• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• 한국터널지하공간학회 논문집
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• 제22권3호
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• pp.277-291
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• 2020

쉴드 TBM은 기존 재래식 터널(Drill and Blast)에 비하여 터널을 굴착하는 지반 및 선형조건에서 적용범위가 넓은 공법으로 대단면, 대심도, 초연약지반에서의 터널링 공법으로 중요성이 부각되고 있으며, 현재 13.3 m의 대구경 slurry 쉴드 TBM이 한강 하부 통과를 위한 시공을 준비하고 있다. 쉴드 TBM은 이수압식과 토압식 쉴드 TBM으로 구분되고, 각각의 특성에 따라 시공 중 관리 항목이 달라진다. 본 논문에서는 연약지반에 주로 시공되는 이수압식 쉴드 TBM을 대상으로 장비형식, 발생기원, 적용 사례 및 트러블 사례를 분석하였다. 또한, 적정 챔버압, 장비 전방으로의 이수 분출(또는 누수)가능성을 토피고 조건에 따라 2D 및 3D 모형실험 실시하였다. 이를 토대로 연약지반 조건에서 이수압식 쉴드 TBM 시공 시 적정 굴진면 토압과 챔버압 예측을 위한 기초 및 참고자료 제공 그리고 토피고 조건에 따른 이수분출 위험 높이를 제안하여 이수분출로 인한 안정성 및 환경요인 저하원인을 최소화하기 위한 방안을 제안하였다.

• 한국재료학회지
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• 제25권1호
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• pp.27-31
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• 2015

This paper proposes a novel way of fabricating aligned porous Sn by freeze-drying of camphene slurry with stannic oxide ($SnO_2$) coated Sn powders. The $SnO_2$ coated Sn powders were prepared by surface oxidation of the initial and ball-milled Sn powders, as well as heat treatment of tin chloride coated Cu powders. Camphene slurries with 10 vol% solid powders were prepared by mixing at $50^{\circ}C$ with a small amount of oligomeric polyester dispersant. Freezing the slurry was done in a Teflon cylinder attached to a copper bottom plate cooled at $-25^{\circ}C$. Improved dispersion stability of camphene slurry and the homogeneous frozen body was achieved using the oxidized Sn powder at $670^{\circ}C$ in air after ball milling. The porous Sn specimen, prepared by freeze-drying of the camphene slurry with oxidized Sn powder from the heat-treated Sn/tin chloride mixture and sintering at $1100^{\circ}C$ for 1 h in a hydrogen atmosphere, showed large pores of about $200{\mu}m$, which were aligned parallel to the camphene growth direction, and small pores in their internal walls. However, $100{\mu}m$ spherical particles were observed in the bottom part of the specimen due to the melting of the Sn powder during sintering of the green compact.

• 분석과학
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• 제32권5호
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• pp.173-184
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• 2019

As the size of semiconductors becomes smaller, it is necessary to perform high precision polishing of nanoscale. Ceria, which is generally used as an abrasive, is widely used because of its uniform quality, but its stability is not high because it has a high molecular weight and causes agglomeration and rapid precipitation. Such agglomeration and precipitation causes scratches in the polishing process. Therefore, it is important to accurately analyze the size distribution of ceria particles. In this study, a study was conducted to select dispersants useful for preventing coagulation and sedimentation of ceria. First, a dispersant was synthesized and a ceria slurry was prepared. The defoamer selection experiment was performed in order to remove the air bubbles which may occur in the production of ceria slurry. Dynamic light scattering (DLS) and asymmetrical flow field-flow fractionation (AsFlFFF) were used to determine the size distribution of ceria particles in the slurry. AsFlFFF is a technique for separating nanoparticles based on sequential elution of samples as in chromatography, and is a useful technique for determining the particle size distribution of nanoparticle samples. AsFlFFF was able to confirm the presence of a little quantities of large particles in the vicinity of 300 nm, which DLS can not detect, besides the main distribution in the range of 60-80 nm. AsFlFFF showed better accuracy and precision than DLS for particle size analysis of a little quantities of large particles such as ceria slurry treated in this study.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.67.1-67
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• 2002

• 한국세라믹학회지
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• 제51권3호
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• pp.145-149
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• 2014

A hydroxyapatite microsphere was prepared using a spray-drying method. The change in the shape as a function of the slurry concentration and the change in the degree of shrinkage according to the heat-treatment temperatures were observed. To obtain biomaterials with improved bio-stability, $CaHPO_4{\cdot}2H_2O$ and $Ca(OH)_2$ were mixed at a ratio of 6 : 4 and then ball-milled to synthesize hydroxyapatite. The hydroxyapatite microsphere was prepared using 30 wt% ~ 80 wt% hydroxyapatite slurry by a spray-drying method. For concentrations lower than 50 wt% or higher than 80 wt%, doughnut-shaped microspheres were produced. However, perfect microspheres were produced when using slurry concentrations of 50 wt% ~ 70 wt%. A dense microstructure was observed after a heat treatment at temperatures higher than $1100^{\circ}C$ and the size was reduced by 24.3% at these temperatures.

• 한국분말재료학회지
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• 제21권1호
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• pp.34-38
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• 2014

Cu-Ni alloys with unidirectionally aligned pores were prepared by freeze-drying process of CuO-NiO/camphene slurry. Camphene slurries with dispersion stability by the addition of oligomeric polyester were frozen at $-25^{\circ}C$, and pores in the frozen specimens were generated by sublimation of the camphene during drying in air. The green bodies were hydrogen-reduced at $300^{\circ}C$ and sintered at $850^{\circ}C$ for 1 h. X-ray diffraction analysis revealed that CuO-NiO composite powders were completely converted to Cu-Ni alloy without any reaction phases by hydrogen reduction. The sintered samples showed large and aligned parallel pores to the camphene growth direction, and small pores in the internal wall of large pores. The pore size and porosity decreased with increase in CuO-NiO content from 5 to 10 vol%. The change of pore characteristics was explained by the degree of powder rearrangement in slurry and the accumulation behavior of powders in the interdendritic spaces of solidified camphene.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.33-36
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The rise throughput and the stability in the device fabrication can be obtained by applying of CMP process to STI structure in 0.18$\mu\textrm{m}$ m semiconductor device. The reverse moat process has been added to employ in of each thin films in STI-CMP was not equal, hence the devices must to be effected, that is, the damage was occurred in the device area for the case of excessive CMP process and the nitride film was remained on the device area for the case of insufficient CMP process, and than, these defects affect the device characteristics. Also, we studied the High Selectivity Slurry(HSS) to perform global planarization without reverse moat step.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2005년도 춘계 학술발표회 논문집
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• pp.1448-1454
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• 2005

Horizontal displacement of slurry wall with strut is analyzed using 2-D numerical stress-displacement program, FLAC. Validation of the program results are performed using the pre- and ongoing excavation sections and further displacement is predicted in the stage of strut removal. The result show that the calculated displacement was very close to the measured displacement when 40% in-situ strut preloading is applied to the strut loading of the program considering the horizontal spacing of struts in the field. It was found that construction efficiency can be improved by partially removing the struts before putting slabs in the stage of subway structure construction.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.939-945
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• 2002

The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing (CMP) process in 0.18 $\mu\textrm{m}$ semiconductor device. However, it still has various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. In this paper, we studied the DOE (design of experiment) method in order to get the optimized CMP equipment variables. Various process parameters, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal CMP process parameters.