• 한국세라믹학회지
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• 제49권6호
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

• Journal of Power Electronics
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• 제19권4호
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• pp.1054-1067
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• 2019

This paper systematically investigates the influence of device parameters spread on the current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parameters spread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested under the same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore, comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variations of the device parameters. Based on the concept of the control variable method, the influence of each device parameter on the steady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, some screening suggestions of devices or chips before parallel-connection are provided in terms of different applications and different driver configurations.

• 전기전자학회논문지
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• 제26권4호
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• pp.671-680
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• 2022

본 논문에서는 현재 출시되어 있는 전기차의 구동모터 사양을 대부분 포괄하는 200kW급 구동용 모터드라이버를 개발하였다. 고효율ㆍ고전력밀도를 달성하기 위해 기존 전력반도체(Insulated-gate bipolar transistor, IGBT)대신에 차세대 전력반도체(Silicon carbide, SiC)를 적용하였으며 SiC를 최적사용하기 위해 하드웨어에 대한 분석을 통해, 예상되는 효율 및 방열특성을 구하여 최적 설계를 하였다. 전기차 구동모터에 대부분 활용되는 매입형 영구자석 동기모터(Interior permanent-magnet synchronous machine, IPMSM)를 위한 벡터 제어 알고리즘을 DSP를 활용하여 구현하였다. 본 논문에서는 SiC기반 전기차 구동용 모터드라이버 시작품을 설계ㆍ제작하였으며 실험을 통해 성능을 검증하였다.

• 한국세라믹학회지
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• 제55권3호
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.193-193
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• 2011

Strong adhesion of a silicon carbide (SiC) coating to a WC-Co substrate was achieved through an ion beam mixing technique and the corrosion resistance of the SiC coated WC-Co was investigated by means of a potentiodynamic electrochemical test. In a 1 M NaOH solution, the corrosion current density of SiC-coated WC-Co after heat treatment at 500$^{\circ}C$ was about 50 times lower than that for the as-received WC-Co. In addition, the corrosion resistance systematically increases with increasing the SiC coating thickness. On the other hand, for a 0.5 M H2SO4 solution, the corrosion current density for SiC-coated WC-Co was about 3 times lower than that for the as-received WC-Co. We discuss the physical reasons for the changes in the corrosion current density with the different electrolytes.

• 한국결정성장학회지
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• 제30권5호
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• pp.163-167
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• 2020

본 연구에서는 PVT(Physical Vapor Transport) 방법을 이용하여 반도체 식각 공정용 소재로 사용되는 링 모양의 SiC(Silicon carbide) 다결정을 제조하였다. 흑연 도가니 내부에 원기둥 모양의 흑연 구조물을 배치하여 PVT법에 의한 링 모양의 SiC 다결정을 성장시켰다. 성장된 결정은 Raman 및 UVF(Ultra Violet Fluorescence) 분석을 이용하여 결정의 상분석을 하였고, SEM(Scanning Electron Microscope), EDS(Energy Dispersive Spectroscopy) 분석을 통해 미세조직 및 성분을 확인하였다. PVT 성장 초기의 온도변화를 통하여 SiC 다결정의 결정립 크기와 성장 속도를 조절할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.352-352
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• 2010

Silicon Carbide (SiC) power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this paper, we report the effect of the P-base doping concentration ($N_{PBASE}$) on the transient characteristics of 4H-SiC DMOSFETs. By reducing $N_{PBASE}$, switching time also decreases, primarily due to the lowered channel resistance. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimization of superior switching performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.13-16
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• 2001

반도체 동작시에 파워 손실을 최소화하는 것은 2000년대의 에너지, 산업전자, 정보통신 산업분야에서의 가장 주요한 요구 사항중의 하나이다. 실리콘계 반도체 소자들은 완전히 새로운 구동기구의 소자가 개발되지 않는 한, 실리콘 재료의 낮은 열 전도율이나 낮은 절연파괴전계와 같은 물리적 특성한계 때문에 이러한 요구를 만족시키는 것이 불가능한 실정이다. 따라서 21세기를 위한 대안으로 고열전도율의 WBG(Wide Band-Gap) 물질 그 중에서도 탄화규소(SiC) 반도체가 제시되고 있다. SiC 반도체는 실리콘에 비하여 밴드 갭(band gap: E$_{g}$)이 높을 뿐만이 아니라 절연파괴강도(E$_{B}$)가 한 자릿수 이상 그리고 전자의 포화 drift 속도, v$_{s}$ 및 열전도도 k가 3배 가량 크다. 따라서 SiC는 고온 동작 내지는 고내압, 대전류, 저손실 반도체를 제작하는데 아주 유리하다. 본고에서는 응용성이 넓고, 단결정 제조가 비교적 용이한 SiC 반도체의 기술현황 에 대하여 살펴보고자 한다.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2004년도 학술대회지
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• pp.337-341
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• 2004

Engineering ceramics have superior heat resistance, corrosion resistance, and wear resistance. Consequently, these art significant candidates for hot-section structural components of heat engine and the inner containment of nuclear fusion reactor. Besides, some of them have the ability to heal cracks and great benefit can be anticipated with great benefit the structural engineering field. Especially, law fracture toughness of ceramics supplement with self-healing ability. In the present study, we have been noticed some practically important points for the healing behavior of silicon nitride, alumina, mullite with SiC particle and whisker. The presence of silicon carbide (SiC) in ceramic compound is very important for crack-healing behavior. However, self-healing of SiC has not been investigated well in detail yet. In this study, commercial SiC was selected as sample, which can be anticipated in the excellent crack healing ability. The specimens were produced three-point bending specimen with a critical semi-circular crack of which size that is about $50-700{\mu}m$. Three-point bending test and static fatigue test were performed cracked and healed SiC specimens. A monotonic bending load was applied to cracked specimens by three-point loading at different temperature. The purpose of this paper is to report Strength Properties and Elastic Waves Characteristics of Silicon Carbide with Crack Healing Ability.