• Title/Summary/Keyword: silicon sensor

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Computational analysis of the effect of SOI vertical slot optical waveguide specifications on integrated-optic biochemical waveguide wensitivity

  • Jung, Hongsik
    • Journal of Sensor Science and Technology
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    • v.30 no.6
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    • pp.395-407
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    • 2021
  • The effect of the specifications of a silicon-on-insulator vertical slot optical waveguide on the sensitivity of homogeneous and surface sensing configurations for TE and TM polarization, respectively, was systematically analyzed using numerical software. The specifications were optimized based on the confinement factor and transmission power of the TE-guided mode distributed in the slot. The waveguide sensitivities of homogeneous and surface sensing were calculated according to the specifications of the optimized slot optical waveguide.

Bluetooth Low-Energy Current Sensor Compensated Using Piecewise Linear Model

  • Shin, Jung-Won
    • Journal of Sensor Science and Technology
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    • v.29 no.5
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    • pp.283-292
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    • 2020
  • Current sensors that use a Hall element and Hall IC to measure the magnetic fields generated in steel silicon core gaps do not distinguish between direct and alternating currents. Thus, they are primarily used to measure direct current (DC) in industrial equipment. Although such sensors can measure the DC when installed in expensive equipment, ascertaining problems becomes difficult if the equipment is set up in an unexposed space. The control box is only opened during scheduled maintenance or when anomalies occur. Therefore, in this paper, a method is proposed for facilitating the safety management and maintenance of equipment when necessary, instead of waiting for anomalies or scheduled maintenance. A Bluetooth 4.0 low-energy current-sensor system based on near-field communication is used, which compensates for the nonlinearity of the current-sensor output signal using a piecewise linear model. The sensor is controlled using its generic attribute profile. Sensor nodes and cell phones used to check the signals obtained from the sensor at 50-A input currents showed an accuracy of ±1%, exhibiting linearity in all communications within the range of 0 to 50 A, with a stable output voltage for each communication segment.

Thermal Analysis of Highly Integrated Gas Sensor Array with Advanced Thermal Stability Properties (안정성이 개선된 고집적 가스센서 어레이 열해석)

  • 정완영;임준우;이덕동
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.12
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    • pp.17-23
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    • 2003
  • A sensor array (3${\times}$5$\textrm{mm}^2$ in diaphragm dimension) of 12 sensing clements with different operating temperatures was optimized with respect to thermal operation. This sensor array with single heater on a glass diaphragm over back-etched silicon bulk realizes a novel concept of a sensor array: an array of sensor clements operated at different temperatures can yield more information than single measurement. The proposed micro sensor array could provide well-integrated array structure because it had only single heater at the center of the diaphragm and used the various sensing properties of two kinds of metal oxide layers with various operating temperatures.

Formation and Humidity-Sensitive Characteristics of Anodically Oxidized porous Silicon Films (다공질 실리콘 양극산화막의 형성과 감습특성)

  • Choi, Bok-Gil;Rhie, Dong-Hee;Ryoo, Jee-Ho;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1066-1068
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    • 1995
  • The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical oxidation and current density. The humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by increasing a porosity of PSL.

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Fabrication of silicon nano-ribbon and nano-FETs by using AFM anodic oxidation

  • Hwang, Min-Yeong;Choe, Chang-Yong;Jeong, Ji-Cheol;An, Jeong-Jun;Gu, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.54-54
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    • 2009
  • AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.

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Design and fabrication of a highly sensitive microcalorimetric biosensor by bulk micromachining (벌크 마이크로 머시닝을 이용한 고감도 미세 칼로리미터의 설계 및 제작)

  • Yoon, S.I.;Kim, J.H.;Kwak, B.S.;Kim, Y.J.;Jung, H.I.
    • Journal of Sensor Science and Technology
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    • v.15 no.3
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    • pp.164-167
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    • 2006
  • Calorimeter is one of widely used biosensors. Conventional or existing calorimeters are realized directly on a silicon wafer which has very high thermal conductivity. It results in decreasing temperature difference between junctions and it makes a sensitivity of calorimeter to be decreased. In this study, the microcalorimeter was made by using MEMS(Micro Electro Mechanical Systems)-technology and hot junctions of the microcalorimeter are released from a silicon substrate to reduce loss of generated heat by reactions between biomolecules. Sensitivity of the released microcalorimeter was 18 mV/M which is 1.5 times higher than another calorimeters on silicon substrate by reactions between biotin and streptavidin.

