• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.140-144
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• 2000

($Pb_{0.91}$$La_{0.09}$)($Zr_{0.65}$$Ti_{0.35}$)$O_3$ thin films were prepared on ITO-coated glass by spin-coating. As $Pb_{0.9}$$La_{0.1}$)$TiO_3$ thin films were used as seeding layers, formation temperature of perovskite was reduced and theUrosette" structure was disappeared. PLZT thin films with a seeding layer of 40 nm thick showed a (100) preferred orientation and better dielectric and ferroelectric properties.ties.

• Journal of Powder Materials
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• v.4 no.1
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• pp.9-17
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• 1997

The mullite-zirconia composites were prepared by the pressureless sintering with addition of 10~20 vol% ZrO$_2$(TZ3Y) in the fused mullite and sol-gel mullite matrix. The densification rate of sol-gel mullite was higher than that of fused mullite, and the addition of ZrO$_2$(TZ3Y) was effective on the densification of fused mullite. The enhancement of densification and anisotropic growth of mullite in ZrO$_2$added specimen can be explained by the solid solution effect of $Zr^{+4}$ ion in mullite. Both mechanical strength and fracture toughness of mullite-zirconia composite were enhanced compared to those of mullite. The enhancement of mechanical properties is attributed to the hinderance of grain growth and the combined toughening effects of tetra-mono phase transformation and crack deflection due to the residual stress between mullite/ZrO$_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.493-497
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• 1999

$TiO_2$ Powders were prepared by sol-gel method to testify the characteristics as the photocatalysts. The relationship between processing conditions (R-value (molar ratio of water to alkoxide)), heat treatment temperature, microstructures (crystalline phases), and properties (surface area, particle size) was examined. The optimal conditionsto improve the activity of photocatalyst for photobleaching of dyes in aqueous solution, Were determined.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.103-111
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• 1998

Au fine particle dispersed TiO2 film was prepared on silica glass substrate by sol-gel dip and firing process. The films were fabricated from the system of titanium tetraisoproxie-EtOh-HCl_H2O-hydrogen tetrachloroaurate(III) tetrahydrate. The conditions for the formation of the clear solution and dissolving high concentration of Au compound were examined. And a photoreduction process was adopted to control the size of gold metal particles. Phase evolution of matrix TiO2 and variation of Au particle with UV irradiation were investigated by XRDA, SEM, TEM and UV-visible spectrophotometer. And the effect of CPCl(Cetylpyridinium chloride monohydrate) as a dispersion agent was evaluated.

• Resources Recycling
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• v.18 no.6
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• pp.30-37
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• 2009

Silica sol was prepared from the mixture of sodium silicate solution and oxidized silicate solution in which sodium had been removed by sol-gel process. The properties of sodium silicate solution and silicate solution thus prepared were characterized by yellow silicomolydate method. Moreover, the formation and growth of silica sol from sodium silicate solution was investigated. Sodium silicate solution with 2% of $SiO_2$ contains 95% of reactive silicate, and 50% of reactive silicate participates sol-gel reaction. From the results of FT-IR analysis, it was found that the intensity of silanol bond decreased and the intensity of siloxane bond increased with increasing reaction temperature. Zeta potential of silica sol prepared at each condition was -40~-60 mV and it could be known that silica sol in this study was well dispersed. The silica sol with 5~10 nm size could be prepared by heating the mixed solution of sodium silicate and silicate solution. And the silica sol grew into about 20 nm as silicate solution was added to silica sol solution.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.13-19
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• 1997

