• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.1-9
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• 2002

The metallurgical reaction properties between the pad consisted of 0.5 $\mu\textrm{m}$Au/5 $\mu\textrm{m}$Ni/Cu layers on a conventional ball grid array (BGA) substrate and In-15 (wt.%)Pb-5Ag solder ball were characterized during the reflow process and solid aging. During the reflow process of 1 to 5 minutes, it was observed that thin $AuIn_2$ or Ni-In intermetallic layer was formed at the interface of solder/pad. The dissolution rate of the Au layer into the molten solder was about $2\times 10^{-3}$ $\mu\textrm{m}$/sec which is remarkably low in comparison with a eutectic Sn-37Pb solder. After solid aging treatment for 500 hrs at $130^{\circ}C$, the thickness of $Ni_{28}In_{72}$ intermetallic layer was increased to about 3 $\mu\textrm{m}$ in all the conditions nevertheless the initial reflow time was different. These result show that In atoms in the solder alloy were diffused through the $AuIn_2$ phase to react with underlaying Ni layer during solid aging treatment. From the microstructural observation and shear tests, the reaction properties between In-15Pb-5Ag alloy and Au/Ni surface finish were analyzed not to trigger Au-embrittlement in the solder joints unlike Sn-37Pb composition.

• Journal of Welding and Joining
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• v.16 no.6
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• pp.77-85
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• 1998

Effects of non-cleaning and cleaning fluxes on the wetting properties and defects at flow soldered joints were investigated. Non-cleaning flux (R-type of 3.3% solid content) and cleaning flux (RMA-type of 15% solid content) were used. Wetting test was accomplished by wetting balance method with changing surface state of wetting specimen, CU. Sn-37%Pb solder was used for wetting test and flow soldering. As experimental results, the wetting time for vertical force from the surface tension being zero was mainly affected by surface state of the wetting specimen. Non-cleaning flux had a good wettability compared with cleaning flux. In case of non-cleaning flux, conveyor speed had a great affection to defects of bridge, icicle, and poor solder.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2010.05a
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• pp.572-573
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• 2010

Vibration analysis of Fine-pitch Ball Grid Array (FBGA) packages mounted on a Printed Circuit Board (PCB) subjected to harmonic excitation is performed by using finite element method (FEM). A finite element model of a memory module is composed of three main parts, packages, simplified solder balls and bare PCB. At first, natural frequencies and mode shapes of the developed model were confirmed experimentally. Secondly, the harmonic excitation experiment for the module was carried out at the first natural frequency of the memory module, and it was verified with the simulation by using mode superposition method at a constant acceleration.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.195-202
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• 2003

In this study, failure mechanisms of Au stud bumps/ACF flip chip joints were investigated underhigh current stressing condition. For the determination of allowable currents, I-V tests were performed on flip chip joints, and applied currents were measured as high as almost 4.2Amps $(4.42\times10^4\;Amp/cm^2)$. Degradation of flip chip joints was observed by in-situ monitoring of Au stud bumps-Al pads contact resistance. All failures, defined at infinite resistance, occurred at upward electron flow (from PCB pads to chip pads) applied bumps (UEB). However, failure did not occur at downward electron flow applied bumps (DEB). Only several $m\Omega$ contact resistance increased because of Au-Al intermetallic compound (IMC) growth. This polarity effect of Au stud bumps was different from that of solder bumps, and the mechanism was investigated by the calculation of chemical and electrical atomic flux. According to SEM and EDS results, major IMC phase was $Au_5Al_2$, and crack propagated along the interface between Au stud bump and IMC resulting in electrical failures at UEB. Therefore. failure mechanisms at Au stud bump/ACF flip chip Joint undo high current density condition are: 1) crack propagation, accompanied with Au-Al IMC growth. reduces contact area resulting in contact resistance increase; and 2) the polarity effect, depending on the direction of electrons. induces and accelerates the interfacial failure at UEBs.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.1
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• pp.55-62
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• 2023

In this study, Sn-3.0Ag-0.5Cu (wt.%, SAC305) solder dipping process was performed between Ni-foam skeleton with different pore per inch (PPI) to fabricate Ni-foam/SAC305 composite solder, and then applied to the transient liquid phase (TLP) bonding process to evaluate the microstructure and mechanical properties of the bonded joint. The Ni-foam/SAC305 composite solder preform consisted of Ni-foam and SAC305, and an intermetallic compound (IMC) having a (Ni,Cu)₃Sn₄ composition was formed at the Ni-foam interface. During TLP bonding process, the IMC at the Ni-foam interface was converted to (Ni,Cu)₃Sn₄+Au, and as the bonding time increased, the Ni-foam and SAC305 continuously reacted, and the bonded joint was converted into an IMC. And it was confirmed that the 130 PPI Ni-foam/SAC305 composite solder joint was converted into an IMC at the fastest rate. As a result of performing a shear test to confirm the effect of Ni-foam on mechanical properties, solder joints under all conditions exhibited excellent mechanical properties of 50 MPa or more in the early stages of the TLP bonding process, and the shear strength tends to increase as the bonding time increases.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.43-50
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• 2009

