• 한국지반공학회논문집
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• 제18권4호
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• pp.249-256
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• 2002

Slurry trench의 안정성은 안정액의 유압이 filter cake 막을 통하여 trench 벽에 전달됨으로서 확보될 수가 있다. 지반조건의 영향에 따른 slurry trench 공법에서 주변 공극수압의 변화를 수치해석(FEM)으로 추적하였다. 이러한 주변 공극수압의 변화 요인으로는 안정액의 밀도, filter cake의 상태, 토질조건, 시간, trench 심도, 주변지하수위로 조사되었으며, 가장 큰 영향력을 보인 요인으로는 토질조건과 filter cake 상태로 나타났다.

• Geomechanics and Engineering
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• 제34권2호
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• pp.125-138
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• 2023

To improve the understanding of infiltration characteristic of modified slurry and the support efficiency of filter cake in silty sand strata, the slurry infiltration (SI) and filter cake formation (FCF) were investigated in a laboratory apparatus. The water discharge and the excess pore pressure at different depths of silty sand strata were measured during SI. The relationship between permeability coefficient/thickness ratio of filter cake (k_c/ΔL) and effective slurry pressure conversion rate of filter cake (η) were analyzed. Moreover, the SI and FCF process as well as the modification mechanism of CMC (carboxymethyl cellulose) were clarified. The experimental results indicate the formation of only external filter cake in the silty sand strata. The slurry particles obtain thicker water membrane after being modified by CMC, which blocks partial water path in filter cake and decreases the water discharge significantly. The silty sand excavated from tunnel face also contributes to the water discharge reduction. The k_c of the external filter cake ranges from 3.83×10^-8 cm/s to 7.44×10^-8 cm/s. The η of the external filter cake is over 96%, which decreases with increasing k_c/ΔL. A silty sand content within 10% is suggested during construction to ensure the uniformity of the filter cake.

• 한국입자에어로졸학회지
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• 제12권4호
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• pp.145-150
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• 2016

During the chemical mechanical planarization (CMP) process, slurry that comprises abrasive particles can directly affect the CMP performance and quality. Mainly, the large particles in the slurry can generate the defects on the wafer. Thus, many kinds of filters have been used in the CMP process to remove unwanted over-sized particles. Among these filters, the point-of-use (POU) filter is used just before the slurry is supplied onto the CMP pad. In the CMP research field, analysis of the POU filter has been relatively exceptional, and previous studies have not focused on the standardized filtration efficiency (FE) or filter performance. Furthermore, conventional evaluation methods of filter performance are not appropriate for POU filters, as the POU filter is not a membrane type, but is instead a depth type roll filter. In order to accurately evaluate the POU filter, slurry FE according to particle size was measured in this study. Additionally, a CMP experiment was conducted with filtered slurry to demonstrate the effects of filtered slurry on CMP performance. Depending on the flow rate and the filter retention size, the FE according to particle size was different. When the small and large particles have different FEs, the total filtration efficiency (TFE) can still have a similar value. For this reason, there is a need to measure the FE with respect to the particle size to verify the effects of the POU filter on the CMP process.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.557-561
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• 2001

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integraded circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding 1㎛ in size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particles agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectrics(IMD)-CMP process. The filter installation in CMP polisher could reduce defects after IMD-CMP process. As a result of micro-scratch formation, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. We have concluded that slurry filter lifetime is fixed by the degree of generating defects.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.707-713
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.34-37
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the inter-metal dielectrics (IMD) layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}m$ POU (point of use) filter, which is depth-type filter and has 80% filtering efficiency for the $1.0{\mu}m$ size particle. In this paper, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our preliminary results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the flow rate of slurry to overcome depth type filters weak-point, and to install the high spray of de-ionized Water (DIW) with high pressure.

• 한국지반공학회논문집
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• 제18권4호
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• pp.239-248
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• 2002

안정액(bentonite slurry)을 이용한 지하연속벽의 건설은 굴착된 trench 내에서 안정액이 침투케익과 표면케익을 포함한 불투수막을 형성함으로서 trench 의 안정성을 유지할 수가 있다. 그러므로 구조용 지하연속벽 건설이나 폐기물 매립장의 차수용 연속벽 건설시 지반조건 및 주변여건의 변화에 의하여 여러 가지 문제가 발생 될 수 있다. 본 논문은 안정액 유출과 불투수케익 형성과정을 대형실험으로 모델링하여 그 결과가 slurry trench 안정성에 미치는 영향을 평가하고, 현장조건에 적합한 설계절차를 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 한국축산시설환경학회지
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• 제16권3호
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• pp.215-226
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• 2010

본 연구는 목편살수여상 pilot 장치를 설치하여 스크레파 축사에서 배출되는 뇨오수를 원수로 사용하여 가동한 후 침출액비를 공시재료로 하여 상추 양액재배 시험을 실시하였다. 처리구는 침출액비 (SL) 단독처리구, 침출 액비+어분 (SL+FM), 침출액비+골분 (SL+BM), 침출액비+게껍질 (SL+CS) 혼합처리구. 침출 액비+부산물 (SL+FM+BM+CS) 혼합처리구, 대조구로 원예연 상추양액 (NS) 처리구 등 6개 처리구를 두었다. 침출액비와 부산물 혼합처리 후 전기전도도와 pH를 조정하여 상추의 양액재배를 실시한 결과를 요약하면 다음과 같다. 1. 목편살수여상 처리 과정중 pH는 처리 시작전 7.3에서 처리 후 8.5로 상승하였다. 전기전도도 (EC)는 처리전 17.05 mS/cm에서 처리 후 30일에는 9.7 mS/cm로 낮아졌다. 2. 침출액비는 부유물질 (SS)이 낮아 수경 재배시 관배수의 막힘문제 없이 활용이 가능하였다. 침출액비는 양분조성에서 칼륨함량이 높고 인산 함량이 낮았다. 3. 침출액비시용구 (SL)의 상추수량은 원예 연 표준양액재배 대비 75%를 나타내어 25% 수량저하를 나타내었다. 침출액비을 어분. 골분. 게껍질을 혼합한 처리구는 대조구 대비 85%. 79%. 80% 수량을 나타내어 어분의 첨가 효과가 가장 높았다. 침출액비와 어분 혼합액은 침출액비 단독처리구 보다 10% 증수를 나타내어 유기양액의 대체 원료로 사용이 가능 할 것으로 보인다.

• 반도체디스플레이기술학회지
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• 제3권4호
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• pp.45-49
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• 2004

We examined large particles and filter size effects of Central Chemical Supplying (CCS) system for STI-CMP on Light Point Defects (LPDs) after polishing. As manufacturing process recently gets thinner below 0.1 um line width, it is very important to keep down post-CMP micro-scratch and LPDs in case of STI-CMP. Therefore, we must control the size distribution of large particles in a slurry. With optimization of final filter size, CCS system is one of the solutions for this issue. The oxide and nitride CMP tests were accomplished using nano-ceria slurries made by ourselves. The number of large particles in a slurry and the number of LPDs on the wafer surface after CMP were reduced with decrease of the final filter size. Oxide removal rates slightly changed according to the final filter size, showing the good performance of self-made nano ceria slurries.