• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.693-696
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• 2004

For InGaP/GaAs HBT applications, we have developed characterized MIM capacitors with thin $1000{\AA}$ PECVD silicon nitride which were deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $300^{\circ}C$ and had the capacitance density of 600 pF/$mm^2$ with the breakdown electric fields of 3073 MV/cm. Three PECVD process parameters were designed to lower the refractive index and then lower the deposition rate of silicon nitride films for the high breakdown electric field. At the PECVD process condition of gas mixing rate (0.92), working pressure (1.3 Torr), RF power (53 W), the AFM Rms value of about $1000{\AA}$ silicon nitride on the bottom metal was the lowest of 0.662 nmand breakdown electric fields were the highest of about 73 MV/cm.

• Journal of Welding and Joining
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• v.28 no.5
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• pp.80-85
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• 2010

This study focused on laser assisted machining (LAM) of silicon nitride ceramic that efficiently removes the material through machining of the softened zone by local heating. The effects of laser-assisted machining parameters were studied for cost reduction, and active application in processing of silicon nitride ceramics in this study. Laser assisted machining of silicon nitride allows effective cutting using CBN tool by local heating of the cutting part to the softening temperature of YSiAlON using by the laser beam. When silicon nitride is sufficiently preheated, the surface is oxidized and decomposed and then forms bloating, micro crack and silicate layer, thereby making the cutting process more advantageous. HIPSN and SSN specimens were used to study the machining characteristics. Higher laser power makes severer oxidation and decomposition of both materials. Therefore, HIPSN and SSN specimens were machined more effectively at higher power.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.211-212
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• 2002

Friction and wear of pressureless sintered Ti(C,N)-WC ceramics were studied using a ball-on-reciprocating flat apparatus in open air. The silicon nitride ball and the cemented carbide (WC-Co) ball were used against the Ti(C,N)-WC plate samples. The friction coefficients of the Ti(C,N)-WC samples against the silicon nitride ball and the cemented carbide ball were about 0.57 and 0.3, respectively. The wear coefficient of the sample without WC addition was 5 times as large as that of the sample with 10 mole % WC addition when tested against the silicon nitride ball under 98 N. The higher wear coefficient of Ti(C,N)-0WC was explained in part by larger grain size. Wear occurred mainly by grain dislodgment after intergranular cracking mainly caused by the accumulated stress within the grains.

• Journal of the Korean Ceramic Society
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• v.21 no.4
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• pp.361-365
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• 1984

This study has been carried out to sinter silicon nitride with additives and to show the effect of surface finishments on its strength and Weibull modulus which are two most important factors for its applications into structural ceramics. Silicon nitride was sintered with the additions of $Al_2O_3$ and $Y_2O_3$ under pressureless cond-ition. The optimum properties were obtained by sintering at 1, 75$0^{\circ}C$ for 3hrs under $N_2$ atmosphere and the strength showed 6, 500kg/$cm^2$ at room temperature and 3, 300kg/$cm^2$ at 120$0^{\circ}C$. The effects of surface treatment on the strength of sintered $Si_3N_4$ were studied and the results showed that fine surface treatment increased the strength by up to 50% The Weibull analysis showed that its modulus was increased with increasing fineness of surface finishments. It was concluded that the mechanical properties of sintered silicon nitride could be improved by fine surface grinding which implied the brittle-fracture nature of sintered silicon nitride.

• Membrane and Water Treatment
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• v.9 no.1
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• pp.63-68
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• 2018

Molecular dynamics simulations were used to study the removal of Cd(II) as a heavy metal from wastewater using armchair carbon nanotube, boron nitride nanotube and silicon carbide nanotubes under applied electric field. The system contains an aqueous solution of $CdCl_2$ as a heavy metal and a (7,7) nanotube as a nanostructured membrane, embedded in a silicon nitride membrane. An external electric field was applied to the considered system for the removal of $Cd^{2+}$ through nanotubes. The simulation results show that in the same conditions, considered armchair nanotubes were capable to remove $Cd^{2+}$ from wastewater with different ratios. Our results reveal that the removal of heavy metals ions through armchair carbon, boron nitride and silicon carbide nanotubes was attributed to the applied electric field. The selective removal phenomenon is explained with the calculation of potential of mean force. Therefore, the investigated systems can be recommended as a model for the water treatment.

• Journal of Powder Materials
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• v.5 no.2
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• pp.133-138
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• 1998

The effect of $\beta$-$Si_3N_4$ seeding on microstructural development of silicon nitride based materials has been investigated. In particular, to observe more distinctly the abnormal grain growth in pressureless sintering, fine $\alpha$-$Si_3N_4$(mean particle size: 0.26 ${\mu}m$) powder classified by sedimentation method was used. It was possible to prepare silicon nitride with abnormally grown grains under low nitrogen pressure of 1 atm thanks to the heterogeneous nucleation on $Si_3N_4$ seed particles. The size and morphology of silicon nitride grains were strongly influenced by the presence of $\beta$-$Si_3N_4$ seed and overall chemical composition. For specimens with initially low $\beta$-content, the large grains grew without a significant impingement by other large grains. On the contrary, for specimens with initially high $\beta$-content, steric hindrance was effective. The resulting microstructure was less inhomogeneous and characterized by unimodal grain size distribution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1203-1208
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• 1996

Crack growth tests on silicon nitride have been made to clarify the crack growth characteristics under static and cyclic loading. Under constant K(K: stress intensity factor) static loading the crack growth rate in silicon nitride decreases with increasing crack extension and is finally arrested. The cack growth resistiance is largely reduced by the application of stress cycling and though the crack growth resistiacne increases with increasing of crack extension the increasing rate is much smaller under cyclic loading than under static loading.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.861-862
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• 2006

The suitable tools for CGI material has not been developed yet because of high hardness, high toughness and very low machininability compared to the grey cast iron. And the tool life has been decreased as the contents of Ti in CGI material. From this research, we were able to do the high speed machining by using high toughness silicon nitride ceramic tools. The silicon nitride ceramic tool grade was specially designed and prepared with microstructure of elongated grains with higher aspect ratio (c/a) than conventional one.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.119-124
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• 1999

Silicon nitride ceramics with highly oriented microstructure were prepared by tape casting a slurry containing 5 wt% of the silicon nitride whiskers. The whiskers were aligned in the casting direction and worked as seeds for the grain growth. The anisotropy was observed from the sintering shrinkage, Vickers indentation crack lengths, and XRD patterns. The cracks were much longer on the surface normal to the aligned grains than on the tape casting surface where the lateral cracks were also observed. The effect of sintering additives and the annealing treatment on the indentation crack length was examined. The sample with higher silica content had longer cracks than the one with lower silica content. The crack length anisotropy increased after annealing at 2123K.