• 한국세라믹학회지
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• 제48권5호
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• pp.373-378
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• 2011

The composite added with surface-coated chopped carbon fiber showed the microstructure of a 3 dimensional discretional arrangements. The fiber reinforced reaction bonded silicon carbide composite, containing the 50 vol% carbon fiber, showed the porosity of < 1 vol%, 3-point bending strength value of 250MPa and fracture toughness of 4.5 $MPa{\cdot}m^{1/2}$. As the content of carbon fiber was increased from 0 vol% to 50 vol% in the composite, fracture strength was decreased due to the increase of carbon fiber, which has a less strength than SiC and molten Si. On the other hand, the fracture toughness was increased with increasing the amount of carbon fiber. According to the polished microstructure, carbon fiber was shown to have a random 3 dimensional arrangement. Moreover, the fiber pull-out phenomenon was observed with the fractured surface, which can explain the increased fracture toughness of the composite containing high content of carbon fiber.

• 한국세라믹학회지
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• 제49권6호
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• pp.625-630
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• 2012

Highly porous silicon carbide (SiC) ceramics were fabricated from polysiloxane, SiC and carbon black fillers, AlN-$Y_2O_3$ additives, and poly (ether-co-octene) (PEOc) and expandable microsphere templates. Powder mixtures with a fixed PEOc content (30 wt%) and varying SiC filler contents from 0-21 wt% were compression-molded. During the pyrolysis process, the polysiloxane was converted to SiOC, the PEOc generated a considerable degree of interconnected porosity, and the expandable microspheres generated fine cells. The polysiloxane-derived SiOC and carbon black reacted and synthesized nano-sized SiC with a carbothermal reduction during a heat-treatment. Subsequent sintering of the compacts in a nitrogen atmosphere produced highly porous SiC ceramics with porosities ranging from 78 % to 82 % and a flexura lstrength of up to ~7 MPa.

• 대한금속재료학회지
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• 제47권7호
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• pp.423-432
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• 2009

In the galvanizing coating process, the effects of the silicon content on the coatability and wettability of molten zinc were investigated on Dual-Phase High Strength Steels (DP-HSS) with various Si contents using the galvanizing simulator and dynamic reactive wetting systems. DP-HSS showed good coatability and a well-developed inhibition layer in the range of Si content below 0.5 wt%. Good coatability was the results of the mixed oxide $Mn_{2}SiO_{4}$, being formed by the selective oxidation on the surface, with a low contact angle in molten zinc and a large fraction of oxide free surface that provided a sufficient site for the molten zinc to wet and react with the substrate. On the other hand, with more than 0.5 wt%, DP-HSS exhibited poor coatability and an irregularly developed inhibition layer. The poor coatability was due to the poor wettability that resulted from the development of network-type layers of amorphous ${SiO}_{2}$, leading to a high contact angle in molten zinc, on the surface.

• 한국세라믹학회지
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• 제49권4호
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• pp.363-368
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• 2012

Nitriding and post-sintering behavior of powder mixture compacts were investigated. As mixture compacts are different from simple Si compacts, the fabrication of a sintered body with a mixture composition has engineering implications. In this research, in specimens without a pore former, the extent of nitridation increased with $Si_3N_4$ content, while the highest extent of nitridation was measured in $Si_3N_4$-free composition when a pore former was added. Large pores made from the thermal decomposition of the pore former collapsed, and they were filled with a reaction product, reaction-bonded silicon nitride (RBSN) in the $Si_3N_4$-free specimen. On the other hand, pores from the decomposed pore former were retained in the $Si_3N_4$-added specimen. Introduction of small $Si_3N_4$ particles ($d_{50}=0.3{\mu}m$) into a powder compact consisting of large silicon particles ($d_{50}=7{\mu}m$) promoted close packing in the green body compact, and resulted in a stable strut structure after decomposition of the pore former. The local packing density of the strut structure depends on silicon to $Si_3N_4$ size ratio and affected both nitriding reaction kinetics and microstructure in the post-sintered body.

• Journal of Advanced Marine Engineering and Technology
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• 제33권7호
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• pp.1026-1033
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• 2009

Fine ceramics have high strength, excellent wear resistance, chemical stability and high strength at high temperature and are receiving attention in various fields such as construction, engineering, aerospace and marine science. Finish machining process is required to obtain precise ceramics components because sintering process necessary for obtaining high strength and high quality ceramics reduces the dimensions of components and precision of shape. But high strength and brittleness of ceramics materials cause difficulty in processing. So a process for obtaining wanted dimensions is studying using high temperature which makes ceramics softened and thermal affected recently. Laser beam is a very useful optical device for these kinds of processes. Laser process such as laser cutting, laser machining, laser heat treatment and laser-assisted machining(LAM) is researching to manufacture practical ceramics components using intense laser source which can cause local softening and damage of workpiece. In this paper, microstructural and mechanical properties of silicon nitride heated are studied as a basic study for researching of ceramics process by laser beam. The surface variation of HIP and SSN-silicon nitride was analyzed with SEM and EDS. A processing at $1,300^{\circ}C$ or above causes N element to combine into $N_2$ gas and the gas busts from surface. These phenomena make bloat, craters and heat defects on the surface of silicon nitride. Also, oxygen content is largely increased to oxidize the surface and it causes changing of phases and reducing of hardness of surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.83-87
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• 2002

