) gel were required. In this study, high porous AlO(OH) gel was prepared through the aging and filtration process of aluminum hydroxides gel precipitated by the hydrolysis reaction of $Na_2CO_3$ solution and $Al_2(SO_4)_3$ and $Na_2SO_4$ mixed solution. In this process, optimum synthetic condition of AlO(OH) gel having excellent pore volume as studying the effect of hydrolysis pH on gel precipitates has been studied. Hydrolysis pH brought about numerous changes on crystal morphology, surface area, pore volume and pore size. Physiochemical properties of gel were investigated as using XRD, TEM, TG/DTA, FT-IR and $N_2$ BET method.

• 멤브레인
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• 제32권3호
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• pp.198-208
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• 2022

멤브레인은 분리 기술 및 다양한 사용처에 따라서 유기물, 액체, 용질, 증기, 기체, 이온 또는 전자 등 다양한 물질을 선택적으로 분리할 수 있다. 멤브레인은 크게 대칭막과 비대칭막으로 나누며, 기공의 유무에 따라 다공성과 비다공성으로 분류된다. 또한 멤브레인의 계면은 분자적으로 균일하거나, 또는 화학적으로 또는 물리적으로 불균일할 수 있다. 제조기술로는 용융 압출 제조법, 연신법, 템플레이트 침출법, 트랙-에치법, 용액 캐스팅법, 상전이법 및 용액 코팅법 등이 있다. 제조된 멤브레인은 정밀여과, 한외여과, 나노여과, 역삼투, 기체분리 및 에너지 분야와 같은 다양한 응용 분야에 적용될 수 있다. 본 총설에서는 멤브레인의 분류 및 종류에 따른 제조 방법에 대한 튜토리얼을 제공한다.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• 공업화학
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• 제7권6호
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• pp.1078-1086
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• 1996

본 연구에서는 W-IPA(peroxo-polytungstic acid)를 출발 물질로 하는 졸 용액을 ITO(indium tin oxide)가 입혀진 유리판 위에 침적 도포(dip-coating) 방법으로 침적시키고, 이것을 겔화시킨 후에 열처리하여 전기 발색 소자 (electrochromic device, ECD)의 텅스텐 산화물 박막 전극을 만들어 이의 전기화학적인 특성을 고찰하였다. 가장 좋은 전기 화학적 특성을 나타내는 조건은 $2g/10mL(W-IPA/H_2O)$졸 용액에 15회 침적 도포하여 $230{\sim}240^{\circ}C$의 온도로 최종 열처리 한 텅스텐 산화물 박막 전극이었으며, 침적 횟수의 증가에 따라 산화 텅스텐 박막의 두께는 비례하여 증가하였고, 5회 침적 도포 이후에는 1회 침적 도포시 약 $60{\AA}$ 두께로 막이 생성됨을 알 수 있었다. 졸-겔법으로 제조된 텅스텐 산화물 박막 전극은 X-선 회절 분석에 의하여 비정질 구조, 주사 전자 현미경에 의하여 박막 표면은 균일한 것으로 조사되었다. 다중 순환 전류-전위 주사법에 의하여 작성된 전류-전위 곡선에 의하면 순환 횟수가 수백회 이상임에도 불구하고 소 발색은 뚜렷하게 나타났으나, 더욱 많은 순환 횟수에서는 전해질인 황산 수용액 중에서 텅스텐 산화물 박막의 박리 현상이 일어나 소 발색의 전류 밀도는 차츰 감소하였다. 전위 주사 속도를 변화시키면서 순환 전류-전위 주사법에 의하여 작성된 전류-전위 곡선으로부터 구한 전기화학적 특성 값을 이용하여 반응에 참여하는 수소 이온의 확산 계수를 구할 수 있었다.

• 대한기계학회논문집A
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• 제26권11호
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• pp.2409-2414
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• 2002

The surfaces of prototypes become rough due to the stair-stepping which is the inevitable phenomenon in the Rapid Prototypes are not used only for the verification of feature. The grinding, coating, or the composition of them is a main operation in post-processing in which lots of costs and long build time are needed. The solution is proposed to increase the efficiency of rapid prototyping by minimizing or removing the composition of them is a main operation in post-processing in which lots of costs and long build time are needed. the solution is proposed to increase the efficiency of rapid prototyping by minimizing or removing the regions for post-processing. the factors to cause the surface roughness and their effects are analyzed through the experiments. Software modules are developed to predict the surface roughness of each face in the prototyping with the result. An experimental compensation method is developed to apply the modules to various RP equipments, materials and build styles. The build direction is searched with use of genetic algorithm to maximize the total areas of the surface of which roughness is better than the user-defined value.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1030-1035
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• 2001

Strontium barium niobate, (Sr$\sub$0.5/Ba$\sub$0.5/Nb$_2$O$\sub$6/), thin films of various composition were prepared by the sol-gel method. Solution derived from acetate powders and niobium ethoxide in a mixture of acetic acid, ethylene glycol and 2-methoxyehanol was spin-coated onto bare silicon, Pt-coated silicon and fused silica substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability against precipitation and to decrease the crystallization temperature of the films as confirmed by XRD and FT-IR analyses.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.834-836
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• 2008

We demonstrated micro-scale conducting polymer patterning based on a selective surface treatment. A substrate with a patterned photoresist was immersed into OTS (Octadecyltrichlosilnae) solution. The protected substrate areas were hydrophilic after removing the PR resist, where a conducting polymer solution was coated selectively by spin-coating method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1499-1502
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• 2005

Dense $BaMgAl_{10}O_{17}:Eu^{2+}$ phosphor particles with a spherical shape have been synthesized through spray pyrolysis method using basic aluminum nitrate precursor as a spray solution. This $BaMgAl_{10}O_{17}:Eu^{2+}$ particles prepared by the spray pyrolysis have shown the stronger emission intensity compared to the commercially-available $BaMgAl_{10}O_{17}:Eu^{2+}$. However, thermal stability of the BAM:Eu b lue phosphor is very poor due to changing from $Eu^{2+}$ to $Eu^{3+}$ at the thermal process, so brightness of the phosphor decreases. To improve the thermal stability of the dense BAM:Eu phosphor, the spherical BAM:Eu particles were coated with pure $BaMgAl_{10}O_{17}$ layer using the hydrolysis reaction in a solution system. The synthesized powders were characterized by XRD, SEM and PL. On the other hand, the emission properties of the BAM:Eu phosphors coated with $BaMgAl_{10}O_{17}$ layer before and after thermal treatment at $500^{\circ}C$ for 30 min were estimated under VUV excitation. The brightness of the coated phosphor was higher than that of the uncoated phosphor. Also, the coating thickness of BAM layer in the BAM:Eu particles was optimized.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.248-249
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• 2005

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.