Although thin PCBs(Printed Circuit Boards) have recently been required for high density interconnection, high electrical performance, and low manufacturing cost, the utilization of thin PCBs is severely limited by warpage and reliability issues. Warpage of the thin PCB leads to failure in solder-joints and chip. The $B^2it$(Buried Bump Interconnection Technology) for PCB has been developed to achieve a competitive manufacturing price. In this study, chip temperature, package warpage, chip stress and solder-joints stress characteristics of the PCB prepared with $B^2it$ process have been calculated using thermo-mechanical coupled analysis by the FEM(Finite Element Method). FEM computation was carried out with the variations in bump shapes and kinds of materials under 1.5W power of chip and constant convection heat transfer. The results show that chip temperature distribution reached more quickly steady-state status with PCB prepared with $B^2it$ process than PCB prepared with conventional via interconnection structure. Although $B^2it$ structures are effective on low package warpage and chip stress, with high strength bump materials arc disadvantage for low stress of solder-joints. Therefore, it is recommended that optimized bump shapes and materials in PCB design should be considered in terms of reliability characteristics in the packaging level.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.165-180
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• 2004

Phosphor contents are critical to the interfacial reaction and IMC behavior. - If content is too low, the dissolution rate will be very fast. - If content is too much, the cracks during interfacial reaction and the IMCs spalling will easily occur. The spalling of IMCs caused the brittle fracture of solder joint under shear test. IMCs from chemical reaction influences to the mechanical properties and life time. Composition changes from chemical reaction influence to the life time.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.147-163
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• 2003

European Union bans the usage of Pb in electronics from July 1 st, 2006. The Near-eutectic Sn-Ag-Cu alloys are the leading candidate Pb-free solders (for SMT card assembly). .The microstructure of Sn-Ag-Cu alloys is discussed in terms of solidification, composition and cooling rate. Methods of controlling Ag3Sn plates are discussed. .Thermo-mechanical fatigue behaviors of Sn-Ag-Cu solder joints are reviewed. Tin pest, whisker growth, electromigration of Pb-free solders are discussed.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.47-53
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• 2015

The effects of electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the in-situ intermetallics reaction and the electromigration (EM) reliability of Sn-3.0Ag-0.5Cu (SAC305) solder bump were systematically investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of the ENIG surface finish at solder top side, while at the OSP surface finish at solder bottom side,$ Cu_6Sn_5$ and $Cu_3Sn$ IMCs were formed. Mean time to failure on SAC305 solder bump at $130^{\circ}C$ with a current density of $5.0{\times}10^3A/cm^2$ was 78.7 hrs. EM open failure was observed at bottom OSP surface finish by fast consumption of Cu atoms when electrons flow from bottom Cu substrate to solder. In-situ scanning electron microscope analysis showed that IMC growth rate of ENIG surface finish was much lower than that of the OSP surface finish. Therefore, EM reliability of ENIG surface finish was higher than that of OSP surface finish due to its superior barrier stability to IMC reaction.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.45-50
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• 2017

We investigated effect of Zn content on shear strengh of Sn-0.7Cu-xZn and OSP surface finished solder joints. Five pastes of Sn-0.7Cu-xZn (x=0, 0.5, 1.0, 1.5, 2.0 wt.%) solders were fabricated by mixing of solder powder and flux using planatary mixer. $180{\mu}m$ diameter solder balls were formed on OSP surface finished Cu electrodes by screen print method, and the reflow process was performed. The shear strength was evaluated with two high shear speeds; 0.01 and 0.1 m/s. The thickness of the intermetallic compound(IMC) layer was decreased with increasing Zn content in Sn-0.7Cu-xZn solder. The highest shear strength was 3.47 N at the Zn content of 0.5 wt.%. As a whole, the shear strength at condition of 0.1 m/s was higher than that of 0.01 m/s because of impact stress. Fracture energies were calculated by F-x (Force-displacement) curve during high speed shear test and the tendency of fracture energy and that of shear strength were good agreement each other. Fracture took place within solder matrix at lower Zn content, and fracture occured near the interface of OSP surface finished Cu electrode and solder at higher Zn content.