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride ($SiN_X$) is widely used as a gate dielectric material for the hydrogenated amorphous silicon(a-Si:H) thin film transistors (TFT's). We investigated $SiN_X$ films were deposited PECVD at low temperature ($300^{\circ}C$). The reaction gases were used pure nitrogen and a helium diluted of silane gas(20% $SiH_4$, 80% He). Experimental investigations were carried out with the variation of $N_2/SiH_4$ flow ratios from 3 to 50 and the rf power of 200 W. This article presents the $SiN_X$ gate dielectric studies in terms of deposition rate, hydrogen content, etch rate and C-V, leakage current density characteristics for the gate dielectric layer of thin film transistor applications. Electrical properties were analyzed through high frequency (1MHz) C-V and current-voltage (I-V) measurements. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment.

• 융합정보논문지
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• 제12권4호
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• pp.338-344
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• 2022

리튬이온전지의 음극소재 연구에서 실리콘 기반의 음극 활물질 개발이 필수적이며, 탄소기반의 실리콘-탄소 복합소재의 음극 적용연구가 활발히 진행되고 있다. 다른 한편으로 반도체와 태양광전지 산업에서 폐기물로 버려지는 실리콘 자원이 증가하여 환경적 문제를 일으키기도 한다. 본 연구에서는 리튬이온전지 음극소재로서 재활용된 실리콘을 이용하여 탄소와 복합화를 이루었으며, 실리콘 음극소재의 높은 용량 유지 특성 및 사이클 안정성 향상을 위하여 재활용된 실리콘과 피치의 함량을 조절하여 복합화의 최적화 조건을 확립하였다. 실리콘 : 피치의 질량비를 1 : 1 과 2 : 1을 가진 복합체를 간단한 자가조립 방법으로 복합화 하였으며, 석유계 피치로 코팅하여 제조된 음극소재의 전기화학적 특성을 비교 조사하는 연구를 수행하였다. 제조된 실리콘-탄소 복합소재는 충·방전 동안 발생되는 실리콘의 구조적 파괴를 방지하는 방법으로 우수한 초기용량과 사이클 안정성을 달성하였으며, 재활용 실리콘의 전극소재로서의 가능성을 확인하였다.

• 원예과학기술지
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• 제32권2호
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• pp.142-148
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• 2014

Effect of silicon (Si) nutrition on growth and temperature stress tolerance of Nephrolepis exaltata 'Corditas' grown in a soilless substrate was examined. In vitro-grown acclimatized plantlets were transplanted into the pots containing a coir-based substrate. A nutrient solution containing 0, 50, or $100mg{\cdot}L^{-1}$ Si was supplied through a drip-irrigation system. After 5 months of cultiv ation, S i-treated and -untreated p lants were grown at 10, 25, or $40{\pm}1^{\circ}C$ under a 12 h photoperiod with $530{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ PPFD and 60% RH. After 7 days, chlorophyll content and chlorophyll fluorescence parameters were measured. Silicon nutrition had a negative effect on growth characteristics of N. exaltata 'Corditas'. However, Si-treated plants had more tolerance to temperature stress than the control plants. The Fv/Fm value was not significantly different when the plants were exposed to $25^{\circ}C$. However, significant difference in Fv/Fm was recorded when plants were exposed to 10 or $40^{\circ}C$. Thus, Fv/Fm could be used as an indicator of low and high temperature tolerance in ferns. The present study also suggests that application of Si may be used to enhance temperature tolerance of ferns.

• 자원리싸이클링
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• 제21권3호
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• pp.21-27
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• 2012

이전의 연구에서는 $Mn_3O_4$ 분진으로부터 고순도 훼로망간를 얻기 위해, Al 테르밋법이 검토되었다. 그 결과는 Mn 함유율이 약 93% 이상이고, KS D3712 규격 이하의 낮은 C, P, S의 불순물을 함유한 고순도 페로망간을 얻을 수 있음 보여주었다. 본 연구에서는 제조 코스트가 Al 분말보다 저렴한 Si 분말이 $Mn_3O_4$ 분진의 테르밋 반응법의 환원제로 검토되었다. 그 결과 환원제로 Si 분말을 단독으로 첨가할 경우는 착화가 불안정하여 테르밋 반응이 일어나지 않았으나, 환원제로 Si 분말과 Al 분말을 동시에 첨가할 경우는 C, P, S의 불순물 함유율이 매우 낮은 고순도 페로망간을 얻을 수 있었다.

• 한국공작기계학회논문집
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• 제16권6호
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• pp.212-216
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• 2007

Although DLC coatings have good tribological properties, these are dependent on the deposition method, property of contact surface, and test condition. Si-DLC/DLC coatings with various Si content were deposited on Si substrates and tested using a reciprocating friction tester against steel balls. The results revealed that the tribological behavior of Si-DLC/DLC coatings was dependent on the Si content. The formation of transfer film and wear particles on the contact surface was greatly influenced by the Si content in DLC coatings. In particular, silicon oxide transfer film formed by tribochemical reaction contributed to reduce wear and friction.