• ETRI Journal
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• 제34권5호
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• pp.779-782
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• 2012

$CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

• Tribology and Lubricants
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• 제10권3호
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• pp.62-70
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• 1994

An analytical model of the stress field caused by sliding indentation of brittle materials is developed. The complete stress field is treated as the superposition of applied normal and tangential forces with a sliding blister approximation of the localized inelastic deformation occuring just underneath the indenter. It is shown that lateral cracking is produced by the sliding blister stress field and that median cracking is caused by the applied contact forces. The model is combined with an experimental volume change measurements to show that the relative magnitude of tensile stresses governing lateral crack and median crack growth varies with the magnitude of the applied load. This prediction is consistent with the different regimes of experimentally observed cracking in soda-lime glass.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.5-9
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• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1150-1151
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• 2008

Titanium-doped indium oxide (ITiO) films were prepared on soda-lime glass substrate using a magnetic null discharge (MND) sputter source. The ITiO thin films containing 10 wt.% Ti showed the minimum resistivity of ${\rho}=5.5{\times}10^{-3}{\Omega}cm$. The optical transmittance increases from 70% at 450 nm to 80% at 700 nm in visible spectrum. The surface roughness of the sample showed a change from 10 nm to 50 nm. The ITiO film used for TCO layer of DSCs exhibited an energy conversion efficiency of about 3.8 % at light intensity of 100 $mW/cm^2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.258-258
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• 2010

ZnO TCO 박막은 후반사막과 전면전극의 물질으로써, 태양전지의 효율을 증가시킬수 있는 중요한 역할을 하고 있다. 특히 Boron 을 도핑한 BZO 박막은 가시광대 영역에서 높은 투명도를 보여준다. Soda Lime glass 위에 MOCVD를 이용하여 증착한 BZO 박막에 대해서, 플라즈마 처리에 의한 광학적 변화를 알아 보았다. 산소 또는 수소 분위기에서 플라즈마 처리를 하였고, 그에 따른 공정 조건 중 RF 전력, 압력, 시간을 제어했다. 이에 따라 ZnO 박막의 광학적 특성의 분석을 통해서 플라즈마 처리에 따른 흡수도와 밴드갭의 변화를 볼 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.655-657
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• 2002

The carbon nanotube emitters for field emission displays were fabricated by screen printing techniques. The pastes for screen printing are composed of organic binders, carbon nanotubes, and some additive materials. Then the pastes were printed on Cr-coated/Ag-printed soda-lime glass substrates. From the I-V characteristics, the turn-on field of SWNT was lower than that of MWNT. The decrease in the mesh size of screen masks resulted in decreasing the turn-on field and increasing the electron emission current. When the carbon nanotubes were mixed with glass frit, glass frit appeared to contribute to the vertically aligning of carbon nanotubes on glass.

• 대한기계학회논문집A
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• 제26권1호
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• pp.153-159
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• 2002

Brittle materials such as ceramics and glasses show fragile fracture due to the low toughness and the crack sensitivity. When brittle materials are subjected to impact loading by small spheres, high contact pressure occurs to the surface of the specimen. Local damage is subsequently generated in the specimen. This local damage is a dangerous factor which gives rise to the final fracture of structures. In this research, impact damage of soda-lime glass plates by small spheres was evaluated by considering the effects of impact directions of indenter, pressure condition of specimen and residual strength after impact loading.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.203-203
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• 2012

The SWCNTs network are formed on various plastic substrates such as poly(ethylene terephthalate) (PET), polyimide (PI) and soda lime glass using roll-to-roll printing and spray process. Selective patterning of carbon nanotubes film on transparent substrates was performed using a femtosecond laser. This process has many advantages because it is performed without chemicals and is easily applied to large-area patterning. It could also control the transparency and conductivity of CNT film by selective removal of CNTs. Furthermore, selective cutting of carbon nanotube using a femtosecond laser does not cause any phase change in the CNTs, as usually shown in focused ion beam irradiation of the CNTs. The patterned SWCNT films on transparent substrate can be used electrode layer for touch panels of flexible or flat panel display instead indium tin oxide (ITO) film.

• 한국표면공학회지
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• 제32권2호
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• pp.125-133
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• 1999

Fluorine-doped $SnO_2$ thin films were deposited on soda-lime glass substrates by reactive DC magnetron sputtering method. Crystallinity as well as electrical and optical properties of $SnO_2$ : F thin film were investigated as the variations of deposition conditions such as substrate temperature, DC Power, $O_2$ gas pressure, $SF_6$ gas pressure. $SnO_2$ : F thin film deposited with 5% $SF_6$ gas pressure showed electrical resistivities of $2.5\times10^{-3}$cm with the average optical transparency (about 80%) These electrical and optical properties were found to be related to the crystallinity of $SnO_2$ : F thin films.

• 한국세라믹학회지
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• 제24권2호
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• pp.101-110
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• 1987

The relative electrical conductivity of vacuum deposited Al films on a soda-lime(2947) and an alumino boro silicate(7809) glass was investigated with the variation of the relative humidity,temperature and film thickness. The structure and microstructure of Al films before and after exposure to the humidity wereexamined by the X-ray Diffractormenter(XRD) and Scanning Electron Microscope(SEM). As the relative humidity increased, the electrical conductivity of Al films on both glasses was decreased. However, the Al films on 7809 glass showed higher conductivity than that of 2947 glass under the same testing conditions. The decreasing of electrical conductivity was caused by the formation of Aluminum hydroxide which was made by the reaction between the aluminum films and water vapor.