• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.147-150
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• 2003

In this paper, We fabricated a high temperature pressure sensor using SBD(silicon- direct-bonding) wafer of $Si/SiO_2$/Si-sub structure. This sensor was very sensitive because the piezoresistor is fabricated by single crystal silicon of the first layer of SDB wafer. Also, it was possible to operate the sensor at high temperature over $120^{\circ}C$ which is the temperature limitation of general silicon sensor because the piezoresistor was dielectric isolation from silicon substrate using silicon dioxide of the second layer. The sensitivity of this sensor is very high as the measured result of D2200 shows $183.6\;{\mu}V/V{\cdot}kPa$. Also, the output characteristic of linearity was very good. This sensor was available at high temperature as $300^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.175-181
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• 2004

A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.369-373
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• 2013

In this paper, we developed contact type temperature sensor with single crystal silicon strip thermopile. This sensor consists of 15 p-type single crystal silicon strips, 17 n-types and contact electrodes on silicon dioxide silicon membrane. The result of electromotive force measuring showed very good characteristic as $15.18mV/^{\circ}C$ when temperature difference between the two ends of the thermopile occurs by applying thermal contact on the thermopile which was fabricated with silicon strip of $200{\mu}m$ length, $20{\mu}m$ width, $1{\mu}m$ thickness.

• Journal of Sensor Science and Technology
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• v.24 no.3
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• pp.194-201
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• 2015

The current sensor is used in industrial devices and power utilities. Core materials of these current sensors are divided into mainly two groups as silicon steel and fermalloy. Silicon steel has a wide saturation bandwidth but low sensitivity during low-current, whereas permalloy has a short saturation bandwidth but high sensitivity during low-current. In this paper, laminated silicon steel and permalloy by equal ratio is proposed to improve the linearity and saturation of current sensor. It is proved that the proposed core material has larger bandwidth than fermalloy as well as higher sensitivity than silicon steel. When comparing simulation results by FLUX 3D, the proposed method has also better performance than the previous core materials.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.305-310
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• 2013

In this paper, the pressure sensor usable in a high temperature, using a SDB(silicon-direct-bonding) wafer of Si/$SiO_2$/Si-sub structure was provided and studied the characteristic thereof. The pressure sensor produces a piezoresistor by using a single crystal silicon as a first layer of SDB wafer, to thus provide a prominent sensitivity, and dielectrically isolates the piezoresistor from a silicon substrate by using a silicon dioxide layer as a second layer thereof, to be thus usable even under the high temperature over $120^{\circ}C$ as a limited temperature of a general silicon sensor. The measured result for a pressure sensitivity of the pressure sensor has a characteristic of high sensitivity, and its tested result for an output of the sensor further has a very prominent linearity and hysteresis characteristic.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.676-680
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• 1999

To do breath alcohol measurement, a sensor is necessary that it can detect low alcohol gas concentration of 0.01% at least. In this work, a capacitance-type alcohol gas sensor using porous silicon layer is developed to measure low alcohol gas concentration. The sensor using porous silicon layer has some sensitivity at room temperature by very large effective surface area, but there is still much room for improvement. In this experiment, we measured the capacitance of the sensor under 254 nm UV light on the porous silicon layer, in which alcohol solution was kept in a flask at 25, 35, and $45^{\circ}C$ by a heater. As the result, the improvement of sensitivity by illuminating UV light was observed. The increasing rate of the capacitance was shown to be double more than those measured under UV-off state. It is supposed that UV light activates response of the oriental and interfacial polarizations which have slow relaxation time for AC field.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.76-79
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• 2018

In this paper, we developed a pressure monitoring system using silicon pressure sensor. The pressure monitoring system was developed on the basis of a microcontroller, and a self-developed silicon pressure sensor was applied. The pressure monitoring system outputs the current pressure value via UART communication. In addition, it includes a function of displaying by LED when the preset three-step pressure (low, medium, high pressure) is reached. The silicon pressure sensor used in the pressure monitoring system was set to 0 kPa, 10 kPa, 26 kPa, and the pressure monitoring system was evaluated because the measured maximum pressure was in the range of 100 kPa.

• Journal of Institute of Control, Robotics and Systems
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• v.12 no.1
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• pp.85-92
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• 2006

A new silicon micro flow sensor with multiple temperature sensing elements was proposed and fabricated in considering wide range flow velocity measuring device. Thermal mass flow sensor measures the asymmetry of temperature profile around the heater which is modulated by the fluid flow. A micro mass flow sensor was normally composed of a central heater and a pair of temperature sensing elements around it. A new 2-D wide range micro flow sensor structure with three pairs of temperature sensing elements and a central heater was proposed and numerically simulated by Finite Difference Formulation to confirm the feasibility of the wide flow range sensor structure. To confirm the simulation result, the new flow sensor was fabricated on silicon substrate and the basic flow sensing properties of the sensor were measured.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1391-1393
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• 1994

A silicon microbridge flow sensor has been developed. The heat transfer within silicon microbridge is modeled to predict the characteristics of the sensor. The flow sensor shows high sensitivity at small flow rate. This device is simple to fabricate, using standard IC and micromachining technology.