• 한국정밀공학회지
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• 제27권7호
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• pp.117-122
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• 2010

Recently, aspheric glass lens molding core is fabricated with tungsten carbide(WC). If molding core is fabricated with silicon carbide(SiC), SiC coating process, which must be carried out before the Diamond-Like Carbon(DLC) coating can be eliminated and thus, manufacturing time and cost can be reduced. Diamond Like Carbon(DLC) is being researched in various fields because of its high hardness, high elasticity, high durability, and chemical stability and is used extensively in several industrial fields. Especially, the DLC coating of the molding core surface used in the fabrication of a glass lens is an important technical field, which affects the improvement of the demolding performance between the lens and molding core during the molding process and the molding core lifetime. Because SiC is a material of high hardness and high brittleness, it can crack or chip during grinding. It is, however, widely used in many fields because of its superior mechanical properties. In this paper, the grinding condition for silicon carbide(SiC) was developed under the grinding condition of tungsten carbide. A silicon carbide molding core was fabricated under this grinding condition. The measurement results of the SiC molding core were as follows: PV of 0.155 ${\mu}m$(apheric surface) and 0.094 ${\mu}m$(plane surface), Ra of 5.3 nm(aspheric surface) and 5.5 nm(plane surface).

• 분석과학
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• 제5권4호
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• pp.359-366
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• 1992

본 논문은 마이크로 Raman 분광분석법을 이용하여 국부적 열산화 후 실리콘 표면에 유입되는 스트레스를 평가한 것이다. 국부적 열산화 후 실리콘 표면에 유입되는 스트레스는 실리콘 산화막과 active 영역의 경계 부분에서 최대치를 나타내었다. Active 영역의 크기가 작아질수록 스트레스량은 증가하며, 이는 스트레스가 active 영역의 크기에 의존함을 보여 주는 것이다. 또한, active 영역이 $0.45{\mu}m$인 세 가지 소자 분리 공정, A, B, moB를 평가한 결과 moB 공정의 스트레스 값이 가장 작았으며, 새부리 효과도 가장 작았다.

• Transactions on Electrical and Electronic Materials
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• 제5권2호
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• pp.41-49
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• 2004

Layer transfer process has emerged as a promising tool in the field of thin silicon solar cell technology. This process can use mono-crystalline silicon as a surface for the epitaxial growth of a thin layer of silicon. It requires some sort of surface conditioning of the substrate due to which the surface become suitable for homo-epitaxy and lift off after solar cell fabrication. The successful reuse of substrate has been reported. The use of the conditioned surface without any kind of epitaxial layer growth is also the issue to be addressed. This review paper basically describes the five most cost effective methods on which works are in progress. Several types of possible problems envisaged by different research groups are also incorporated here with necessary discussion. Work in Korea has already started in this area in collaboration IC Design and Fabrication Centre, Jadavpur University, India and that also has been mentioned.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• 한국재료학회지
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• 제23권6호
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• pp.316-321
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• 2013

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM ($80^{\circ}$ tilted at ${\times}200$) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 ${\mu}m/min$ was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 $ohm{\cdot}cm$ at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

• Applied Microscopy
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• 제40권4호
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• pp.267-270
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• 2010

The skin is the largest organ of the integument system whose surface is closely related with many physiological and pathological conditions. Various methods are used to understand the structural and functional status of human skin. We would like to present usefulness of scanning electron microscopic (SEM) observation of skin replica and its significance of training module for a novice. The silicon replicas from several regions of the body (hand, finger, forearm, lip, and face) were casted by applying Exafine$^{(R)}$ mixture. The positive replicas were prepared by applying EPON 812 mixture on negative silicon replicas. Some of the negative silicon replicas were cut with a razor blade and surface profiles were observed. The negative and positive replicas were coated with platinum and were observed under the scanning electron microscope. We could investigate the detailed structures of the human skin surface without any physical damage to the subject. The positive replicas depicted real surface structure of the human skin vividly. The cross sectional view of the negative silicon replicas provided surface profile clearly. The scanning electron microscopic observation of the human skin replicas would be useful to study skin surface structures and to evaluate medical and esthetical applications.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.232-242
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• 2015

Analytical study of surface recombination at the $Si/SiO_2$ interface is carried out in order to set the optimum surface conditions that result in minimum dark base current and maximum open circuit voltage in silicon solar cells. Recombination centers are assumed to form a continuum rather than to be at a single energy level in the energy gap. It is shown that the presence of a hump in the dark I-V characteristics of high efficiency PERL cells is due to the dark current transition from a high surface recombination regime at low voltage to a low surface recombination regime at high voltage. Successful fitting of reported dark I-V characteristics of a typical PERL cell is obtained with several possible combinations of surface parameters including equal electron and hole capture cross sections.

• 한국표면공학회지
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• 제30권6호
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• pp.382-390
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• 1997

Good appearance of insulation coating is required for non-oriented silicon steel sheets, The property is influenced by both the chemical composition of coating solution and the species of resin. The composition of inorganic-organic coating was studied to obtain good surface quality for non-oriented silicon steel. The greenish degree of coating surface depended on $Cr^{3+}$ content in the coating layer, which was satisfied when chromate content was more than 54.60 wt. %, in the coating solution. The homogeneous pattern and roughness of the coating surface depended on spreading property of the resin. Surface appearance of the coating could be improved by using resin with good spreading property at the chemical composition of chromate 59.00 wt.%.. resin 34.23wt.%, and etyhylene glycol 6.67 wt.% without colloidal sillica.

• 한국음향학회지
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• 제3권2호
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• pp.13-22
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• 1984

A surface acoustic wave signal processing device using the silicon surface state is presented and shown capable of storing a reference signal and later correlating another signal with the stored reference. The device memory consists of the storage of the spatial 2k pattern of an acoustic wave as stored charges in the surface state of silicon surface. Results of experiments are presented which characterize the operation of device. Simpliied models for charging process and nonlinear acoustoelectric interactions based on consideration of single surface state at the surface of silicon The validity of simplified model has been qualitatibely confirmed with experimental results and the application of this device to aprogrammable matched filter of communication is considered.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.494-496
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• 1996

The purpose of this study is to investigate the effect of process conditions on pore distribution in porous silicon layer prepared by electrochemical reaction. Porous silicon layers formed on p-type silicon wafer show the network structure of fine porse whose diameters are less than 100${\AA}$. In n-type porous silicon, selective growth was found on the pore surface by wet etching process after PR patterning. And numerical method showed high current density on the pore tip. With this result we confirmed that pore formation has two steps. First step is the initial attack on the surface and second step is the directional growth on the pore tip.