• 한국해양학회지
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• 제5권1호
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• pp.14-29
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• 1970

김의 성장과 품질에 대한 환경수질의 중요성은 다시 말할 필요가 없다 김 양식기에 있어서의 환경수질의 변동을 보기 위해 저자의 한 사람은 섬진강 및 낙동강 하구 김밭에 대해 이미 조사한 바 있거니와 이번에는 우리나라 유수의 김 생산지인 완도군하 김밭의 수질을 전보와 같은 방법으로 조사하였다. 조사지점으로서는 완도군 에서대체로 대표적 김밭이라 볼 수 있는 두 지점을 선정하여 1968년 10월부터 1969년 2월까지 매월 대조일에서의 수질변동을 조수의 일조기에 걸쳐 1시간마다 각 성분량을 측정하므로써 조사하였다.

• 열처리공학회지
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• 제16권5호
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• pp.260-266
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• 2003

In order to study the interfacial reaction between Nb thin sheet and Fe-C-(Si) alloy with different Chemical compositions, they were cast-bonded. The growth of carbide layer formed at the interface after isothermal heat treatment at 1173K, 1223K, 1273K and 1323K for various times was investigated. The carbide formed at the interface was NbC and the thickness of NbC layer was increased linearly in proportional to the heat treating time. Therefore, It was found that the growth of NbC layer was controlled by the interfacial reaction. The growth rate constant of NbC layer was slightly increased with increase of carbon content when the silicon content is similar in the cast irons. However, as silicon content increases with no great difference in carbon content, the growth of NbC layer was greatly retarded. The calculated activation energy for the growth of NbC layer was varied in the range of 447.4~549.3 kJ/moI with the compositions of cast irons.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.38.1-38.1
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• 2009

Plasma etching is an essential process for electronic device industries and the particulate contamination during plasma etching has been interested as a big issue for the yield of productivity. The oxynitride glasses have a merit to prevent particulate contamination due to their amorphous structure and plasma etching resistance. The YSiAlON oxynitride glasses with increasing nitrogen content were manufactured. Each oxynitride glasses were fluorine-plasma etched and their plasma etching rate and surface roughness were compared with reference materials such as sapphire, alumina and quartz. The reinforcement mechanism of plasma etching resistance of the YSiAlON glasses studied by depth profiling at plasma etched surface using electron spectroscopy for chemical analysis. The plasma etching rate decreased with nitrogen content and there was no selective etching at the plasma etched surface of the oxynitride glasses. The concentration of silicon was very low due to the generation of SiF4 very volatile byproduct and the concentration of aluminum and yttrium was relatively constant. The elimination of silicon atoms during plasma etching was reduced with increasing nitrogen content because the content of the nitrogen was constant. And besides, the concentration of oxygen was very low on the plasma etched surface. From the study, the plasma etching resistance of the glasses may be improved by the generation of nitrogen related structural groups and those are proved by chemical composition analysis at plasma etched surface of the YSiAlON oxynitride glasses.

• 한국재료학회지
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• 제19권2호
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• pp.102-107
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• 2009

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and $300^{\circ}C$ using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at $300^{\circ}C$, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below $300^{\circ}C$. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at $300^{\circ}C$ was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.299-303
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• 1991

A lamp heated LPCVD equipment has been made. Wafer is heated by an array of fifteen tungsten halogen lamps above the front side of a wafer and pyrometer views the back side of the wafer through $CaF_2$ window. Reactor which consisits of a quartz window and a water cooled-stainless steel plate can be evacuated to $5{\times}10^{-3}$ torr with a rotary vane pump. By pyrolysis of $SiH_4$ at about $600^{\circ}C$, polysilicon has been formed on the silicon dioxide film. The measured results show that thickness nonuniformity is 15% and temperature nonuniformity is 1.1%. Because activation energy of pyrolysis of $SiH_4$ is very high, about 1.8eV, small temperature variation will induce large thickness nonuniformity. The main cause of temperature nonuniformity is unsymmetry of lamp power and an unbalanced cooling structure. Charls & Evans' SIMS result shows that the oxygen content in the deposited polysilicon is comparable to that of silicon substrate but carbon content is ten times higher.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1116-1118
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• 2005

We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures ($<150^{\circ}C$). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as $70\;mJ/cm^2$, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

• 한국주조공학회지
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• 제31권3호
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• pp.137-144
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• 2011

The effects of thickness, base element and inoculants on the number of eutectic cells and chill depth of gray cast iron plate casting were investigated. Meanwhile the number of eutectic cells increased by inoculation, chill depth decreased. The former decreased and the latter increased by holding the melt at the temperature range between 1,450 and $1,500^{\circ}C$. The former was more for the thinner casting with the thickness of 5 mm than the other. The result of thermal analysis coincided well with the change of macrostructure. The former increased and the latter decreased with the increased contents of carbon, silicon and the silicon content by inoculation. The former decreased and the latter increased with increased manganese content. The performance of the Superseed Extra was the best among 5 inoculants.

• Bulletin of the Korean Chemical Society
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• 제29권2호
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• pp.309-312
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• 2008

Two different anode composite materials comprising of Fe, Cu and Si prepared using high energy ball milling (HEBM) were explored for their capacity and cycling behaviors. Prepared powder composites in the ratio Cu:Fe:Si = 1:1:2.5 and 1:1:3.5 were characterized through X-Ray diffraction (XRD) and scanning electron microscope (SEM). Nevertheless, the XRD shows absence of any new alloy/compound formation upon ball milling, the elements present in Cu(1)Fe(1)Si(2.5)/Graphite composite along with insito generated Li2O demonstrate a superior anodic behavior and delivers a reversible capacity of 340 mAh/g with a high coulombic efficiency (98%). The higher silicon content Cu(1)Fe(1)Si(3.5) along with graphite could not sustain capacity with cycling possibly due to ineffective buffer action of the anode constituents.

• 한국주조공학회지
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• 제32권6호
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• pp.261-268
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• 2012

The effects of thickness, base element and additive to inoculant on the number of eutectic cells and chill depth of thin-section gray cast iron were investigated. Meanwhile the number of eutectic cells increased by inoculation, chill depth decreased. The former decreased and the latter increased by holding the melt at the temperature range between 1,450 and $1,500^{\circ}C$. The former was more for the thinner casting with the thickness of 5 mm than the other. The result of thermal analysis coincided well with the change of macrostructure. The former increased and the latter decreased with the increased contents of carbon, silicon and the silicon content by inoculation. The former decreased and the latter increased with increased manganese content. The number of eutectic cells decreased as the amounts of rare earth and the bismuth added to this inoculant increased. With the addition of sulfur of 0.10 wt% of the weight of this inoculant, the maximum number of eutectic cells was obtained.

• The Korean Journal of Ceramics
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• 제5권2호
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• pp.178-182
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• 1999

Simple binary $Na_2S-SiO_2$ oxysulfide glasses were prepared by a conventional melt-quench method in order to investigate the role of sulfur in glass structure and the electronic state. By X-ray photoelectron spectroscopy(XPS) measurement, S2p binding energy of the glass was observed at approximately 161eV which was close to that of ionic $S^{2-}$. The coordinating state around silicon atoms were investigated by ${29}^Si$ MAS-NMR measurement. The chemical shift observed from NMR supported that sulfur atom was joined to a silicon atom by substituting for an oxygen atom and was present as a non-bridging sulfide ion in low alkali content. On the other hand, it could be presumed that a portion of sulfur anions existed in an isolated state from the glass-network frame at high alkali content. The state of these sulfurs was also studied by Raman spectroscopy in detail.