• 한국진공학회지
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• 제22권6호
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• pp.306-312
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• 2013

화학적 증기증착(Chemical Vapor Deposition, CVD) 방법을 이용하여 단결정 Indium antimonide (InSb) 나노와이어를 $SiO_2$ wafer 위에 성장시켰으며, 성장된 InSb 나노와이어의 결정성과 조성비를 X-Ray Diffraction (XRD)과 Energy Dispersive x-ray Spectroscopy (EDS)의 측정을 통하여 확인하였다. 또한, 반응 source로 사용된 InSb 분말의 기상화(vaporization) 정도를 source container의 모형, 즉 open 및 close 시스템으로 변형하여 조절하였고 이렇게 성장된 InSb 나노와이어들의 구조적 특성을 주사전자현미경(Scaning Electron Microscopy, SEM)을 통하여 자세히 분석함으로써, 그들의 성장과정을 Vapor-Liquid-Solid (VLS) 및 Vapor-Solid (VS) 메커니즘으로 설명하였다. Open-boat를 사용하여 나노와이어를 성장시켰을 경우, close-boat 의 경우와 비교하여 합성된 나노와이어의 yield가 높았으며 나노와이어의 길이와 두께도 증가하는 현상이 관측되었다. 이러한 결과는, InSb source 의 기상화 정도가 close-boat에서 보다 open-boat에서 더욱 가속화되면서 공통적으로 일어나는 VLS 성장 이외에 VS 성장이 추가적으로 진행되어지기 때문으로 추측되어진다. 또한, 반응시간을 증가시켰을 때, 나노와이어의 두께가 증가하는 결과를 통하여 InSb 나노와이어의 성장에서 VS 메커니즘이 우세하게 작용하고 있음을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.159-159
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• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.199-200
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• 2009

This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.25-27
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• 1998

The effect of gas activation on the formation of SiC layer on Si substrate using methane as a carbon source was investigated. Tungsten filaments, heated above 200$0^{\circ}C$, were used to activate the methane-hydrogen mixed gas. The dissociation of methane gas by the heated filament was enough to form a SiC layer successfully, which was very difficult without any activation. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The stoichiometry was also close to 1:1. However, the characteristic of the SiC layer was dependent on the heat-treatment condition. The general behavior of the layer growth with the variables was discussed.

• 한국재료학회지
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• 제28권5호
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• pp.279-285
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• 2018

Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.853-856
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• 2009

Highly polycrystalline copper indium diselenide (CuInSe2, CIS) thin films were deposited on glass or ITO glass substrates by two-stage metal organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cuand In/Se-containing precursors. First, pure Cu thin film was prepared on glass or ITO glass substrates by using a single-source precursor, bis(ethylbutyrylacetate)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, on the resulting Cu films, tris(N,N-ethylbutyldiselenocarbamato)indium(III) was treated to produce CuInSe2 films by MOCVD method at 400 ${^{\circ}C}$. These precursors are very stable in ambient conditions. In our process, it was quite easy to obtain high quality CIS thin films with less impurities and uniform thickness. Also, it was found that it is easy to control the stoichiometric ratio of relevant elements on demands, leading to Cu or In rich CIS thin films. These CIS films were analyzed by XRD, SEM, EDX, and Near-IR spectroscopy. The optical band gap of the stoichiometric CIS films was about 1.06 eV, which is within an optimal range for harvesting solar radiation energy.

• Advances in nano research
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• 제12권4호
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• pp.415-426
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• 2022

Nickel substituted cobalt-zinc ferrite nanoparticles with composition Co_0.5Zn_0.5Ni_xFe_2-xO₄ (x = 0.25, 0.5, 0.75, 1.0) were synthesized using a wet chemical method named citrate precursor method. Various characterizations of the prepared nanoferrites were done using X-ray powder diffractometry (XRD), Scanning electron microscopy (SEM), UV visible spectroscopy and Fourier transform spectroscopy technique (FT-IR). XRD confirmed the formation of cubic spinel structure of the samples with single phase having one characteristic peak at (311). The value of optical band gap (E_g) was found to decrease with Ni substitution and have values in the range 2.30eV to 1.69eV. A Fenton-type system was created by photocatalytic activity using source of visible light for removal of methylene blue dye. Observations revealed increase in the degradation of methylene blue dye with increasing nickel content in the samples. The degradation percentage was increased from 77.32% for x = 0.25 to 90.16% for x = 1.0 in one hour under the irradiation of visible light. Also, the degradation process was found to have pseudo first order kinetics model. Hence, it can be observed that synthesized nickel doped cobalt-zinc ferrites have good capability for water purification and its degradation efficiency enhanced with increase in nickel concentration.

