• 한국지반공학회논문집
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• 제31권9호
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• pp.29-38
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• 2015

이 연구에서는 열차가 교량 접속부를 통과하면서 발생되는 동적상호작용 문제를 유한요소해석프로그램을 이용하여 검토하였다. 해석대상구간에서의 궤도틀림조건은 부등침하량을 삼각함수를 이용하여 이상화하고, 철도공사 선로 보수기준을 만족하는 최대 궤도틀림 한계치를 해석조건으로 설정하였다. 해석대상이 되는 접속부 구조물의 체결장치 아래 부분은 모두 3차원 입체요소로 모형화하였으며, 해석비용을 줄이기 위하여 1/2 궤도부분만을 모형화하였다. 경계조건은 평면변형률상태에 준하는 것으로 차량-궤도 동적상호작용해석을 수행하였다. 국내 콘크리트궤도용 표준 접속부에서의 궤도틀림에 따른 열차 주행시 동적상호작용해석을 수행하여 윤중감소율과 차체수직진동가속도를 살펴보았으며, 접속부의 시멘트 안정처리골재, 일반골재, 일반토사구간에서의 발생된 최대 Mises응력으로 동적거동을 평가하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.24-24
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• 2003

Research activity in the III-V nitrides materials system has increased markedly in the past several years ever since high-brightness blue light-emitting diodes (LEDs) became commercially available. Despite of excellent optical properties of the GaN, however, inherently poor thermal property of the sapphire used as a substrate material n these devices may lead to thermal degradation of devices, especially during their high power operation. Therefore, dependable thermal analysis and packaging schemes of GaN-based LEDs are necessary for solid lighting applications under high power operation. In this paper, emphasis will be placed upon thermal design of GaN-based LEDs. Thermal measurements of LEDs on chip and packaging scale were performed using the liquid crystal thermographic technology and micro thermocouples for different bias conditions. By a series of optical arrangement, hot spots with specific transition temperatures were obtained with increasing input power. Thermal design of LEDS was made using the finite element method and analytical unit temperature profile approach with optimal boundary conditions. The experimental results were compared to the simulated data and the results agree well enough for the establishment of dependable prediction of thermal behavior in these devices. The paper will present a more detailed understanding of the thermal analysis of the GaN-based blue and white LEDs for high power applications.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.562-566
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• 2001

The effects of MnO$_2$ addition on the properties in Pb(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ relaxor ferroelectrics were studied in the phase transition temperature range from -4$0^{\circ}C$ to 11$0^{\circ}C$. Specimens were made via solid state processing method. Dielectric properties, piezoelctric properties, electric-field-induced strain were examined to clarify the effect of MnO$_2$ addition in 0.9MN-0.1PT. As the amount of MnO$_2$ increases, the maximum dielectric constant and the dielectric loss decreases. Q$_{m}$ increased by increasing the doping contents of Mn. When 0.5wt% MnO$_2$ was doped, Q$_{m}$ increased from 95 to 480. The electric-filed-induced strain and polarization decreases as the amount of MnO$_2$ increases. From the experimental results, it was suggested that Mn behaves as an ferroelectric domain pinning element.ent.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• 한국전산유체공학회지
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• 제21권2호
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• pp.112-119
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• 2016

NEXTSat-1 is the next-generation small-size artificial satellite system planed by the Satellite Technology Research Center(SatTReC) in Korea Advanced Institute of Science and Technology(KAIST). For the control of attitude and transition of the orbit, the system has adopted a RHM(Resisto-jet Head Module), which has a very simple geometry with a reasonable efficiency. An axisymmetric model is devised with two coil-resistance heaters using xenon(Xe) gas, and the minimum required specific impulse is 60 seconds under the thrust more than 30 milli-Newton. To design the module, seven basic parameters should be decided: the nozzle shape, the power distribution of heater, the pressure drop of filter, the diameter of nozzle throat, the slant length and the angle of nozzle, and the size of reservoir, etc. After quasi one-dimensional analysis, a theoretical value of specific impulse is calculated, and the optima of parameters are found out from the baseline with a series of multi-physical numerical simulations based on the compressible Navier-Stokes equations for gas and the heat conduction energy equation for solid. A commercial code, COMSOL Multiphysics is used for the computation with a FEM (finite element method) based numerical scheme. The final values of design parameters indicate 5.8% better performance than those of baseline design after the verification with all the tuned parameters. The present method should be effective to reduce the time cost of trial and error in the development of RHM, the thruster of NEXTSat-1.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 1996년도 춘계학술대회논문집; 부산수산대학교, 10 May 1996
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• pp.263-270
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• 1996

