• Nuclear Engineering and Technology
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• 제45권6호
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• pp.811-820
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• 2013

SiC has been under investigation as a potential cladding for LWR fuel, due to its high melting point and drastically reduced chemical reactivity with liquid water, and steam at high temperatures. As SiC is a brittle material its behavior during the reflood phase of a Loss of Coolant Accident (LOCA) is another important aspect of SiC that must be examined as part of the feasibility assessment for its application to LWR fuel rods. In this study, an experimental assessment of thermal shock performance of a monolithic alpha phase SiC tube was conducted by quenching the material from high temperature (up to $1200^{\circ}C$) into room temperature water. Post-quenching assessment was carried out by a Scanning Electron Microscopy (SEM) image analysis to characterize fractures in the material. This paper assesses the effects of pre-existing pores on SiC cladding brittle fracture and crack development/propagation during the reflood phase. Proper extension of these guidelines to an SiC/SiC ceramic matrix composite (CMC) cladding design is discussed.

• 한국정밀공학회지
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• 제30권12호
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• pp.1245-1251
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• 2013

This study has focused on development of ELID monitoring system and its application to ELID grinding of structural ceramics. ELID monitoring system was consisted of grinding equipment, ELID power supply, grinding wheel, electrode and monitoring program. It can give a real time data to check spindle grinding resistance, wheel revolution, dressing current and voltage in ELID grinding process. The performance of developed system was evaluated by applying to grinding of structural ceramics, silicon carbide and alumina. As the results of experiments, monitored data for spindle resistance and ELID dressing current was useful to check steady-state ELID grinding process. From the comparison of spindle resistance between ELID grinding and conventional grinding process according to change of depth of cut, it could be confirmed that the spindle resistance in ELID grinding was lower than conventional grinding process.

• Transactions on Electrical and Electronic Materials
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• 제6권1호
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• pp.22-24
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• 2005

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87{\circ}$ of stable pretilt angle was achieved at the range from $30{\circ}$ to $45{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to $300{\circ}C$.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집A
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• pp.383-388
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• 2001

Effects of particle property variation of cone crack shape according to impact velocity in silicon carbide materials were investigated. The damage induced by spherical impact having different material and size was different according to materials. The size of ring cracks induced on the surface of specimen increased with increase of impact velocity within elastic contact conditions. The impact of steel particle produced larger ring cracks than that of SiC particle. In case of high impact velocity, the impact of SiC particle produced radial cracks by the elastic-plastic deformation at impact regions. Also percussion cone was formed from the back surface of specimen when particle size become large and its impact velocity exceeded a critical value. Increasing impact velocity, zenithal angle of cone cracks in SiC material was linearly decreasing not effect of impact particle size. An empirical equation, $\theta=\theta_{st}-\upsilon_p(180-\theta_{st})(\rho_p/\rho_s)^{1/2}/415$, was obtained from the test data as a function of quasi-static zenithal angle of cone crack($\theta_{st}$), the density of impact particle(${\rho}_p$) and specimen(${\rho}_s$). Applying this equation to the another materials, the variation of zenithal angle of cone crack could be predicted from the particle impact velocity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.58-62
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• 2003

Silicon carbide (SiC) was etched in a $NF_3/CH_4$ inductively coupled plasma. The etch process was modeled by using a neural network called generalized regression neural network (GRNN). For modeling, the process was characterized by a $2^4$ full factorial experiment with one center point. To test model appropriateness, additional test data of 16 experiments were conducted. Particularly, the GRNN predictive capability was drastically improved by a genetic algorithm (GA). This was demonstrated by an improvement of more than 80% compared to a conventionally obtained model. Predicted model behaviors were highly consistent with actual measurements. From the optimized model, several plots were generated to examine etch rate variation under various plasma conditions. Unlike the typical behavior, the etch rate variation was quite different depending on the bias power Under lower bias powers, the source power effect was strongly dependent on induced dc bias. The etch rate was strongly correated to the do bias induced by the gas ratio. Particularly, the etch rate variation with the bias power at different gas ratio seemed to be limited by the etchant supply.

• 한국자동차공학회논문집
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• 제4권4호
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• pp.130-139
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• 1996

The silicon carbide particles reinforced aluminium 6061($SiCp/A\ell$) composites are generally known have wild range of applications from automobiles to airospaces. But, by the results of existing study for $SiCp/A\ell$ composites, there are reports that the fatigue life of $SiCp/A\ell$ composites has improved than $A\ell$matrixes and has not improved then $A\ell$ matrixes. Consequently, in order to perform the reliable life prediction for $SiCp/A\ell$, the properties of probability distribution of fatigue crack initiation life & fracture life, crack growth length in constant number of cycles, crack growth rate in constant stress intensity factor range and m & C value in Paris's fatigue crack growth law and the estimation of statistical parameters have been evaluated by the statistics method.

• 대한기계학회논문집B
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• 제30권10호
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• pp.957-965
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• 2006

A high-performance hot chuck is designed as a heating device for an ultra-precision flip-chip bonder with infrared alignment system. Analysis of design requirements for thermal performance leads to a radiative heating mechanism employing two halogen lamps as heating source. The heating tool is made of silicon carbide characterized by high thermal diffusivity and small thermal expansion coefficient. Experimental tests are performed to assess heat-up performance and temperature uniformity of the heating tool. It is revealed that the initial design of hot chuck results in a good heat-up speed but there exist a couple of troubles associated with control and integrity of the device. As a means to resolve the raised issues, a revised version of heating tool is proposed, which consists of a working plate made of silicon carbide and a supporting structure made of stainless steel. The advantages of this two-body heating tool are discussed and the improved features are verified experimentally.

• Journal of Radiation Protection and Research
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• 제37권2호
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• pp.70-74
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• 2012

Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a $^{252}Cf$ neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.304-310
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• 1998

Carbothermal reduction has been one of the important processes for the production of ceramic raw materials such as silicon carbide, silicon nitride, boron carbide, etc. The process has also been one of several trials for the recovery of ZnO from ZnO-containing waste. It usually involves two consecutive steps: the evolution of Zn vapor and its oxidation with air. In this study a ZnO-containing raw material is reduced by carbon at $1250^{\circ}C$ and the evolved Zn vapor is oxidized with air, resulting in fine powders of ZnO. computer programs, THERMO and PYROSIM developed by MINTEK, are used to simulate the process thermodynamically and the results are compared with the experimental results. It is shown that the ZnO-containing raw material can be reduced and can form fine ZnO with the yield as high as 98.7% under a proper condition. Based on these results, a process is engineered for the production of ZnO in a rotary kiln at a rate of 3 tons/day. The produced ZnO powders show properties suitable to the usual applications in ceramic industries with a purity of > 95wt% and an average particle size of ∼3${\mu}m$.

• 한국세라믹학회지
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• 제35권12호
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• pp.1329-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.