• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.49.1-49.1
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.151.1-151
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• 1998

• 한국전기화학회:학술대회논문집
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• 2005.07a
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• pp.141-144
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• 2005

• Journal of Energy Engineering
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• v.3 no.1
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• pp.10-17
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• 1994

• Bulletin of the Korean Chemical Society
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• v.21 no.2
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• pp.241-244
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• 2000

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Polymer(Korea)
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• v.34 no.4
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• pp.357-362
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• 2010

Poly(ethyleneglycol diacrylate)(PEGDA) or 2-ethylhexyl acrylate(2EHA)-based gel polymer electrolytes(GPEs) which have a solid content in the range of 8～54 wt% were synthesized and their ionic conductivity and electrochemical properties were measured at room temperature. It was observed that the ionic conductivity over $1\times10^{-3}$ S/cm was obtained in a homogeneous PEGDA-based GPE with 21 wt% of solid content. However the electrochemical stability of the GPE was lower than that of a liquid electrolyte. The presence of AIBN initiator which can produce a N2 gas during polymerization process might be the reason of this low oxidation decomposition potential. As an alternative, benzoyl peroxide was used as an initiator and GPE with enhanced electrochemical stability was obtained. Finally, the formation of stable solid electrolyte interphase on a graphite anode was evidenced by cyclic voltammetry measurement.

• Journal of the Korean Electrochemical Society
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• v.25 no.4
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• pp.191-200
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• 2022

Na-β"-Al₂O₃ has been widely employed as a solid electrolyte for high-temperature sodium (Na) beta-alumina batteries (NBBs) thanks to its superb thermal stability and high ionic conductivity. Recently, a vapor phase conversion (VPC) method has been newly introduced to fabricate thin Na-β"-Al₂O₃ electrolytes by converting α-Al₂O₃ into β"-Al₂O₃ in α-Al₂O₃/yttria-stabilized zirconia (YSZ) composites under Na⁺ and O^2- dual percolation environments. One of the main challenges that need to be figured out is lowered conductivity due to the large volume fraction of the non-Na⁺-conducting YSZ. In this study, the effect of lithia addition in the β"-Al₂O₃ phase on the grain size and ionic conductivity of Na-β"-Al₂O₃/YSZ solid electrolytes have been investigated in order to enhance the conductivity of the electrolyte. The amount of pre-added lithia (Li₂O) precursor as a phase stabilizer was varied at 0, 1, 2, 3, and 4 mol% against that of Al₂O₃. It turns out that ionic conductivity increases even with 1 mol% lithia addition and reaches 67 mS cm^-1 at 350 ℃ of its maximum with 3 mol%, which is two times higher than that of the undoped composite.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.276-276
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• 2006

The incorporation of room temperature ionic liquids (IL) in poly (ethyleneoxide)-lithium salt (PEO-LiX) based solid polymer electrolytes is presently being studied as an effective means of enhancing the room temperature ionic conductivity of these electrolytes to acceptable levels for use in lithium batteries. In the present study, $PEO_{20}-LiTFSI$ solid polymer electrolyte was blended with three different ionic liquids, namely 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide (BMIMTFSI), 1-butyl-3-methylimidazolium tetraflouroborate (BMIMBF4) and 1-butyl-3-methylimidazolium trifluromethanesulfonate ($BMIMCF_{3}SO_{3}$). The incorporation of all these ILs resulted in the enhancement of ionic conductivity, the effect being more pronounced at lower temperatures. Electrochemical properties of the blended electrolytes were studied by cyclic voltammetry, linear sweep voltammetry and interfacial resistance measurements. The optimum results were obtained with the blending of BMIMTFSI in the solid polymer electrolyte.