• Title/Summary/Keyword: silicon carbide

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Mechanical Behavior of Indentation Stress in Carbon Fiber Reinforced Silicon Carbide Composites with Different Densities (서로 다른 밀도를 갖는 탄소섬유강화 탄화규소 복합재료의 압흔응력에 의한 기계적 거동)

  • Lee, Kee-Sung;Kim, Il-Kyum;Kim, Tae-Woo;Kim, Se-Young;Han, In-Sub;Woo, Sang-Kuk
    • Journal of the Korean Ceramic Society
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    • v.48 no.4
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    • pp.288-292
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    • 2011
  • In this study, we investigated the mechanical behavior of carbon fiber reinforced silicon carbide composites by indentation stress. Relatively porous and dense fiber reinforced ceramic composites were fabricated by liquid silicon infiltration (LSI) process. Densification of fiber composite was controlled by hardening temperature of preform and consecutive LSI process. Load-displacement curves were obtained during indentation of WC sphere on the carbon fiber reinforced silicon carbide composites. The indentation damages at various loads were observed, and the elastic modulus were predicted from unloading curve of load-displacement curve.

Effect of Si:C Ratio on Porosity and Flexural Strength of Porous Self-Bonded Silicon Carbide Ceramics (Si:C Ratio가 다공질 Self-Bonded SiC 세라믹스의 기공율과 곡강도에 미치는 영향)

  • Lim, Kwang-Young;Kim, Young-Wook;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
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    • v.45 no.5
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    • pp.285-289
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    • 2008
  • Porous self-bonded silicon carbide (SiC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, silicon (Si), and carbon (C) powders as starting materials. The effect of the Si:C ratio on porosity and strength was investigated as a function of sintering temperature. It was possible to produce self-bonded SiC ceramics with porosities ranging from 36% to 43%. The porous ceramics showed a maximal porosity when the Si:C ratio was 2:1 regardless of the sintering temperature. In contrast, the maximum strength was obtained when the ratio was 5:1.

Effect of Carbon Source on Porosity and Flexural Strength of Porous Self-Bonded Silicon Carbide Ceramics (탄소 원료가 다공질 Self-Bonded SiC (SBSC) 세라믹스의 기공율과 곡강도에 미치는 영향)

  • Lim, Kwang-Young;Kim, Young-Wook;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
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    • v.45 no.7
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    • pp.430-437
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    • 2008
  • Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1700 to $1850^{\circ}C$ using SiC, silicon (Si), and three different carbon (C) sources, including carbon black, phenol resin, and xylene. The effects of the Si:C ratio and carbon source on porosity and strength were investigated as a function of sintering temperature. Porous SBSC ceramics fabricated from phenol resin showed higher porosity than the others. In contrast, porous SBSC ceramics fabricated from carbon black showed better strength than the others. Regardless of the carbon source, the porosity increased with decreasing the Si:C ratio whereas the strength increased with increasing the Si:C ratio.

Studies on Effects of Deposition Parameters in Manufacturing of C/Sic composites by Pulse-CVI (C/SiC 복합재료 제조시 Pulse-CVI에서 증착변수의 영향 연구)

  • 김용탁;김영준;정귀영
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2001.10a
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    • pp.141-143
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    • 2001
  • Ceramic fiber-reinforced composites have good mechanical properties in hardness and durability. In this study, we studied the formation of SiC/C composites from methyltrichlorosilane and hydrogen by the Pulse-chemical vapor infiltration(PCVI) to deposit silicon carbide around the changes of the amount of deposit. SiC/C composites formed at $950^{\circ}C$, 20torr, Pulse-times (5s/60s). SEM of the cross sectional area of semple showed deposited silicon carbide around fibers.

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Silicon Carbide Coating by Thermal Decomposition of tetramethylsilane

  • YOON Kyung-Hoon
    • Proceedings of the Korean Ceranic Society Conference
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    • 1986.12a
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    • pp.211-225
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    • 1986
  • Silicon carbide coating has been studied using a graphite substrate, a mixture of tetramethylsilane and hydrogen or argon at deposition temperature (T) of 950 to $1200^{\circ}C$ total pressure of 20 to 50 torr and carrier gas flow rate of 0 to 901/h. Deposition kinetic study has shown that a transition, from a surface reaction limited process to a diffusion limited one, takes place near $1100^{\circ}C$. Deposition rate depends directly upon the experimental parameters. The influence of the main process parameters is also discussed to relate the physiochemical properties of the coating to the deposition conditions.

