• 한국표면공학회지
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• 제32권6호
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• pp.695-702
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• 1999

We have explored the factors affecting the resistivity of Cu (Mg) alloy, which was prepared by sputtering. The results show that the resistivity is a function of Mg content, annealing temperature, annealing time, and Cu-alloy thickness. Addition of Mg to copper increases the resistivity through solute scattering. In addition, increasing Mg content promotes the interfacial reaction between Mg and SiO$_2$ to produce the free silicon and the generated free silicon dissolves into copper, resulting in a significant increase of resistivity. Furthermore, increasing oxidation temperature rapidly decreases the resistivity at the initial stage of oxidation and then continues to increase the resistivity to the saturation value with increasing oxidation time. The saturation value depends on the residual Mg content and the thickness of the alloy. TEM and AES analyses reveal that dense, uniform MgO grows to the limiting thickness of about $150\AA$. However, interfacial MgO does not show the limiting thickness, instead continues to grow until Mg is completely exhausted. From these facts, we proposed the maximum available Mg content needed to from the dense MgO on the surface and suppress the excessive interfacial reaction.

• 한국결정성장학회지
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• 제18권6호
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• pp.232-236
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• 2008

최근 실리콘 원료의 부족에 따른 가격상승으로 인하여 99.9999% 이상의 순도를 지닌 폴리 실리콘을 더 저렴하게 제조하기 위한 연구가 활발히 진행되고 있다. 본 연구에서는 순도 99%의 금속급 실리콘(MG-Si)을 원료로 산처리와 일방향 응고를 통해 고순도로 정제하는 연구를 수행하였다. MG-Si 럼프를 플레너터리 밀로 분쇄한 후 HCl/$HNO_3$/HF 산 수용액에서 처리하였다. 그 결과 Al, Fe, Ca, Mn 등과 같은 금속 불순물들의 실리콘 내 함량이 크게 감소하면서 실리콘의 순도는 99.995%까지 향상되었다. 정제된 실리콘 분말을 성형한 후 HEM로를 이용하여 용융시킨 뒤, 일방향 응고를 통하여 잉곳을 제조하였다. 성장시킨 다결정 실리콘 잉곳은 $0.3{\Omega}{\cdot}cm$의 비저항과 $3.8{\mu}{\cdot}sec$의 열 운반자 소멸시간(minority carrier life time)을 나타내었다.

• 한국세라믹학회지
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• 제20권3호
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• pp.211-216
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• 1983

This work aims at characterizing silicon grains and its compacts. In order to remove iron silicon grains were washed with 5N hydrochloride at 60-7$0^{\circ}C$ for 170 hrs, and then followed the chemical analysis by atomic absorption spectrophotometer X-ray diffraction analysis SEM observation and specific surface area determination by B. E. T. Mixtures of graded silicon particles with two or three different sizes were made into packings by mechanical vibration. The mixtures were used to make compacts with 10 mm in diameter and 70mm in length by isostatically pressing at 1, 208 kg/$cm^2$ (20 kpsi) and 4, 255kg/$cm^2$ (60 kpsi) respectively. Bulk densities of packings and compacts were measured. A slip made of magnesium nitrate solution and fine silicon particles was spray-dried and then decomposed at 30$0^{\circ}C$ for the purpose of coating the uniform layer of magnesium oxide on the surface of particles. The results obtained are as follows: (1) About two thirds of iron content could be removed from silicon by washing silicon powders with hydrochloride. (2) Uniform layer of magnesium oxide on the surface of silicon could be prepared by spray-drying suspension and by decomposing it. (3) B. E. T. specific surface area of fine silicon particles was 2, 826.753$m^3$/kg. (4) In the binary system with two sizes of 40-53$\mu\textrm{m}$ particles and <10$\mu\textrm{m}$ particles the maximum bulk density of packing was 55% of theoretical value and that of compacts made at the pressure of 4, 255 kg./$cm^2$ (60 kpsi) was 73% of theoretical value. (5) In the ternary system with three sizes the maximum bulk density of packing was 1.43 g/$cm^3$and that of compacts was 1.80g/$cm^3$which is equivalent to 77.6% of theoretical value. The composition of the closest compact was consisted of 50% of 40-53$\mu\textrm{m}$ particles 20% of 10-30$\mu\textrm{m}$ particles and 30% of <10$\mu\textrm{m}$ parti-cles.

• 한국세라믹학회지
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• 제51권2호
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• pp.121-126
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• 2014

The influence of a liquid medium duringa wet-milling process in the grinding and oxidation of silicon powder was investigated. Distilled water, dehydrated ethanol and diethylene glycol were used as the liquid media. The applied grinding times were 0.5, 3, and 12 h. Ground silicon powder samples were characterized by means of aparticle size analysis, scanning electron microscopy(SEM), x-ray powder diffraction (XRD), FT-IR spectroscopy and by a chemical composition analysis. From the results of the characterization process, we found that diethylene glycol is the most efficient liquid medium when silicon powder is ground using a wet-milling process. The FT-IR results show that the Si-O band intensity in an unground silicon powder is quite strongbecause oxygen becomes incorporated with silicon to form $SiO_2$ in air. By applying deionized water as a liquid medium for the grinding of silicon, the $SiO_2$ content increased from 4.12% to 31.7%. However, in the cases of dehydrated ethanol and diethylene glycol, it was found that the $SiO_2$ contents after grinding only changed insignificantly, from 4.12% to 5.91% and 5.28%, respectively.

