• Title/Summary/Keyword: simSTB

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Conceptual Study of Simulated Software Test Bench Based On Processor Emulator for Integrated Performance Verification of Satellite On-board Software (위성 온-보드 소프트웨어 통합 성능 검증을 위한 프로세서 에뮬레이터 기반 시뮬레이트 소프트웨어 테스트 벤치 개념 연구)

  • Koo, Cheol-Hea;Yang, Koon-Ho;Choi, Seong-Bong
    • Journal of Astronomy and Space Sciences
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    • v.25 no.3
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    • pp.321-328
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    • 2008
  • Software Test Bench should be simulated with maximum quality to real execution environment in order to verify the performance of software which is changed or newly developed. And especially faults detection and recovery are crucial function of the performance test environment. Simulated Software Test Bench based on processor emulator is attractive and can be available prior to hardware Software Test Bench if real time performance aspect is ignored. In this paper, the results of conceptual study for developing the simulated Software Test Bench are presented.

Development of Distributed Generic Simulator (GenSim) through Invention of Simulated Network (simNetwork)

  • Koo, Cheol-Hea;Lee, Hoon-Hee;Cheon, Yee-Jin
    • Journal of Astronomy and Space Sciences
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    • v.28 no.3
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    • pp.241-252
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    • 2011
  • A simulated network protocol provides the capability of distributed simulation to a generic simulator. Through this, full coverage of management of data and service handling among separated simulators is achieved. The distributed simulation environment is much more conducive to handling simulation load balancing and hazard treatment than a standalone computer. According to the simulated network protocol, one simulator takes on the role of server and the other simulators take on the role of client, and client is controlled by server. The purpose of the simulated network protocol is to seamlessly connect multiple simulator instances into a single simulation environment. This paper presents the development of a simulated network (simNetwork) that provides the capability of distributed simulation to a generic simulator (GenSim), which is a software simulator of satellites that has been developed by the Korea Aerospace Research Institute since 2010, to use as a flight software validation bench for future satellite development.

SMI Compatible Simulation Scheduler Design for Reuse of Model Complying with SMP Standard

  • Koo, Cheol-Hea;Lee, Hoon-Hee;Cheon, Yee-Jin
    • Journal of Astronomy and Space Sciences
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    • v.27 no.4
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    • pp.407-412
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    • 2010
  • Software reusability is one of key factors which impacts cost and schedule on a software development project. It is very crucial also in satellite simulator development since there are many commercial simulator models related to satellite and dynamics. If these models can be used in another simulator platform, great deal of confidence and cost/schedule reduction would be achieved. Simulation model portability (SMP) is maintained by European Space Agency and many models compatible with SMP/simulation model interface (SMI) are available. Korea Aerospace Research Institute (KARI) is developing hardware abstraction layer (HAL) supported satellite simulator to verify on-board software of satellite. From above reasons, KARI wants to port these SMI compatible models to the HAL supported satellite simulator. To port these SMI compatible models to the HAL supported satellite simulator, simulation scheduler is preliminary designed according to the SMI standard.

Effect of Retained Austenite on Rolling Contact Fatigue of Nitrocarburized High-Carbon Chromium Bearing Steel (침질탄화처리한 고탄소 크롬 베어링강의 회전접촉 피로거동에 미치는 잔류오스테나이트의 영향)

  • Choi, Byung Young;Kim, Dong Keon;Kim, Chang Seok;Jin, Jai Koan
    • Journal of the Korean Society for Heat Treatment
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    • v.9 no.3
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    • pp.169-176
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    • 1996
  • Effect of retained austenite on rolling contact fatigue of nitrocarburized high-carbon chromium bearing steel has been investigated to develop surface-hardened bearing steel with imprved resistance to rolling contact fatigue. Fatigue tests were conducted in elesto-hydrodynamic lubricating conditions at a shaft speed of 5,000rpm, under max, hertzian stress of $492kg/mm^2$. Volume fraction of retained austenite in austenitic nitrocarburized STB2 steel was controlled by tempering at various temperature, $200{\sim}250^{\circ}C$. It was observed using TEM that decomposition of retained austenite during tempering at $250^{\circ}C$ was the highest in quantity, resulted in formation of lower bainite. Rolling contact fatigue life of the specimens with lower bainite, formed by decomposition of retained austenite, was improved in comparison with there of specimens with more amount of retained austenite.

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Ordinary Magnetoresistance of an Individual Single-crystalline Bi Nanowire (자발 성장법으로 성장된 단결정 Bi 단일 나노선의 정상 자기 저항 특성)

  • Shim, Woo-Young;Kim, Do-Hun;Lee, Kyoung-Il;Jeon, Kye-Jin;Lee, Woo-Young;Chang, Joon-Yeon;Han, Suk-Hee;Jeung, Won-Young;Johnson, Mark
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.166-171
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    • 2007
  • We report the magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method. We have successfully fabricated a four-terminal device based on an individual 400-nm-diameter nanowire using plasma etching technique to remove an oxide layer forming on the outer surface of the nanowire. The transverse MR (2496% at 110 K) and longitudinal MR ratios (38% at 2 K) for the Bi nanowire were found to be the largest known values in Bi nanowires. This result demonstrates that the Bi nanowires grown by the spontaneous growth method are the highest-quality single crystalline in the literatures ever reported. We find that temperature dependence of Fermi energy ($E_F$) and band overlap (${\triangle}_0$) leads to the imbalance between electron concentration ($n_e$) and hole concentration ($n_h$) in the Bi nanowire, which is good agreement with the calculated $n_e\;and\;n_h$ from the respective density of states, N(E), for electrons and holes. We also find that the imbalance of $n_e\;and\;n_h$ plays a crucial role in determining magnetoresistance (MR) at T<75 K for $R_T$ and at T<205 K for $R_L$, while mean-free path is responsible for MR at T>75 K for $R_T$ and T>205 K for $R_L$.