• Journal of the Korean Solar Energy Society
• /
• v.32 no.4
• /
• pp.96-102
• /
• 2012

The minimum airflow of VAV terminal boxes is a key factor for comfort, indoor air quality(IAQ) and energy cost. If the minimum airflow is not reasonable, it would waste energy and make IAQ problems. There are two types of VAV terminal box control logic. One is the single maximum, another is the dual maximum control logic. Dual maximum control logic is more efficiency way to reduce the energy consumption. It has a minimum airflow set point and a heating maximum set point. It allows the minimum airflow set point to be much lower than single maximum control logic. A building simulation was conducted to evaluate the energy consumption and the IAQ according to the control logic of the V AV terminal box. In the simulation, dual maximum control logic can save the energy up to 6.5% compared to the single maximum control logic.

• Journal of the Korean Association of Geographic Information Studies
• /
• v.21 no.3
• /
• pp.104-118
• /
• 2018

This study is to evaluate the accuracy improvement of the model using SWAT(Soil and Water Assessment Tool) model and multi - point hydrological observation data. The watershed is located in the Yongdam Dam($930.4km^2$), the Donghyang($165.5km^2$), the Chuncheon($290.9km^2$), the Juchun($57.8km^2$) and the Seokjeong($80.5km^2$). The watershed covers 70.0 % forest. In order to improve the accuracy of the model, precipitation data were used from two weather stations(Jangsu, Geumsan) and 16 AWS stations daily precipitation data(2003~2011) managed by KMA, MLIT, and K-water. Based on the reliable data of the Yongam test basin in 2003~2011, the runoff of single point (Yongdam dam) and multi-point (Donghyang, Chuncheon, Jucheon, Seokjeong). Simulation results show that the $R^2$ of the single subwatershed (Donghyang, Chuncheon, Jucheon, Seokjeong) is single point(0.84) and multipoint(0.88). For model efficiency coefficient of Nash-Sutcliffe at single point(0.45) and multipoint(0.70).

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.154-154
• /
• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.10
• /
• pp.871-880
• /
• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• Journal of Sensor Science and Technology
• /
• v.17 no.6
• /
• pp.437-446
• /
• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.685-686
• /
• 2008

For the purpose of reducing the plant trip/transient by the failure of a single component during plant operation or maintenance, the list of critical components with Single Point Vulnerability (SPV) on KSNP (Korean Standard Nuclear Power Plant), the standardized methodology of SPV evaluation and the plan to improve reliability of the equipment have been established. In addition, SPV component lists for the other domestic operating Nuclear Power Plants have been made, and the proper procedure for SPV management will be developed.

• Korean Journal of Child Studies
• /
• v.18 no.2
• /
• pp.163-176
• /
• 1997

Using survey data collected from 275 adolescent children of widowed or divorced single mother families, this study investigated the characteristics of family coping resources, including individual, financial, social, and mother-child relational resources and their effects on the psychological wellbeing of these adolescents. After controlling background variables of the family, higher depression among adolescents was associated with low grade point average, mother's high exposure to negative experiences after loss of father, low attachment to mother, and low sense of self-control. Furthermore, higher grade point average, strong attachment to mother, and high self-control in problem solving were factors predicting higher self-esteem of adolescents. Social network resources were not related to the psychological well-being of the adolescents. Discussion included recommendations for future research. Implications for policy and parent-child relations were discussed with a view to enhancing family functioning of adolescents in single-mother families.

• Proceedings of the KIEE Conference
• /
• 2005.10c
• /
• pp.41-43
• /
• 2005

The single-phase SRM(switched reluctance motor) has only one inductance variation and the positive torque is not generated in all section. So, the single-phase SRM can be started by itself if the rotor is placed at the positive slope of inductance variation by the starting device. In the previous study, equation of the magnetic force of the starting device at the acting point is derived. This paper describes the calculation of the magnetic force at the acting point by making an experiments.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.9 no.5
• /
• pp.51-56
• /
• 1995

The transistors of single phase 3 level PWM Inverter compose output power transistors and neutral point clamping transistors, which are NPN transistors. Waveforms of driving signals for this are PWM waves for power transistors and period operating waves for neutral point clamping transistors, which signals made W-type modulation from rectangular and sine wave. The output power transistors operate at ON-time complementary and neutral point clamping transistors operate at OFF-time complementary respectively. Therefore, each transistors operate in half period at parallel. Characteristics of this inverter circuit is parallel switching method about series switching method of general inverter. As modulation of 3 level drive signals made from full-wave rectifier of sine wave and rectangular wave, which are level wave about 3 level of complementary transistor inverter. So, this circuit composed complementary operation inverter of NPN transistors only compare with PNP-NPN complementary inverter, which have high power 3 level inverter of complementary operation.

• The Korean Journal of Applied Statistics
• /
• v.4 no.1
• /
• pp.33-45
• /
• 1991

In the analysis of changepoint model the situation where single observation is taken at each time point has been considered. In an effort to extend this to the general situation, we may consider the changepoint model with more than one observation at each time point. These tests are developed without assuming any particular form for the underlying distribution, we propose the one-sided and two-sided nonparametric tests by extending the tests that have been considered in the changepoint model with single observation at each time point and obtain their asymptotic null distributions. We compare the empirical powers among the extended changepoint tests under one-sided or two-sided alternatives. We also compare the powers of the extended changepoint tests with those of the original test via the Monte Carlo simulation.