• Title/Summary/Keyword: silicon sensor

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Acoustic Performance Enhancement in PVDF Speakers by Using Buckled Nanospring Carbon Nanotubes

  • Ham, Sora;Lee, Yun Jae;Kim, Jung-Hyuk;Kim, Sung-Ryong;Choi, Won Kook
    • Journal of Sensor Science and Technology
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    • v.28 no.6
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    • pp.360-365
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    • 2019
  • A polyvinylidene fluoride (PVDF)-based film speaker is successfully fabricated with enhanced bass sound by incorporating buckled nanospring carbon nanotubes (NS-CNTs) as fillers. Various concentrations up to 1-7 wt% of uniformly dispersed buckled NS-CNTs are loaded to increase the beta (β)-phase fraction, crystallinity, and dielectric constant of the speaker, and this results in the bass part enhancement of about 19 dB full scale (dBFS) at 7 wt% filler loading of the piezoelectric film speaker.

Comparison of the Performance of Thin Film Pressure Sensors with Polyimid and Silicon Oxide as a Insulating Layer (절연층으로 폴리이미드와 실리콘 산화막을 사용한 박막 압력 센서의 특성 비교)

  • Min, Nam-Ki;Lee, Seong-Rae;Chun, Jae-Hyung;Kim, Jeong-Wan
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.296-298
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    • 1997
  • The performance of thin film pressure sensors with polyimide and silicon oxide as a insulating layer between the stainless steel diaphragm and the Cu-Ni strain gauges is presented. The polyimide was spun on the stainless steel diaphragm and cured in an oven. The silicon oxide was deposited by rf sputtering. The thin film pressure sensor with silicon oxide as a insulating layer showed a better nonlinearity and a lower hysteresis.

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A Telemetry Silicon Pressure Sensor of LC Resonance Type (LC공진을 이용한 원격측정용 압력센서의 제작 및 실험)

  • Kim, Hak-Jin;Kim, Soon-Young;Yang, Sang-Sik
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1872-1874
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    • 2001
  • This paper presents an implantable telemetry LC resonance-type pressure sensor to measure the cerebral ventricle pressure. The sensor consists of an inductor and a capacitor. The LC resonant circuit consists of the sensor and an external antenna coil that are coupled magnetically. The resonance frequency of the circuit decreases as the applied pressure increases the capacitance of the sensor. The sensor is designed in consideration of the biocompatibility and long lifetime for continuous monitoring of the ventricle pressure. The sensor is simple to fabricate and small in comparison with others reported previously. The inductor is fabricated by electroplating and the variable capacitor is constructed with a flexible p+ diaphragm. Also, the deflection of the diaphragm, the variation of the capacitance and the resonance frequency are analyzed and calculated.

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Design and Fabrication of Six-Degree of Freedom Piezoresistive Turbulent Water Flow Sensor

  • Dao, Dzung Viet;Toriyama, Toshiyuki;Wells, John;Sugiyama, Susumu
    • Journal of Sensor Science and Technology
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    • v.11 no.4
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    • pp.191-199
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    • 2002
  • This paper presents the design concept, theoretical investigation, and fabrication of a six-degree of freedom (6-DOF) turbulent flow micro sensor utilizing the piezoresistive effect in silicon. Unlike other flow sensors, which typically measure just one component of wall shear stress, the proposed sensor can independently detect six components of force and moment on a test particle in a turbulent flow. By combining conventional and four-terminal piezoresistors in Si (111), and arranging them suitably on the sensing area, the total number of piezoresistors used in this sensing chip is only eighteen, much fewer than the forty eight piezoresistors of the prior art piezoresistive 6-DOF force sensor.

Capacitance-type Alcohol Sensors using Porous Silicon Layer (다공질 실리콘 층을 이용한 정전용량형 알코올 센서)

  • Kim, Seong-Jeen
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.9
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    • pp.31-36
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    • 1999
  • A capacitance-type sensor using porous silicon layer is developed to measure aqueous alcohol concentration. Since alcohol, so called ethanol, is very permeable into the silicon wafer, it is often used to help chemical reaction when the silicon wafer is processed under some aqueous solution. In this work, the sensing property was measured for the alcohol concentration from zero to near 100 percent with two types of samples with porous silicon layer formed in 25 and 35% HF solution, respectively. Good reliability as well as fast response time and good linearity were shown over 10kHz and the measured capacitance was observed to be inverse to alcohol concentration due to the decrease of the whole dielectric constant in porous silicon layer.