A Study on the Fracture behavior in Silicon Wafer using the Ultra-Precision Micro Positioning System (초미세 위치결정시스템을 이용한 실리콘 웨이퍼의 파괴거동에 관한 연구)

  • 이병룡
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.9 no.1
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    • pp.38-44
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    • 2000
  • The background of this study lies in he investigation of the formation mechanism of ductile mode(nkanometer-size) chips of brittle materials such as fine ceramics glass and silicon. As the first step to achieve this purpose this paper intends to observe the micro-deformation behavior of these materials in sub${\mu}{\textrm}{m}$ depth indentation tests using a diamond indentor. In this study it was developed Ultra-Micro Indentation. Device using the PZT actuator. Experimentally by using the Ultra-Micro Indentation device the micro fracture behavior of the silicon wafer was investigated. It was possible that ductile-brittle transition point in ultimate surface of brittle material can be detected by adding an acoustic emission sensor system to the Ultra-Micro Indentation appartus.

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(Various Electionic system Applications by Using Silicon-based Thin Films) (실리콘계 박막을 이용한 다양한 전자시스템 응용)

  • 이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.186.2-189
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    • 2001
  • 요실리콘을 기반으로 하는 박막은 반도체 재료로 Si, Si:Ge, SiC등이 사용되고있으며, 절연박막재료로 SiN, SiOxNy, SiOx 등이 있다. 이들 재료는 국내 반도체 산업의 핵심위치에 있는 물질이다. 한국 산업의 근간이라 할 수 있는 메모리분야에 적용될 뿐만 아니라 TFT-LCD, 태양전지, 각종 센서, X-ray 사진 촬영기 개발에도 응용되고 있다. 본 논문에서는 Silicon-based 박막의 제조기법과 그에 따른 다양한 실리콘 박막 실리콘 트랜지스터를 이용한 능동형 액정과 유기발광 화소제어 활용, 센서 응용 부분에서 태양전지, X-ray 촬영기활용 분야에서 기술현황 시장분석을 통해 차세대 연구개발의 방향을 제시하고자 한다. 현재 국내에서 실리콘 박막의 가장 큰 응용 분야는 메모리 소자의 평판디스플레이의 TFT-LCD 시장이다. 그러나 실리콘 박막으로 가능한 응용분야는 아직 산업계에서 열매를 맺지 못한 분야가 더 많고 실제로 적용할 수 있는 분야의 다양함을 본 논문을 통해 소개한다.

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Sensing Properties of Porous Silicon Layer for Organic Vapors (다공질 실리콘의 유기가스 검지 특성)

  • 김성진;이상훈;최복길
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.963-968
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    • 2002
  • In this work, porous silicon (PS) layer is investigated as a sensing material to detect organic vapors such as ethanol (called alcohol), methanol, and acetone in low concentrations. To do this, PS sensors were fabricated. They have a membrane structure and comb-type electrodes were used to detect the change of electrical resistance effectively. PS layer on Si substrates was formed by anodization in HF solution of 25%. From fabricated sensors, current-voltage (Ⅰ-Ⅴ) curves were measured for gases evaporated from 0.1 to 0.5% organic solution concentrations at 36$\^{C}$. As the result, all curves showed rectifying behavior due to a diode structure between Si and the PS layer. The conductance of most sensors increased largely at high voltage of 5V, but the built-in potential on the measured Ⅰ-Ⅴ curve was lowered inversely by the adsorption effect of the organic vapors with high dipole moment.