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Friction and Wear of Pressureless Sintered Ti(C,N)-WC Ceramics

  • Park, Dong-Soo;Yun, Shin-Sang;Han, Byoung-Dong;Kim, Hai-Doo
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.211-212
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    • 2002
  • Friction and wear of pressureless sintered Ti(C,N)-WC ceramics were studied using a ball-on-reciprocating flat apparatus in open air. The silicon nitride ball and the cemented carbide (WC-Co) ball were used against the Ti(C,N)-WC plate samples. The friction coefficients of the Ti(C,N)-WC samples against the silicon nitride ball and the cemented carbide ball were about 0.57 and 0.3, respectively. The wear coefficient of the sample without WC addition was 5 times as large as that of the sample with 10 mole % WC addition when tested against the silicon nitride ball under 98 N. The higher wear coefficient of Ti(C,N)-0WC was explained in part by larger grain size. Wear occurred mainly by grain dislodgment after intergranular cracking mainly caused by the accumulated stress within the grains.

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Effect of $\alpha$-Silicon Carbide Particle Size in Reaction Bonded Silicon Carbide ($\alpha$-SiC의 입도가 반응소결 탄화규소 소결체에 미치는 영향)

  • 한인섭;양준환;정헌생
    • Journal of the Korean Ceramic Society
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    • v.26 no.4
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    • pp.583-587
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    • 1989
  • Various $\alpha$-silicon carbied and colloidal graphite particles were sintered at 155$0^{\circ}C$ in vacuum atmosphere by reaction bonding sintering method, and the physical properties and microstructural analysis of specimen were investigated. With decreasing particle size, sintered density and 3-point bending strength of materials were increased and 3.2${\mu}{\textrm}{m}$ specimen showed high density and strength, 3.05g/㎤, 40kg/$\textrm{mm}^2$, respectively. The results of X-ray diffractometer and optical micrographs analysis showed that graphite and silicon melt reacted to convert to fine $\beta$-SiC particle and the body was changed to dense material.

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Conversion of Carbon Fiber into Silicon Carbide Fiber by Pack-Cementation

  • Joo, Hyeok-Jong;Kim, Jung-Il;Lee, Jum-Kyun
    • Carbon letters
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    • v.1 no.1
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    • pp.12-16
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    • 2000
  • Carbon fiber was reacted with gaseous silicon monoxide which is produced from pack-powder mixture at elevated temperature. As a result of the reaction, two kinds of SiC fiber were obtained. The first one was SiC fibers which were converted from carbon fiber. The fiber is constituted with polycrystal like fine grains or monolithic crystals that have a size from sub-micron to $10\;{\mu}m$. Their size depends on the temperature during the conversion reaction. The second one was ultra-fine SiC fibers that were found on the surface of the converted SiC fibers. The ultra-fine fibers have diameters from 0.08 to $0.2\;{\mu}m$ and their aspect ratio were larger than 100. The chemical composit ion of the ultra-fine fibers was analyzed using an Auger electron spectroscopy. In result, the fibers consist of 51% silicon, 38% carbon and 11% oxygen by weight.

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Synthesis of $\beta$-SiC Whiskers by the Carbothermal Reduction of Kaolin (카올린의 환원 열탄화법에 의한 베타 탄화규소 휘스커의 합성)

  • 오세정;류종화;조원승;최상욱
    • Journal of the Korean Ceramic Society
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    • v.35 no.12
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    • pp.1249-1256
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    • 1998
  • ${\beta}$-Silicon carbide(${\beta}$-SiC) whiskers could be synthesized by the carbothermal reduction of kaolin at tem-peratures between 1400 and 1500$^{\circ}C$. The whiskers were grown up to about 1150 of aspect ratio by VS mechanism (showing tapering tips) and to about 45 of that by VLS mechanism (showing round droplet tips) respectively. Hydrocarbon like methane in the reaction atmosphere promoted the formation of gaseous il-icon monoxide(SiO) from silicon dioxide(SiO2) and subsequently reacted with it to form whiskers. The for-mation of ${\beta}$-SiC whiskers increased with increasing carbon content(to 30 wt%) and reaction temperatures. The max. yield of ${\beta}$-SiC whiskers was 15% at 1500$^{\circ}C$ under 20%CH4/80%H2.

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