• 한국세라믹학회지
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• 제44권12호
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• pp.747-750
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• 2007

The thermal conductivities of nano-sized fumed silica-based insulation media were investigated by varying a mean particle size of the silicon carbide opacifiers and ceramic fiber content. Opacifying effect of ceramic fiber and silicon carbide powders was discussed in terms of their content and the mean particle size of them. As the fiber contents increased from 10 wt% to 30 wt% in a material, its thermal conductivity at temperatures of about $620^{\circ}C$ decreased from 0.171 $Wm^{-1}K^{-1}$ to 0.121 $Wm^{-1}K^{-1}$. Meanwhile, the thermal conductivity at temperatures of about $625^{\circ}C$ decreased from 0.128 $Wm^{-1}K^{-1}$ to 0.092 $Wm^{-l}K^{-1}$ as the mean SiC particle size decreased from $31{\mu}m$ to $10{\mu}m$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.785-789
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• 2005

Low temperature deposition of silicon and silicon nitride films by catalytic CVD technique was studied for application to thin film transistors on plastic substrates for flexible AMOLEDs. The substrate temperature initially held at room temperature, and was controlled successfully below $150^{\circ}C$ during the entire deposition process. Amorphous silicon films having good adhesion, good surface morphology and sufficiently low content of atomic hydrogen were obtained and could be successfully crystallized using excimer laser without a prior dehydrogenation step. $SiN_x$ films showed a good refractive index, a high deposition rate, a moderate breakdown field and a dielectric constant. The Cat-CVD silicon and silicon nitride films can be good candidates for fabricating thin films transistors on plastic substrates to drive active-matrix organic light emitting display.

• 한국세라믹학회지
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• 제49권4호
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• pp.325-327
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• 2012

Europium-doped $LaSi_3N_5$ phosphor was synthesized from LaSi/Si/$Si_3N_4/Eu_2O_3$ mixture by nitridation at $1390^{\circ}C$ and additional annealing at $1650^{\circ}C$ for 4 h. The phosphor shows emissions in the green light region with a maximum at 560 nm. With increasing europium content in the general formula $La_{1-z}Eu_zSi_3N_{5-z}O_{1.5z}$ from z = 0.01 to 0.06 there was a maximum emission for z = 0.04 followed by concentration quenching for the highest europium content (z = 0.06).

• 한국결정성장학회지
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• 제10권2호
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• pp.91-95
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• 2000

8인치 쵸크랄스키 실리콘 단결성 성장에 있어서, 계면에서의 온도기울기, 산소, 농도 및, 반경방향의 산소농도 분포에 미치는 아르곤 가스 유동의 영향을 조사하였다. 아르곤의 유입량을 증가시킴에 따라 계면 근처 결정내 온도기울기가 증가하였으며. 결정내 산소농도는 감소하였다. 한편, 반경방향의 산소농도 균일성은 악화됨이 관찰되었다. 실험 결과를 종합하여 볼 때, 아르곤 유동이 산소 농도 및 균일 분포성 등의 결정 특성에 중요한 영향을 미치는 성장 공정변수임을 확인할 수 있었다.

• 한국세라믹학회지
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• 제28권12호
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• pp.943-952
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• 1991

Lead zirconate titanate(PZT) powders and thin films were prepared from an alkoxide-based solution by sol-gel method. Gelation of synthesized complex solutions, pyrolysis and crystallization behaviors of the dried powder were studied in accordance with a water content and a catalyst. PZT thin films were formed by spin-casting method on silicon and platinum substrates, and characterized. Ester produced from the reactions was completely removed when drying of the gel was finished. Pyrolysis property of the dried PZT gels were changed in order water content, class of catalyst, and quantity of catalyst. Crystalline Pb phase was transiently formed near 250$^{\circ}C$. Basic catalyst is good additive for a formation of perovskite phase in the films, and acidic catalyst for a densified film structure. By the analysis of RBS, Pb element in the PZT films were diffused into silicon substrate, and the pores, may be produced due to local densification around some grains in the films, make an origin of fault in microstructure when holding time goes to be longer at 700$^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.123-123
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• 1999

Amorphous hydrogenated silicon carbide (a-SiC:H) films were deposited at the temperature of 40$0^{\circ}C$ using plasma enhanced chemical vapor deposition. The a-SiC:H films were characterized by x-ray photoelectron spectroscopy (XPS) and nanoindentation method. By increasing the plasma power from 20W to 160W, the oxygen content of the a-SiC:H films were observed to decrease from 12.1% to 4.4%. On the other hand, the plasma power did not affect the ratio of carbon to silicon in our experiment where the 1, 3-disilabutane was used as the precursor. Microhardness of the films was observed to increase as the plasma power increased, while the elastic modulus was observed to gave a maximum value at the plasma power of 80W. Microhardness of the film is thought to be strongly affected by the content of adventitious oxygen in the film and it is concluded that the hardness of the film can be improved by increasing the plasma power.