• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.59-64
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• 2000

Silicon nitride ceramics with various α/β phase ratio were fabricated by controlling sintering conditions of PECS process. Mechanical properties varied systematically with α/β ratio. Young's modulus and hardness increased with α-Si₃N₄ volume fraction, and fracture strength and toughness increased with β-Si₃N₄ content.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.328-332
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• 2012

Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.166-171
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• 2016

Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.135-144
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• 2000

Hot-dip galvannealed sheet (GA) with high strength of $45kg/mm^2$ in tensile strength, has developed for automotive applications. However, for a successful application, the powdering behaviour of GA must be minimized. The powdering of galvannealed coatings was reduced as the silicon content in the steel increased. Rapid heating and rapid cooling rate during the galvannealing process improved the powdering resistance due to the suppression of not only the ξ phase, but also the $ \Gamma _1$, phase. An analysis of the Fe-Zn alloy phases and its relation to the powdering behaviour are discussed with SEM micrographs.

• Analytical Science and Technology
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• v.15 no.1
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• pp.87-90
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• 2002

The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 ％ in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.542-547
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• 2005

Keys to the attainment of tailored properties in SiC ceramics are microstructure control and judicious selection of the sintering additives. In this study, three different strategies for controlling microstructure of liquid-phase-sintered SiC ceramics (LPS-SiC) have been suggested: control of the initial $\alpha-SiC$ content in the starting powder, a seeding technique, and a post-sintering heat treatment. The strategies suggested offer substantial flexibility for producing toughened SiC ceramics whereby grain size, grain size distribution, and aspect ratio can be effectively controlled. The present results suggest that the proposed strategies are suitable for the manufacture of toughened SiC ceramics with improved toughness.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1588-1598
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• 1994

The SiC/MoSi2 composite materials were fabricated by infiltrating the mixture of molybdenum disilicide and metal silicon(MoSi2+Si=100) to a porous compact of silicon carbide and graphite under the vacuum atmosphere of 10-1 torr. The specimen were oxidized in dry air under 1 atm at 130$0^{\circ}C$~150$0^{\circ}C$ for 240 hours. The oxidation behavior was evaluated by the weight gain and loss per unit area of the oxidized samples. Also, SEM and XRD analysis of the oxidized surface of the samples were carried out. With increasing the MoSi2 content and oxidation temperature, the passive oxidation was found. The trend of weight gain of all samples was followed the parabolic rate law with the formation of a protective layer of cristobalite on the surface.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.3
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• pp.157-163
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• 2005

Effects of refinement of primary Si and residual stress on the mechanical properties of Aluminum B.390 alloy have been examined. Calcium was found to have an effect on the size of primary silicon particles. Primary silicon particle was refined as Ca content decreased. Refinement of primary Si particles led to an improvement in mechanical properties of the alloy; increase of elongation was prominent, above all. By the increase of compressive residual stress in the matrix alloy, tensile strength increased but elongation decreased.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.273-275
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• 1997

We fabricated the conventional silicon tips coated with a diamond-like carbon (DLC) film. The DLC films are prepared by the filtered cathodic vacuum arc (FCVA) technique. With increasing nitrogen content in DLC film, the work function($\phi$) and the turn-on voltage decrease and the emission current increases. This phenomenon is due to the fact that the Fermi-level moves to the conduction band by increasing nitrogen doping concentration. We have tested on the stability of the DLC film coated silicon tip during 2 hours at 500V.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.683-687
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• 1997

The purpose of this work is to develop a highly reliable solar cell based on the diamond-like carbon(DLC)/silicon heterojunction. Thin films of DLC have been deposited by employing both filtered cathodic vacuum arc(FCVA) and magnetron plasma-enhanced chemical vapor deposition(m-PECVD) systems. Structural, electrical, and optical properties of DLC films deposited are systematically analyzed as a function of deposition conditions, such as magnetic field, substrate bias voltage, gas pressure, and nitrogen content. The I-V measurement has been used to elucidate the mechanism responsible for the conduction process in the DLC/Si junction. Photoresponse characteristics of the junction are measured and its reliability against temperature and light stresses is also analyzed.