• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1388-1390
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• 1995

The characteristic of dielectric breakdown in solid insulating material dominates the reliability and safety of power equipment and affects directly to its life. In this point of view, the thickness and temperature dependence of dielectric breakdown strength and mechanism of dielectric breakdown in low density polyethylene which has been employed widely as insulating material have been technically reviewed by examinations of thermal property. The dielectric breakdown strength depending on its thickness was measured 2.6[MV/cm] at the thickness of 20[${\mu}m$] and 1.9[MV/cm] at the thickness of 75[${\mu}m$] based on ambient temperature of 30[$^{\circ}C$]. It is shown the temperature dependence that dielectric breakdown strength decreases in linear as the thickness increases. The dielectric breakdown strength depending on temperature was measured 2.6[MV/cm] at the temperature of 30[$^{\circ}C$], 1.6[MV/cm] at 60[$^{\circ}C$] and 1.3[MV/cm] at 90[$^{\circ}C$] based on the thickness of 20[${\mu}m$]. As the ambient temperature increases, the temperature dependence is shown that a very large drop is occurred up to temperature of 60[$^{\circ}C$] and a very small drop is discovered over 60[$^{\circ}C$].

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1459-1461
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• 1997

The microwave dielectric ceramic properties of $CaTiO_3-(Li_{1/2}Nd_{1/2})TiO_3$ were investigated. The solid solution of $CaTiO_3-(Li_{1/2}Nd_{1/2})TiO_3$ had the perovskite structure in the range of all composition. The dielectric constant and temperature coefficient of resonant frequency of solid solution were decreased with the contend of $(Li_{1/2}Nd_{1/2})TiO_3$, whereas, the $Q{\times}f$ value was increased. In the $(1-X)CaTiO_3-X(Li_{1/2}Nd_{1/2})TiO_3$ system, the microwave properties could be controlled by the variation of X, X is weight fraction. Typical value of K=119, $Q{\times}f=2970$ and $TCF=14ppm/^{\circ}C$ were obtained for $0.2CaTiO_3-0.8(Li_{1/2}Nd_{1/2})TiO_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.294-296
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• 1999

Solid solution ceramics having various ratios between xPb( $Y_{1}$2/T $a_{1}$2/) $O_3$ and Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$were synthesized by a conventional solid state reaction for well sintered specimens, dielectric and piezoelectric prperties were studied as a function of composition. The dielectric constant of PYT-PZT ceramics of 4 mol% PYT was 1,424 at room temperature. The maximum value of electromechanical couping facotr $k_{p}$ of 51% $k_{t}$ of 30% were obtained at the composition of 4 mol% PYT, howerver mechanical quality factor( $Q_{m}$) had a minimum value of 69 at 4 mol% PYT. Also the maximum value of piezoelectric constant of $D_{33}$(310[pC/N]) and $d_{31}$(-131[pC/N]) were obtained at the composition of 4 mol% PYT content.ntent.t.t.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.288-289
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• 2006

We studied the effect of sol-gel processing and sintering temperature on the microwave properties of $MgCo_2(VO_4)_2$ system(MCV) which is applicable to LTCC(low-temperature cofired ceramics). The MCV was synthesized by sol-gel process using solution that contains precursor molecules for Mg, Co, and V. SEM analysis shows that the average particle size is ${\sim}1{\mu}m$ and size distribution is very uniform compared to the one prepared by conventional solid-state reaction process. Highly dense samples were obtained at the sintering temperature range of $750^{\circ}C{\sim}930^{\circ}C$. The maximum $Q{\times}f_0$ value of 55,700GHz, dielectric constant(${\varepsilon}_r$) of 10.41 and temperature coefficient(${\tau}_f$) of $-85ppm/^{\circ}C$ was obtained at the sintering temperature of $930^{\circ}C$. The superior microwave properties of sol-gel processed MCV relative to conventional solid-state reaction processed one is remarkable especially at lower sintering temperatures such as $750^{\circ}C$ and $800^{\circ}C$.

• Current Applied Physics
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• v.18 no.12
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• pp.1546-1552
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• 2018

The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.438-445
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• 2002

In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.523-531
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• 1988

The dielectric and piezoelectric properties with compositions in Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3-(PNN-PT-PZ)solid solution ceramics were investigated. In this study, the compsition ranges were 30 PNN 45mole%, 20 PT 50mole% and 50 PZ5mole%. As PT fraction were increased the grain size was increased and the fired density was decreased, but the changes of PNN fraction had no effect on the grain size. The Curie temperature was increased when PT and PNN fraction were increased. The displacement was increased but had a great hysteresis loss when PT fraction was increased. In morphotropic phase boundary, the maximum piezoelectric and electromechanical coupling factor were indicated. Morphotropic phase boundary(MPB) was 34 PT 36mole% in chang of compositions.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.329-337
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• 1991

The Ni-MgO composites were prepared by coprecipitation of NiO-MgO solid solutions and their selective reduction in a hydrogen atmosphere. We report on the measurements of both ac conductivity $\sigma$ ($\omega$, f) and dielectric constant $textsc{k}$'($\omega$, f) for the Ni-MgO composites in the frequency range from 10 Hz to 10 MHz at room temperature. The frequency exponents of conductivity and dielectric constant, x and y, are found to be x=0.98$\pm$0.05 and y=0.05$\pm$0.01. These results are in good agreement with a general scaling relation $\chi$-y=1, although these values are different from the theoretical predications. The dielectric constant exponent ($textsc{k}$' f-fc -s) is found to be s=0.62$\pm$0.07 with estimated percolation threshold fc=0.20$\pm$0.02.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.56-56
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• 2008

ZnO Oxide TFT with organic dielectric was prepared. ZnO thin film as active channel was prepared by plasma enhanced atomic deposition technique. Organic dielectric was spin coated on the gate metal. The structure of prepared TFT is bottom gate type and top contact structure. The characterization of oxide TFT was performed. We obtained the mobility of $0.7cm^2$/Vs, the threshold voltage of -14V, and the on-off ratio of $10^4$. We also obtained good output characterization with solid saturation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.6
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• pp.821-826
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• 2012

The streaming electrification process of vegetable insulating oils occurring when the oils contacted with solid material in a high power transformer circulation system seems to cause electrical discharge incidents and may cause failures. We therefore measured the dielectric breakdown voltage tendency of vegetable insulating oils flowing on the surface of the charging device with various velocity and temperature. First, the relation between the velocity and breakdown voltage tendency of vegetable oils, can be explained by volume effect and v-t effect. Second, experimental results show that applied voltage have little effect on dielectric breakdown voltage, when vegetable insulating oils used for large power transformer.