• 한국태양에너지학회 논문집
• /
• 제32권4호
• /
• pp.96-102
• /
• 2012

The minimum airflow of VAV terminal boxes is a key factor for comfort, indoor air quality(IAQ) and energy cost. If the minimum airflow is not reasonable, it would waste energy and make IAQ problems. There are two types of VAV terminal box control logic. One is the single maximum, another is the dual maximum control logic. Dual maximum control logic is more efficiency way to reduce the energy consumption. It has a minimum airflow set point and a heating maximum set point. It allows the minimum airflow set point to be much lower than single maximum control logic. A building simulation was conducted to evaluate the energy consumption and the IAQ according to the control logic of the V AV terminal box. In the simulation, dual maximum control logic can save the energy up to 6.5% compared to the single maximum control logic.

• 한국지리정보학회지
• /
• 제21권3호
• /
• pp.104-118
• /
• 2018

본 연구에서는 SWAT(Soil and Water Assessment Tool) 모형과 다지점 수문관측 자료를 이용하여 모형의 정확도 향상성을 평가하고자 한다. 대상유역은 한국수자원공사 용담시험유역의 수위자료를 측정하고 있는 용담댐($930.4km^2$), 동향($165.5km^2$), 천천($290.9km^2$), 주천($57.8km^2$), 석정($80.5km^2$) 유역으로 70%이상이 산림유역이다. 모형의 정확도를 향상시키기 위해 강수자료는 기상관측소 2개(장수, 금산)관측소와 기상청, 국토부, 수자원공사에서 관리하는 AWS 16개의 2003~2011년 일 강수량 자료를 이용하였다. 2003~2011년의 용담시험유역의 신뢰할만한 실측자료를 바탕으로 5지점의 일 유출량을 이용하여 단일지점(용담댐)과 다지점(동향, 천천, 주천, 석정)의 유출량을 검 보정하여 비교하였다. 모의 결과 단일지점의 소유역(동향, 천천, 주천, 석정)의 $R^2$는 0.84, 다지점은 0.88, 단일지점의 Nash-Sutcliffe의 모형효율계수 0.45, 다지점은 0.70으로 보다 향상된 모의 결과로 나타났다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.154-154
• /
• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• 한국전기전자재료학회논문지
• /
• 제16권10호
• /
• pp.871-880
• /
• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• 센서학회지
• /
• 제17권6호
• /
• pp.437-446
• /
• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2008년도 제39회 하계학술대회
• /
• pp.685-686
• /
• 2008

For the purpose of reducing the plant trip/transient by the failure of a single component during plant operation or maintenance, the list of critical components with Single Point Vulnerability (SPV) on KSNP (Korean Standard Nuclear Power Plant), the standardized methodology of SPV evaluation and the plan to improve reliability of the equipment have been established. In addition, SPV component lists for the other domestic operating Nuclear Power Plants have been made, and the proper procedure for SPV management will be developed.

• 아동학회지
• /
• 제18권2호
• /
• pp.163-176
• /
• 1997

Using survey data collected from 275 adolescent children of widowed or divorced single mother families, this study investigated the characteristics of family coping resources, including individual, financial, social, and mother-child relational resources and their effects on the psychological wellbeing of these adolescents. After controlling background variables of the family, higher depression among adolescents was associated with low grade point average, mother's high exposure to negative experiences after loss of father, low attachment to mother, and low sense of self-control. Furthermore, higher grade point average, strong attachment to mother, and high self-control in problem solving were factors predicting higher self-esteem of adolescents. Social network resources were not related to the psychological well-being of the adolescents. Discussion included recommendations for future research. Implications for policy and parent-child relations were discussed with a view to enhancing family functioning of adolescents in single-mother families.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
• /
• pp.41-43
• /
• 2005

The single-phase SRM(switched reluctance motor) has only one inductance variation and the positive torque is not generated in all section. So, the single-phase SRM can be started by itself if the rotor is placed at the positive slope of inductance variation by the starting device. In the previous study, equation of the magnetic force of the starting device at the acting point is derived. This paper describes the calculation of the magnetic force at the acting point by making an experiments.

• 한국조명전기설비학회지:조명전기설비
• /
• 제9권5호
• /
• pp.51-56
• /
• 1995

The transistors of single phase 3 level PWM Inverter compose output power transistors and neutral point clamping transistors, which are NPN transistors. Waveforms of driving signals for this are PWM waves for power transistors and period operating waves for neutral point clamping transistors, which signals made W-type modulation from rectangular and sine wave. The output power transistors operate at ON-time complementary and neutral point clamping transistors operate at OFF-time complementary respectively. Therefore, each transistors operate in half period at parallel. Characteristics of this inverter circuit is parallel switching method about series switching method of general inverter. As modulation of 3 level drive signals made from full-wave rectifier of sine wave and rectangular wave, which are level wave about 3 level of complementary transistor inverter. So, this circuit composed complementary operation inverter of NPN transistors only compare with PNP-NPN complementary inverter, which have high power 3 level inverter of complementary operation.

• 응용통계연구
• /
• 제4권1호
• /
• pp.33-45
• /
• 1991

변화시점 모형은 지금까지 한 시점에서 단 한 개의 관측자료를 갖는 모형만 생각해 왔다. 이러한 모형을 확장시켜 각 시점에 한 개 이상의 관측자료를 갖는 변화시점 모형을 생각한다. 이러한 모형에서 비모수적인 단측 그리고 양측 검정법을 찾았다. 검정 통계량은 지금까지 소개된 검정 통계량 형태를 확장시킨 형태이고 이들의 귀무가설 분포를 구하여 보았다. 또한 Monte Carlo연구를 통해 이들의 검정력을 비교해 보았다.