• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.304-307
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• 2003

Replacement of aluminum by copper for interconnections in the semiconductor industry has raised a number of important issues. The integration of copper interconnection can be carried out by CMP(chemical mechanical polishing) is used to planarize the surface topography. In this experiments, we evaluated the optimization of several conditions for chemical additives during Cu CMP process. It was presented that the main cause of grown particle size is tartaric acid. The particle size was in inverse propotion to a quantity of bead and the time of milling process. The slurry stabilizer and oxidizer have been shown to have very good effect by addition in later milling process.

• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.1-4
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• 2003

The purpose of this study was to investigate the characteristics of slurry including phosphoric acid for chemical-mechanical planarization of copper and tantalum nitride. In general, the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H$_2$O$_2$) is the material that is used as an oxidizing agent in copper CMP. But, the hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H$_3$PO$_4$) as a stabilizer of the hydrogen peroxide as well as an accelerator of the tantalum nitride CMP process. We also estimated dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the 2$\^$nd/ step copper CMP slurry and hydrogen peroxide stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.136-139
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• 2003

Copper has attractive properties as a multi-level interconnection material due to lower resistivity and higher electromigration resistance as compared with Alumina and its alloy with Copper(0.5%). Among a variety of agents in Copper CMP slurry, $H_2O_2$ has commonly been used as the oxidizer However. $H_2O_2$ is so unstable that it requires stabilization to use as oxidizer Hence, stabilization of $H_2O_2$ is a vital process to get better yield in practical CMP process. In this article the stability of Hydrogen Peroxide as oxidizer of Copper CMP slurry has been investigated. When alumina abrasive was used, $\gamma$-particle Alumina C had a better stability than $\alpha$-particle abrasive. As adding KOH as pH buffering agent, $H_2O_2$ stability in slurry decreased. Urea hydrogen peroxide was used as oxidizer, an enhanced stability was gotten. When $H_3PO_4$ as $H_2O_2$ stabilizer was added, the decrease of $H_2O_2$ concentration in slurry became slower. Even though adding $H_2O_2$ in slurry after bead milling lead to better stability than in advance of bead milling, it had a lower dispersibility.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.557-560
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• 2003

Magnetorheological finishing(MRF) is a newly developed and recently commercialized for finishing optical components. The magnetorheological fluid consists of a water based suspension of carbonyl iron, nonmagnetic polishing abrasives, and small amounts of stabilizer. This magnetorheological fluid is pumped from conditioner on the rotating wheel and suctioned back to the conditioner, where it cooled to setpoint temperature and evaporative losses are replaced. This method could produce some problems in suction. So newly designed MRF tools is proposed in which MR fluid is not circulated and conditioned by the slurry. The new polishing mechanism is experimented. Measured surface roughness supports the validity of this mechanism.

• 공업화학
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• 제17권1호
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• pp.106-110
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• 2006

약물입자들을 나노크기로 만들어 이용하면 기존 제형에 비해 효과적일 수 있다. 특히 생체 내 낮은 흡수율을 가진 난용성 약물들은 그 입자의 크기가 감소함에 따라 흡수율과 생체이용률이 높아질 수 있다. 본 연구에서는 난용성 약물인 이트라코나졸의 나노입자를 안정화시키기 위하여 폴리비닐피롤리돈(PVP)과 다양한 당을 안정화제로 사용하였다. 당으로 안정화된 이트라코나졸 나노입자는 5일 동안의 습식분쇄 공정으로 성공적으로 제조되었다. 그 후 얻어진 액상의 입자를 분무 건조하고 그 건조분말의 재분산성을 알아보았다. 분무 건조 시 가공 변수의 효과를 알아보기 위해 온도, 압력, 유속 등을 변화시켰다. 입자크기 분석을 통해 당을 함유한 나노입자 건조분산체가 그렇지 않은 경우보다 재분산도가 더 좋은 것을 알 수 있었다. 또한 주사전자현미경(SEM)과 원자현미경(AFM)을 이용하여 나노 결정입자들이 구형에 가까운 모양인 것을 확인하였다.