• 제목/요약/키워드: soluble pentacene

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유기 트랜지스터 제작을 위한 Soluble Pentacene 박막의 특성연구 (A Study of Soluble Pentacene Films for Organic Transistors)

  • 임현승;공수철;신익섭;장호정
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2007년도 춘계학술발표논문집
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    • pp.136-138
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    • 2007
  • 본 연구에서는 유기박막트랜지스터 (OTFT, Organic Thin film Transistor) 제작을 위한 채널막으로 pentacene의 soluble 공정 과 soluble 공정 올 통하여 제작된 pentacene 박막의 특성 을 분석 하여 유기박막트랜지스터에 적용 여부를 조사하였다. Pentacene을 용해시키기 위한 용제로는 toluene과 chloroform을 사용하였으며, 각각의 용제에 대하여 열처리를 하여 pentacene 용액을 준비하였다. Spin-coating 법으로 pentacene 유기 박막을 제작하여 각 박막의 결정화 특성을 관찰하였다. XRD 회절 분석 결과 chloroform 올 이용한 pentacene 박막에서만 결정화가 된 것이 확인이 되었다. Hall effect measurement 분석 결과 chloroform올 이 용한, pentacene 박막의 전하농도 (Carrier Concentration)는 $-3.225{\times}1014(c{\cdot}cm^{-3})$를 나타내었고, 이동도 (Mobility)는 $3.5{\times}10^{-l}(cm^2{\cdot}V^{-1}{\cdot}S^{-1})$를 각각 나타내었다.

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Organic Thin Film Transistor Fabricated with Soluble Pentacene Active Channel Layer and NiOx Electrodes

  • Han, Jin-Woo;Kim, Young-Hwan;Kim, Byoung-Yong;Han, Jeong-Min;Moon, Hyun-Chan;Park, Kwang-Bum;Seo, Dae-Shik
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.395-395
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    • 2007
  • We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (SID) electrodes, gate dielectric, and gate electrode, respectively. The $NiO_x$ SID electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacenechannel by sputter deposited of NiO powder and show a moderately low but still effective transmittance of ~65% in the visible range along with a good sheet resistance of ${\sim}40{\Omega}/{\square}$. The maximum saturation current of our soluble pentacene-based TFT is about $15{\mu}A$ at a gate bias of -40showing a high field effect mobility of $0.06cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^4$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.

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유기박막트랜지스터 적용을 위한 Soluble Pentacene 박막의 특성연구 (A Study of Soluble Pentacene Thin Film for Organic Thin Film Transistor)

  • 공수철;임현승;신익섭;박형호;전형탁;장영철;장호정
    • 마이크로전자및패키징학회지
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    • 제14권3호
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    • pp.1-6
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    • 2007
  • 본 연구에서는 유기박막트랜지스터(OTFT, Organic Thin film Transistor)에 응용을 위해 용액(soluble) 공정을 통하여 제작된 pentacene 박막의 특성을 분석하여 pentacene 박막의 OTFT 소자에 적용 가능성을 조사하였다. Pentacene을 용해시키기 위해 toluene과 chloroform의 두 종류의 용제를 사용하였으며, 이들 용제가 pentacene 박막의 특성에 미치는 영향을 연구하였다. Pentacene 용액은 ITO/Glass 기판위에 spin-coating 법으로 유기 반도체 박막을 제작하여 각 박막의 표면형상, 결정화 특성과 전기적 특성을 조사하였다. AFM을 이용한 표면 형상 관찰 결과 chloroform을 이용한 pentacene 박막이 toluene을 이용한 박막에 비하여 표면 거칠기가 개선되는 경향을 보여주었다. XRD 회절 분석 결과 모든 pentacene 박막 시료에서 결정화가 되지 않은 비정질 형태를 보여주었다. Hall effect measurement 분석 결과 chloroform 용제를 이용한 pentacene 박막이 toluene용제를 사용한 시료에 비해 보다 우수한 전기적 특성을 나타내었다. 즉, chloroform에 용해된 pentacene 박막의 경우 전하농도와 이동도는 $-3.225{\times}10^{14}\;cm^{-3}$$3.5{\times}10^{-1}\;cm^2\;V^{-1}{\cdot}S^{-1}$를 각각 나타내었다. 또한 비저항은 약 $2.5{\times}10^2\;{\Omega}{\cdot}cm$를 얻었다.