From the formation of the monodispersed silica particle which is a valuable for the industry by Sol-Gel process, the effects of the parameters participated in the process, the growth mechanism and the characteristics of silica particles for each rection conditions are investigated. To investigate about the formation of final silica particles, the suspension which performs the polymerization is reacted with molybdic acid, and the evolutions of TEOS and silica particle size are investigated in the reaction time ？ 새 the characteristics of molybdic acid with the suspension. From the results, a constant number of silica particle is formed at early reaction stage. Silica particles grow through the aggregation of smaller particles and nucleation is rate-limiting step for the growth of particles. In the conditions of this study, spherical silica particles are formed, [NH$_3$] and [$H_2O$] concentration increase the particle size but particle size decrease with [$H_2O$] concentration which is a certain above region. Average particle sizes are 187.4~483.3 nm and standard deviations in the average particle size are 1.7~2.9% with each experimental condition. From the BET results, specific surface area is 5.5~23.4 $m^2$/g and these values decrease with increase size. The average pore size is 50~70$\AA$.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.153-153
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• 2006

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.59-65
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• 2006

Al-doped and F-doped ZnO (ZnO : Al & ZnO : F) thin films were coated onto glass substrate by sol-gel method. These films showed c-axis orientation in common, but different I(002)/[I(002) + I(101)] and FWHM (full width at half-maximum). In particular, the grain size of the ZnO : Al films decreased with the increase in the Al-doping concentration, while for the ZnO : F films the grain siae increased up to F 3 at% and then decreased. For the electrical properties, Hall effect measurement was used. The resistivity of the ZnO : Al films and the ZnO : F films were, respectively, $2.9{\times}10^{-2}{\Omega}cm$ at Al 1 at% and $3.3{\times}10^{-1}{\Omega}cm$ at F 3 at%. Moreover compared with ZnO:Al films, ZnO:F films have lower carrier concentration (ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) and higher mobility (ZnO : Al $45cm^2/Vs$, ZnO : F $495cm^2/Vs$). For average optical transmittances, ZnO : Al thin films have $86{\sim}90%$ and ZnO : F films have $77{\sim}85%$ comparatively low.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.158-163
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• 2011

$CuInS_2$ thin films were prepared using a sol-gel spin-coating method. That makes large scale substrate coating, simple equipment, easy composition control available. The structural and optical properties of $CuInS_2$ thin films that include less toxic materials (S) instead of Se, tetragonal chalcopyrite structure. Copper acetate monohydrate ($Cu(CH_3COO)_2{\cdot}H2O$) and indium acetate ($In(CH_3COO)_3$) were dissolved into 2-propanol and l-propanol, respectively. The two solutions were mixed into a starting solution. The solution was dropped onto glass substrate, rotated at 3000 rpm, and dried at $300^{\circ}C$ for Cu-In as-grown films. The as-grown films were sulfurized inside a graphite container box and chalcopyrite phase of $CuInS_2$ was observed. To determine the optical properties measured optical transmittance of visible light region (380~770 nm) were less than 30 % in the overall. The XRD pattern shows that main peak was observed at Cu/In ratio 1.0 and its orientation was (112). As annealing temperature increases, the intensity of (112) plane increases. The unit cell constant are a = 5.5032 and c = 11.1064 $\AA$, and this was well matched with JCPDS card. The optical transmittance of visible region was below than 30 %.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.277-281
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• 2009

Superhydrophobic $SiO_2$ thin films were successfully fabricated on a glass substrate by sol-gel method. To fabricate $SiO_2$ thin film with a high roughness, $SiO_2$ nano particles were added into tetraethoxysilane (TEOS) solution. The prepared $SiO_2$ thin film without an addition of $SiO_2$ nano particles showed a very flat surface with ca. 1.27 nm of root mean square (RMS) roughness. Otherwise, the $SiO_2$ thin films fabricated by using coating solutions added $SiO_2$ nano particles of 1.0, 2.0 and 3.0 wt% showed a RMS roughness of ca. 44.10 nm, ca. 69.58 nm, ca. 80.66 nm, respectively. To modify the surfaces of $SiO_2$ thin films to hydrophobic surface, a hydrophobic treatment was carried out using a fluoroalkyltrimethoxysilane (FAS). The $SiO_2$ thin films with a high rough surface were changed from hydrophilic to hydrophobic surface after the FAS treatment. Especially, the prepared $SiO_2$ thin film with a RMS roughness of 80.66 nm showed a water contact angle of $163^{\circ}$.