• Journal of IKEEE
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• v.17 no.2
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• pp.214-220
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• 2013

Small area LDO (Low drop-out) regulator with pass transistor using body-driven technique is presented in this paper. The body-driven technique can decrease threshold voltage (Vth) and increase the current ID flowing from drain to source in current. The technique is applied to the pass transistor to reduce size of area and maintain the same performance as conventional LDO regulator. A pass transistor using the technique can reduce its size by 5.5 %. The proposed LDO regulator works under the input voltage of 2.7 V ~ 4.5 V and provides up to 150mA load current for an output voltage range of 1.2 V ~ 3.3 V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.26-33
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• 2010

This paper presents a multi-channel capacitive touch sensing unit for SoC applications. This unit includes a simple common processing unit and switch array to detect the touch sensing input by capacitive-time(C-T) conversion method. This touch sensor ASIC is designed based on the Capacitive-Time(C-T) conversion method to have advantages of small current and chip area, and the minimum resolution of the unit is 41 fF per count with the built-in sensing oscillator, LDO regulator and $I^2C$ for no additional external components. This unit is implemented in 0.18 um CMOS process with dual supply voltage of 1.8 V and 3.3 V. The total power consumption of the unit is 60 uA and the area is 0.26 $mm^2$.