한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.871-874
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- 2007
Low-Temperature Processable Polyimide Gate Insulator and Hybridization Approach for High Performance Pentacene Thin Film Transistor
- Ahn, Taek (Information and Electronics Polymer Research Center Korea Research Institute of Chemical Technology) ;
- Kim, Jin-Woo (Information and Electronics Polymer Research Center Korea Research Institute of Chemical Technology) ;
- Yi, Mi-Hye (Information and Electronics Polymer Research Center Korea Research Institute of Chemical Technology)
- Published : 2007.08.27
Abstract
We have synthesized a novel fully soluble and low-temperature processable polyimide gate insulator (KSPI) through one-step condensation polymerization. For the preparation of KSPI, 5- (2,5-dioxytetrahydrofuryl)-3-methly-3-cyclohexene- 1,2-dicarboxylic anhydride (DOCDA) and 4,4- diaminodiphenylmethane (MDA) were used as monomers and fully imidized KSPI was completely soluble in organic solvents like