• KSBB Journal
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• 제10권4호
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• pp.349-356
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• 1995

하수처리장의 활생오니를 분리원으로 하여 수십종의 PHA 생산균을 분리하였다. 일반적으로 hy­d droxyvalerate monomer unit의 전구물질로 알려져 있지않은 glucose로부터 비교적 많은 PHA를 생산 하는 균주를 공시균으로 선정하여 형태학척, 배양적, 생리학적 제 특성을 검토한 결과 Pseudomonas 속으 로 통정되었다. 균체 생육을 위한 최적 배양온도 벚 배양 pH는 각각 $37^{\circ}C$와 7.0이었으며, 최적 탄소원 으로셔 glucose 1 %, 최적 질소원으로서 $(NH_4)_2SO_4$ 0.2%, K1HPO. 0.3%, $KH_2PO_4$ 0.45% 였다. 최적 P PHA 생산조건을 조사하기 위하여 2단계 배양법을 이용하였다 PHA 생산은 배지성분중 $NH_4, O_4$, Mg가 결핍되 였을 때 향상되었고, 그중 $NH_4$, 의 결핍시 PHA 축적률과 HV monomer의 함량이 가장 높았다. C/N molar ratio 95.2에서 PHA 축적률이 가장 높았다. 공시균주 Pseudomonas sp. HJ는 alkane, alkanoic acid, alcohol을 탄소원으로 하여 P PHB/HV를 생산하였다. PHA의 생산량과 HV monomer의 함량은 이용된 기질에 따라 다양하였으며, 특히 hexadecane와 propiOnate를 탄소원으로 하였을 때 PHA중의 HV monomer의 함량이 49~74mol %로 매우 높았다. IH-NMR로셔 공시균으로 부터 분리정제된 PHA의 조성을 분석한 결과 PHB/ H HV copolymer임을 알 수 였였다

• Maxillofacial Plastic and Reconstructive Surgery
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• 제33권5호
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• pp.385-391
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• 2011

Purpose: The periosteum is a well-known source of osteogenic precursor cells for tissue-engineered bone formation. However, cultured endothelial or endothelial-like cells derived from periosteum have not yet been investigated. This study focused on endothelial-like cell culture from the periosteum. Methods: Periosteal tissues were harvested from the mandible during surgical extraction of lower impacted third molars. The tissues were treated with 0.075% type I collagenase in phosphate-buffered saline (PBS) for 1 hr at $37^{\circ}C$ to release cellular fractions. The collagenase was inactivated with an equal volume of DMEM/10% fetal bovine serum (FBS) and the infranatant was centrifuged for 10 min at 2,400 rpm. The cellular pellet was filtered through a $100{\mu}m$ nylon cell strainer, and the filtered cells were centrifuged for 10 min at 2,400 rpm. The resuspended cells were plated into T25 flasks and cultured in endothelial cell basal medium (EBM)-2. Results: Among the hematopoietic markers, CD146 was more highly expressed than CD31 and CD34. The periosteal-derived cells also expressed CD90 and CD166, mesenchymal stem cell markers. Considering that the expression of CD146 was constant and that the expression of CD90 was lower at passage 5, respectively, the CD146 positive cells in passage 5 were isolated using the magnetic cell sorting (MACS) system. These CD146 sorted, periosteal-derived cells formed tube-like structures on Matrigel. The uptake of acetylated, low-density lipoprotein, labeled with 1,1'-dioctadecyl-3,3,3',3'-tetramethylindocarbocyanine perchlorate (DiI-Ac-LDL) was also examined in these cells. Conclusion: These results suggest that the CD146-sorted positive cells can be referred to as periosteal-derived CD146 positive endothelial-like cells. In particular, when a co-culture system with endothelial and osteoblastic cells in a three-dimensional scaffold is used, the use of periosteum as a single cell source would be strongly beneficial for bone tissue engineering.