• 제목/요약/키워드: silicon on nothing

검색결과 5건 처리시간 0.018초

Performance Investigation of Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET for Low Volatge Digital Applications

  • Kumari, Vandana;Saxena, Manoj;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.622-634
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    • 2013
  • The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be observed that ISE-SON based inverter shows better performance in terms of Voltage Transfer Characteristics, noise margin, switching current, inverter gain and propagation delay. The reliability issues of the various devices in terms of supply voltage, temperature and channel length variation has also been studied in the present work. Logic circuits (such as NAND and NOR gate) and ring oscillator are also implemented using different architectures to illustrate the capabilities of ISE-SON architecture for high speed logic circuits as compared to other devices. Results also illustrates that ISE-SON is much more temperature resistant than SON and ISE MOSFET. Hence, ISE-SON enables more aggressive device scaling for low-voltage applications.

Design of silicon-on-nothing structure based on multi-physics analysis

  • Song, Jihwan;Zhang, Linan;Kim, Dongchoul
    • Multiscale and Multiphysics Mechanics
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    • 제1권3호
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    • pp.225-231
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    • 2016
  • The formation of silicon-on-nothing (SON) structure during an annealing process from the silicon substrate including the trench structures has been considered as an effective technique to construct the structure that has an empty space under the closed flat surface. Previous studies have demonstrated the mechanism of the formation of SON structure, which is based on the surface diffusion driven by the minimization of their surface energy. Also, it has been fragmentarily shown that the morphology of SON structure can be affected by the initial design of trench (e.g., size, number) and the annealing conditions (e.g., temperature, pressure). Based on the previous studies, here, we report a comprehensive study for the design of the cavity-embedded structure (i.e., SON structure). To do this, a dynamic model has been developed with the phase field approach. The simulation results represent that the morphology of SON structures could be detailedly designed, for example the position and thickness of cavity, the thickness of top and bottom layer, according to the design parameters. This study will give us an advantage in the effective design of SON structures.

P-형 실리콘에 형성된 정렬된 매크로 공극 (Ordered Macropores Prepared in p-Type Silicon)

  • 김재현;김강필;류홍근;서홍석;이정호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.241-241
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    • 2008
  • Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

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고밀도 $Cl_2/HBr$ 플라즈마에 의한 비도핑 $\alpha$-Si 식각시 나칭 현상 (Notching Effect in Etching of the Undoped $\alpha$-Si by using High Density $Cl_2/HBr$ Plasma)

  • 신성욱;김남훈;유석빈;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.10-13
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    • 2000
  • The notching effect in etching of un doped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma, First, in the region of small line width, the potential was increased as a result of ions in the exposed surface of oxide, and the incident ions between the small line width were deflected more wide range, therefore the depth of notching was shallow and wide, Second, in the region of large line width of gate, electrons were charged on the top of photoresist and the side of gate, a part of ions deflected, The deflected ions were locally charged positive on the side of gate, and then the potential difference was produced, therefore, ions stored up more at independent line than at dense line, and nothing became deeper by Br ion bombardment.

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꽃게 통발용 미끼 및 미끼통의 형광 특성 (Fluorescent characteristics of baits and bait cages for swimming crab Portunus trituberculatus pots)

  • 장호영;구재근;이근우;조봉곤;정병곤
    • 수산해양기술연구
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    • 제44권3호
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    • pp.174-183
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    • 2008
  • In order to develop the substitutive materials for natural baits of swimming crab pots, the fluorescent characteristics of the baits were analyzed, and the preference of fluorescent dyes were investigated by the mean entrapped catch number to the pots through the water tank experiments and fishing experiments. On the investigation of fluorescent characteristics by the 5 kinds of baits, mackerel, krill, manila clam, pig's fat and chicken's head which were used in substitutive baits for test in the UV long wave(365nm) area, it showed clear blue fluorescence in the skin of mackerel, shell of krill, manila clam and bill of chicken's head, and green fluorescence in the mackerel s muscle and internals, and yellow fluorescence in the pig's fat and chicken's head. On the investigation of fluorescent characteristics by the bait cages in the UV short wave(254nm) and long wave(365nm) area, it showed each green, red and blue fluorescence in the cylinderical or hexahedral red plastic bait cages which were painted each green, red and blue fluorescence dyes, but it showed yellowish green flourescence in the cylinderical or hexahedral red plastic bait cage which was painted yellow fluorescent dye. On the preference investigation of the fluorescent dyes of swimming crabs by the 5 kinds of the bait cages which were put the mackerel in the non-fluorescent red plastic cage($RF_N$), red, yellow, green and blue fluorescent plastic cages(RF, YF, GF, BF) each, nonfluorescent red plastic cage($RF_N$) was entrapped mean 2.0(6.7%), but blue fluorescent plastic cage(BF) was mean 5.0(16.7%) and it was more 2.5 times comparing to $RF_N$, and red fluorescent cage(RF) was same level and green fluorescent cage(GF) was 50% of catch number comparing to $RF_N$, and yellow fluorescent cage(YF) was entrapped nothing(F 46.324, P < 0.05). On the investigation of the entrapped catch number to the pots which were put the mackerel in the blue fluorescent hexahedral plastic cage(HP) and blue fluorescent silicon mackerel model cage(SM), HP was mean 3.4(11.3%) and it was a little more comparing to SM which was entrapped mean 3.2(10.7%)(t 0.775, P > 0.05). Fishing experiments on the preference investigation of swimming crabs by the pots which were put in the non-fluorescent red plastic cage($RF_N$) and blue fluorescent plastic cage(BF) were conducted 3 times. Mean catching number and weight of $RF_N$ were 71.7 ind.(18.3%) and 16.9kg(64.3%), and those of BF were 93.0 ind.(23.1%) and 19.8kg(64.5%), respectively.