• Proceedings of the KIEE Conference
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• 2008.04b
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• pp.131-133
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• 2008

This study presents on the analysis fire hazards of drum type electric washing machine. In order to analyze fire hazards fire experiment is conducted. The fire experiment is conducted to simulate under the normal condition and abnormal condition. The experiment under the abnormal condition is simulated in safety device failure, situation of accumulated dust and tracking phenomenon caused by humidity. The results show that fire hazard is high at the abnormal condition. In this paper, we suggest to use the safety device of low operating temperature in electric washing machine for reducing fire hazard.

• Advances in nano research
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• v.5 no.1
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• pp.61-67
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• 2017

A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1336-1339
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• 2007

Since organic thin film transistor (OTFT) provides simple and low cost processes, its application to the OTFT display has been studied. We developed an RC oscillator using organic thin film transistor and inverters with bootstrapping transistors. Device parameters were optimized by the simulation and OTFT RC oscillators were fabricated. The oscillator frequency and its dependence on resistance and bias voltage were studied. The organic TFT is adequate for low cost and simple process integrated circuits. The frequency of oscillation was simulated and measured. It is acceptable for low-cost microelectronic device and flat panel displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.158-162
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• 1995

We report rf and power characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor (HBTs) for X-band power applications. HBTs have been fabricated with polyimide a an interlayer dielectric. By characterizing the DC and RF characteristics we obtained the maximum current gain of 45, BV$\_$CEO/ of 10 V, fT of 30 GHz and f$\_$max/ of 17 GHz for device with 6x14$\mu\textrm{m}$$^2$emitter size. To extract accurate equivalent parameters, the De-embedded method was applied for extraction of parasitic parameters and the calculation of circuit equations for intrinsic parameters. Based on the Load-pull method, power characteristics was simulated and measured to get the maximum output power of the device.

• 한국태양에너지학회:학술대회논문집
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• 2008.11a
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• pp.103-111
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• 2008

One of the most popular internal combustion engines is the engine in the transportation device. Power is a parameter that shows the capabilities of an object that gives energy, for example the internal combustion engine. Power in this engine is measured by a device called dynamometer. The CFD (Computational Fluid Dynamic) fluent software was simulated several impeller variables to absorb power of engine. With that result, we knew the biggest dynamometer absorber power, cheapest and easy to be made. The hydraulic dynamometer is selected type of dynamometer as the result of design process. The basic principle of a hydraulic dynamometer is the same as centrifugal pump but it has low pump efficiency. The results of the test are maximum power and torque of the tested engine and the operation area of the selected hydraulic dynamometer.

• ETRI Journal
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• v.34 no.1
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.125-129
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• 1996

This paper presents the haptic rendering algorithm which gives the feel information to the operator by manipulating a virtual tool with a haptic device in the simulated environment. The movement of a virtual tool grasped by the operator, which is modeled as a square is displayed in the graphic screen of a computer and the virtual environment is modeled as deformable thin film. When the tool contacts with the virtual environment, the operator is forced to feel the contact and the feature of the deformed virtual environment through the torque control of th haptic device. Contact situations are modeled as close as to the reality considering friction, elasticity and multiple contacts. Several experiments are conducted and the effectiveness of the proposed algorithm is confirmed.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1413-1416
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• 2005

An infrared temperature sensor module developed for the detection of defects in a plate was modified to use in a cylinder. A set of optical fiber leads and a mechanism maintaining sensor-object distance constant were utilized for the modification of the IR sensor module. The detection performance was experimentally investigated, and the measured temperature was also compared with computed temperature distribution. The experimental outcome indicates that the detection of a simulated defect is readily available. The temperature distribution is better for defect detection than that with the previous device. In addition, the measured distribution is comparable to the calculated one using a heat conduction equation. The developed device of defect detection is suitable to be utilized in chemical processes where most of vessels and piping systems are in the shape of a cylinder.

• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.242-247
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• 2009

In this paper, we investigate interference between short-range radiocommunication devices (SRDs) with frequency hopping spread spectrum (FHSS) and direct sequence spread spectrum (DSSS) methods when they are in the same frequency bands. In order to analyze interference from unwanted emission of SRD with DSSS to that of FHSS, Monte-Carlo (MC) simulation method is employed and interference probabilities are calculated. We simulate interference scenarios in accordance with several duty cycles and bandwidths. It is also assumed that the propagation model is free space The effect of distance between interfering transmitter and victim receiver is analyzed and bit error rate (BER) is simulated. From the interference analysis results, it is shown that duty cycle affects compatibility more than bandwidth does. Also, we can make sure of the separation distance which satisfies BER criterion when there are only one interfering transmitter and multiple interfering transmitters.

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.149-155
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• 2006

In this study, the design of low voltage DC-DC converter with low triggering ESD (Electro-Static Discharge) protection circuit was investigated. The purpose of this paper is design optimization for low voltage(2.5V to 5.5V input range) DC-DC converter using CMOS switch. In CMOS switch environment, a dominant loss component is not switching loss but conduction loss at 1.2MHz switching frequency. In this study a constant frequency PWM converter with synchronous rectifier is used. And zener Triggered SCR device to protect the ESD phenomenon was designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 8V.