• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2002년도 춘계학술대회 논문집
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• pp.429-434
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• 2002

In order to improve the accuracy in the field of simiconductor and LCD research equipment, the demand of XYZ stage which is possible to control X axis, Y axis and Z axis has been increased steadly in place of the existing XY stage which is only practicable to X & Y axis positioning control. This paper presents a new pneumatic actuator for Micro-positioning control in the XYZ stage. Air pressure in a pneumatic actuator is controlled by the E/P Regulator. The control range of pneumatic actuator is about 100 micro-meters and it's construction concept is easy to apply a practical state

• 한국시뮬레이션학회논문지
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• 제14권3호
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• pp.1-12
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• 2005

Designing a production and equipment investment plan for semiconductors, many variables must be taken into account. However, depending on these variables could bring many changes to the plans, and the end result is hard to predict. Because it's hard to predict the end result, it's never easy to make a standard production plan. So, the goal of this project is to design a production plan based on past marketing patterns to satisfyall the variables and come up with a reasonable thesis on a standardized process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
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• pp.43-43
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• 1994

We studied chemical reactio of Eu metal on the in situ cleaved CdTe(110) surface by pphotoemission sppectroscoppy using synchrotron radiation. The chamber was maintained with base ppressure $\leq$2${\times}$10-10 mb during the expperiment. The expperiment was carried out in pphoton Factory in Jappan. Core level pphotoemission sppectroscoppy was carried out with Al K${\alpha}$ Line. The CdTe simiconductor was determined to be pp-typpe with low dopping concentration from Hall measurement. We found that there are two reacted pphases of Te with Eu (related to divalent Eu and trivalent Eu, resppectively) from least square fitting of Te 4d sppectra, but three is no indication of Cd reaction. Trivalent Eu exists after roughly one monolayer depposition (600 sec. depposition time is considered as one monolayer), which is also observed at Eu 3d core level sppectra. Overlayer Eu is metallized after roughly 2 monolayers depposition, as can be deduced from the fact that metallic edge near Fermi level begins to appear. The intensity of core-level of Te decreases expponentially at the initial stage (near one monolayer) and after one monolayer depposition it decreases more slowly due to Te out-diffusion. We categorized the growth mode of Eu on CdTe as S-K growth mode (cluster formation after one monolayer deppisition) from the relative intensity pplot of Te 4d normalized to the cleaved surface. At cleaved surface band bending is already established due to surface defects. At first 100 sec. depposition time the shift toward lower binding side by 0.6 eV is found at all core level sppectra of all elements in semiconductor. This shift is considered as the re-adjustment of surface Fermi level to the pposition induced by Eu metal (0.2 eV above the valence band maximum).