본 연구에서는 여러개의 원판형 압전소자가 부착된 판구조물의 소음제어를 다루었다. 판재의 아래에는 소음원이 위치하고 이 소음원은 판재를 가진한다. 구조물 및 압전소자는 3차원 요소, 구조물 요소 및 천이요소의 조화로 이루어지는 유한요소로 모델링 되었다. 최적화 과정의 목적함수는 구조물로부터 복사되는 소음 에너지이고 설계변수는 원판형 압전소자의 위치, 크기 및 인가되는 전압이 사용되었다. 최적설계과정에서 요구되는 자동격자형성이 언급되었다. 구조물의 공진 및 비공진 주파수에서 최적설계가 행해졌으며 괄목할 만한 소음감소를 얻었다. 이 결고는 음향 하중의 형태가 다르게 변하더라도 크게 변하지 않는 것이 밝혀졌다. 또한 한 주파수 뿐 아니라 넓은 주파수 영역에서도 압전가진기의 전압을 조정함으로써 좋은감소를 얻을 수 있다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.33.1-33.1
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• 2011

Strontium doped lanthanum manganite (LSM) with perovskite structure for SOFC cathode material shows high electrical conductivity and good chemical stability, whereas the electrical conductivity at intermediate temperature below $800^{\circ}C$ is not sufficient due to low oxygen ion conductivity. The approach to improve electrical conductivity is to make more oxygen vacancies by substituting alkaline earths (such as Ca, Sr and Ba) for La and/or a transition metal (such as Fe, Co and Cu) for Mn. Among various cathode materials, $LaSrMnCuO_3$ has recently been suggested as the potential cathode materials for solid oxide fuel cells (SOFCs). As for the Cu doping at the B-site, it has been reported that the valence change of Mn ions is occurred by substituting Cu ions and it leads to formation of oxygen vacancies. The electrical conductivity is also affected by doping element at the A-site and the co-doping effect between A-site and B-site should be described. In this study, the $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3{\pm}{\delta}}$ ($0{\leq}x{\leq}0.4$) systems were synthesized by a combined EDTA-citrate complexing process. The crystal structure, morphology, thermal expansion and electrical conductivity with different Sr contents were studied and their co-doping effects were also investigated.

• 한국자기학회지
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• 제4권3호
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• pp.226-232
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• 1994

철-희토류 화합물인 Sm-Fe 이원계에서 조성식 $SmFe_{7+x}M_{x}(M=Mo,\;V,\;Ti)$ 화합물을 급속냉각기술로 제조하여 강자성을 나타내는 새로운 자성상인 ${Sm(Fe,\;M)}_{7}$을 합성하였다. Sm-Fe 이원계에 제 2의 천이원소 Mo, V 또는 Ti를 첨가함으로써, ${Sm(Fe,\;M)}_{7}$ 자성상은 큐리온도(Tc)가 $T_{c}=355^{\circ}C$에 달했으며 x=0.8과 1.0 사이에서 $SmFe_{7+x}M_{x}(M=Mo,\;V,\;Ti)$의 고유보자력 ($_{i}H_{c}$)이 3~6 kOe를 갖는 신 자성상을 제조하였다. ${Sm(Fe,\;M)}_{7}$ 상은 급냉응고 된 상태에서나 열처리 후에도 변함없이 안정하였으며 오히려 급냉상태에서 보다 우수한 강자기 특성을 보였다. ${Sm(Fe,\;M)}_{7}$은 육방정계 결정구조를 갖는 능방정계이며 P6/mmm Space Group에 속하는 것으로 판명되었다. ${Sm(Fe,\;M)}_{7}$ 자성상이 고보자력을 나타내는 원천적인 이유는 급속냉각에 의하여 결정입도가 $2000~8000\;{\AA}$의 미립자로 형성되기 때문이며, 높은 규리온도를 보이는 까닭은 급속냉각에 의해 제 2의 천이원소인 Mo, V 또는 Ti의 Fe에 대한 고용도가 평형상태에서 보다 월등히 높아져 자기변환온도를 상승하게 하였기 때문이다.