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A study on amorphous silicon thin film for bolometer sensor (볼로미터 센서를 위한 비정질 실리콘 박막)

  • Kang, Tai-Young;Yang, Dae-Joon;Kim, Sang-Mo;Lim, Sung-Su;Lee, Hong-Ki;Kim, Kyoung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.238-239
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    • 2009
  • The amorphous silicon microbolometer array has been developed by the MEMS design and fabrication technology. Before the bolometer array for the image sensor being designed, the structure of unit cell and $16\times16$ array of it was simulated, designed and fabricated. The properties of bolometer have been measured as such that the TCR -3%/K.

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Silicon Prism-based NIR Spectrometer Utilizing MEMS Technology

  • Jung, Dong Geon;Son, Su Hee;Kwon, Sun Young;Lee, Jun Yeop;Kong, Seong Ho
    • Journal of Sensor Science and Technology
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    • v.26 no.2
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    • pp.91-95
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    • 2017
  • Recently, infrared (IR) spectrometers have been required in various fields such as environment, safety, mobile, automotive, and military. This IR dispersive sensor detection method of substances is widely used. In this study, we fabricated a silicon (Si) prism-based near infrared (NIR) spectrometer utilizing micro electro mechanical system (MEMS) technology. Si prism-based NIR spectrometer utilizing MEMS technology consists of upper, middle, and lower substrates. The upper substrate passes through the incident IR ray selectively. The middle substrate, acting as a prism, disperses and separates the incident IR beam. The lower substrate has an amorphous Si (a-Si)-based bolometer array to detect the IR spectrum. The fabricated Si prism-based NIR spectrometer utilizing MEMS technology has the advantage of a simple structure, easy fabrication steps, and a wide NIR region operating range.

Development of a Pressure Measurement System with the Parallel Structure (병렬구조의 압력측정 시스템 개발)

  • Yun, Eui-Jung;Kim, Jwa-Yeon;Lee, Kang-Won;Lee, Seok-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.4
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    • pp.328-333
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    • 2006
  • In this paper, we developed a pressure measurement apparatus with the parallel structure to improve the measurement efficiency of pressure sensors by reducing the measurement time of pressure. The developed system has two parallel positions for loading Silicon pressure sensor and has a dual valve structure. The semiconductor pressure sensors prepared by Copal Electronics were used to confirm the performance of the developed measurement system. Two stage differential amplifier circuit was employed to amplify the weak output signal and the amplified output signal was improved utilizing a low-pass filter. New apparatus shows the measurement time of pressure two times shorter than that of conventional one with the serial structure, while both structures show the similar linear output versus pressure characteristics.

Measurement of Velocity and Temperature Field at the Low Prand시 Number Melt Model of the CZ Crystal Growth

  • Kim, Min-Cheol;Lee, Sang-Ho;Yi, Kyung-Woo
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.06a
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    • pp.169-172
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    • 1998
  • A phyaical model of the Czochralski method for silicon single crystals is designed to measure the change of velocities and temperature profilles in the melt. Wood's metal(Bi 50%, Pb 26.7%, Sn 13.3%, Cd 10%, m.p. 70℃) is used to simulate the silicon melt in the crucible. To measure the local velocity change, electromagnetic probe is adopted as a velocity sensor. The output voltage of the sensor shows linear relationship to the velocity of the melt.

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Development of Three-dimensional Chamber-type Glucose Sensor Using Micromachining Technology (마이크로머시닝 기술을 이용한 3차원 마이크로 챔버형 글루코스 센서의 개발)

  • Kim Sung Ho;Kim Chang Kyo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.6 no.1
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    • pp.24-28
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    • 2005
  • A micromachined biochip with a three dimensional silicon chamber was developed for the construction of biosensors. Anisotropic etching was used fur the formation of the chamber on the p-type silicon wafer(100) and then was glued to the Pyrex glass bottom-substrate with pre-deposited platinum electrode. The electrochemical characterization of its Pt electrode and Ag/AgCl reference electrode was investigated.

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