• 전기전자학회논문지
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• 제19권4호
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• pp.491-499
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• 2015

Silicon Carbide(SiC)는 높은 열전도도와 넓은 밴드갭 에너지로 인해 고온과 고전압 소자로 사용하는데 큰 장점을 가지고 있는 물질이다. SiC를 이용하여 전력반도체소자를 제작할 경우, 소자가 목표 전압을 충분히 견딜 수 있도록 Edge Termination 기법을 적용하여야한다. Edge Termination 기법에는 여러 가지 방안이 제안되어왔는데, SiC 소자에 가장 적합한 기법은 Junction Termination Extension (JTE)이다. 본 논문에서는 각 JTE 구조별 도핑 농도와 Passivation Oxide Charge 변화에 따른 항복전압의 변화를 살펴보았다. 결과적으로 Single Zone JTE (SZ-JTE)는 1D 시뮬레이션 값의 98.24%, Double Zone JTE (DZ-JTE)는 99.02%, Multiple-Floating-Zone JTE (MFZ-JTE)는 98.98%, Space-Modulated JTE (SM-JTE)는 99.22%의 최대 항복전압을 나타내었고, JTE 도핑 농도 변화에 따른 최대 항복전압의 민감도는 MFZ-JTE가 가장 낮은 반면 SZ-JTE가 가장 높았다. 또한 Passivation Oxide 층의 전하로 인해 소자의 항복전압의 변화를 살펴보았는데, 이에 대한 민감도 역시 MFZ-JTE가 가장 낮았으며 SZ-JTE가 가장 높았다. 결과적으로 본 논문에서는, 짧은 JTE 길이에서 높은 도핑 농도를 필요로 하는 MFZ-JTE보다 DZ-JTE와 SM-JTE가 실제 소자 설계에 있어 가장 효과적인 JTE 기법으로 분석되었다.

• 한국세라믹학회지
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• 제33권10호
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• pp.1156-1162
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• 1996

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.117.2-117
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• 2002

• E2M - 전기 전자와 첨단 소재
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• 제20권5호
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• pp.21-29
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• 2007

• 한국세라믹학회지
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• 제34권12호
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• pp.1240-1246
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• 1997

Silicon carbides with self-reinforced microstructure which hore a small grain matrix and dispersed large grains with rod-like type were prepared by the liquid-phase sintering and the control of starting phases of raw materials. The specimens with self-reinforced microstructure could be obtained from the compacts with mixed compositions of $\alpha$-SiC and 10-50 % $\beta$-SiC powders and by the pressureless sintering at 185$0^{\circ}C$ for 5h. Large grains with rod or plate-like types were 4H-SiC and small grains with equi-axed type were 6H-SiC. Fracture grains with rod or plate-like types were 4h-SiC and small grains with equi-axed type were 6H-SiC. Fracture toughness of specimens with self-reinforced microstructure was increased by the crack deflection and formation of microcracking due to the existence of rod-like large grains during crack propagation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).

• 한국세라믹학회지
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• 제50권6호
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• pp.533-538
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• 2013

Silicon carbide (SiC) materials are typical ceramic materials with a wide range of uses due to their high hardness and strength and oxidation resistance. In particular, due to the corrosion resistance of the material against acids and bases including the chemical resistance against ionic gases such as plasma, the application of SiC has been expanded to extreme environments. In the SiC deposition process, where chemical vapor deposition (CVD) technology is used, the reactions between the raw gases containing Si and C sources occur from gas phase to solid phases; thus, the merit of the CVD technology is that it can provide high purity SiC in relatively low temperatures in comparison with other fabrication methods. However, the product yield rarely reaches 50% due to the difficulty in performing uniform and dense deposition. In this study, using a computational fluid dynamics (CFD) simulation, the gas velocity inside the reactor and the concentration change in the gas phase during the SiC CVD manufacturing process are calculated with respect to the gas velocity and rotational speed of the stage where the deposition articles are located.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.163-166
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• 2009

다중접합 초 고효율 태양전지 제조를 위해 SiC 매트릭스를 이용한 실리콘 양자점 초격자 박막을 제조하고 특성을 분석하였다. $SiC/Si_{1-x}C_x$(x ~ 0.31)로 실리콘 양자점 초격자 박막을 Si과 C target을 이용한 co-sputtering법으로 초격자 박막을 제조하고, $1000^{\circ}C$에서 20분간 열처리를 하였다. high resolution transmission electron microscopy 사진으로 약1~7nm 크기인 양자점 생성과 분포 밀도를 확인할 수 있었으며, grazing incident X-ray diffraction (GIXRD)를 통해서 Si(111)과 $\beta$-SiC(111)이 생성되었음을 알 수 있었다. Auger electron spectroscopy (AES)측정에서 stoichiometric SiC층과 Si-rich SiC층의 Si 원자농도 (56%, 69%)와 C 원자 농도 (44%, 31%)를 알 수 있었으며, Fourier transform infra-red spectroscopy (FTIR)측정에서 SiC 픽의 위치가 767에서 $800cm^{-1}$으로 이동하는 것을 알 수 있었다.

• 한국세라믹학회지
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• 제32권7호
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• pp.825-831
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• 1995

Reaction-bonded SiC-Si material was fabricated by infiltration of Si melt into a mixture of $\alpha$-SiC and carbon at 175$0^{\circ}C$ under the vacuum atmosphere. Wear properties were analyzed by ball-on-plate wear tester, changing loading weight, sliding speed, sliding time and atmosphere, Results showed that the friction coefficient was decreased with increasing load and sliding velocity. The lowest friction coefficient of 0.05 was obtained under an oil atmosphere. The analysis of the wear surface indicated that the areas wehre particles were pulled out and where free silicon particles worn out preferentially serve as liquid reservoirs to decrease the wear resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.502-505
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• 2004

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a SiC (Silicon Carbide) thin film. SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability make SiC an attractive candidate for electronic applications. A homeotropic alignment of nematic liquid crystal by ion beam (IB) exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface until annealing temperature of $300^{\circ}C$. Consequently, homeotropic alignment effect of liquid crystal and the good thermal stability by the ion beam alignment method on the SiC thin film layer can be achieved.