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Synthesis and Properties of 6,13-Bis(4-propylphenyl)pentacene

  • Choi, E-Joon;Kim, Heung-Gyu;Park, Jae-Hoon;Kim, Jae-Hoon
    • Journal of Information Display
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    • 제10권3호
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    • pp.121-124
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    • 2009
  • In this study, 6,13-Bis(4-propylphenyl)pentacene was synthesized and characterized. The structures of the products that were obtained during the reaction steps were identified via FT-IR and NMR spectroscopy and elemental analysis. The compound was found to be soluble in organic solvents like chloroform, dichloromethane, THF, and toluene. The charge transport mobility was $10^{-4}cm^2V^{-1}s^{-1}$, and the on/off current ratio was $10^2$, while the compound was 2.5 times more stable under oxidation in a solution compared with pentacene.

용액형 유기반도체를 이용한 고성능 포토트랜지스터 (High Performance Organic Phototransistors Based on Soluble Pentacene)

  • 김영훈;이용욱;한정인;한상면;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.79-80
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    • 2007
  • A high performance organic phototransistor with dynamic range of 120 dB is demonstrated by employing soluble pentacene as a photo-sensing layer. The organic phototransistor used suspended source/drain (SSD) electrode structure, which provides a dark current level of ${\sim}10^{-14}$ A at positive gate bias. Under a steady-state illumination, the organic phototransistor exhibited a current modulation of $10^6$ compared to dark to give a dynamic range of 120 dB. These results suggest that the organic phototransistor based on TIPS pentacene can be a new premising candidate for low-cost and high-performance photo-sensing element for digital imaging applications.

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수용성 포토레지스트와 이를 이용한 유기 박막의 photolithography 공정 연구 (Photolithography process investment of water soluble photoresist and Organic thin film by using it.)

  • 김광현;김건주;류기성;김태호;송정근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.497-500
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    • 2004
  • In this paper, we developed a new photolithography process which used a water-soluble photoresist instead of organic solvent soluble photoresist, defined pentacene thin film. And pentacene OTFTs were fabricated with the water- soluble photolithography process.

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Triisopropylsilyl pentacene organic thin-film transistors by ink-jet printing method

  • Park, Young-Hwan;Kang, Jung-Won;Kim, Yong-Hoon;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1135-1138
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    • 2006
  • By ink-jet printing method, organic thin-film transistors (OTFTs) having soluble 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) as an active material were fabricated. The TIPS pentacene solution was made with chlorobenzene and anisole. The solutions were printed on poly (4-vinylphenol) (PVP) dielectric layers and source/drain electrodes by piezo-type heads for bottom contact OTFTs. The dielectric layers had untreated or HMDS-treated conditions. The chlorobenzene device showed the highest field effect mobility of $0.016\;cm^2/Vs$ and the anisole HMDS-treated device shows the highest $I_{on}/I_{off}$ ratio of $10^5$.

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Low-Temperature Processable Polyimide Gate Insulator and Hybridization Approach for High Performance Pentacene Thin Film Transistor

  • Ahn, Taek;Kim, Jin-Woo;Yi, Mi-Hye
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.871-874
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    • 2007
  • We have synthesized a novel fully soluble and low-temperature processable polyimide gate insulator (KSPI) through one-step condensation polymerization. For the preparation of KSPI, 5- (2,5-dioxytetrahydrofuryl)-3-methly-3-cyclohexene- 1,2-dicarboxylic anhydride (DOCDA) and 4,4- diaminodiphenylmethane (MDA) were used as monomers and fully imidized KSPI was completely soluble in organic solvents like ${\gamma}-butyrolactone$ and 2-butoxyethanol, etc.

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Pentacene Thin-Film Transistors with Polyimide/$SiO_2$ Dual Gate Dielectric

  • Imahara, Hirokazu;Kim, Woo-Yeol;Oana, Yasuhisa;Majima, Yutaka
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.972-973
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    • 2007
  • Relationships between field effect mobility and grain size on pentacene thin-film transistors with $polyimide/SiO_2$ gate dielectrics have been studied. 6 kinds of polyimide were used as surface treatment gate dielectric layer. Grain size of the pentacene thin film were between 5 and $30\;{\mu}m$ and depended on the polyimide. The field effect mobility were also depended on the polyimide and the those values were from 0.027 to $0.69\;cm^2/(Vs)$. The field effect mobility tends to increase with increasing the grain size. Precursor type polyimide containing polyamic acid show better mobility of $0.69\;cm^2/(Vs)$ than soluble type polyimide. Bias stress characteristics in air are discussed in the basis of the grain size.

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