• Title/Summary/Keyword: silicon Carbide

Search Result 748, Processing Time 0.03 seconds

Technology Trend of SiC CMOS Device/Process and Integrated Circuit for Extreme High-Temperature Applications (고온 동작용 SiC CMOS 소자/공정 및 집적회로 기술동향)

  • Won, J.I.;Jung, D.Y.;Cho, D.H.;Jang, H.G.;Park, K.S.;Kim, S.G.;Park, J.M.
    • Electronics and Telecommunications Trends
    • /
    • v.33 no.6
    • /
    • pp.1-11
    • /
    • 2018

  • Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.

  • https://doi.org/10.22648/ETRI.2018.J.330601 인용 PDF HTML

Effect of Silicon on Intergranular Corrosion Resistance of Ti-stabilized 11 wt% Cr Ferritic Stainless Steels (11 wt% 크롬이 함유된 Ti 첨가 페라이트스테인리스강의 입계부식에 미치는 규소의 영향)

  • Hyun, Youngmin;Kim, Heesan
    • Corrosion Science and Technology
    • /
    • v.12 no.6
    • /
    • pp.265-273
    • /
    • 2013

  • Ti-stabilized 11 wt% Cr ferritic stainless steels (FSSs) for automotive exhaust systems have been experienced intergranular corrosion (IC) in some heat-affected zone (HAZ). The effects of sensitizing heat-treatment and silicon on IC were studied. Time-Temperature-Sensitization (TTS) curves showed that sensitization to IC was observed at the steels heat-treated at the temperature lower than $650^{\circ}C$ and that silicon improved IC resistance. The sensitization was explained by chromium depletion theory, where chromium is depleted by precipitation of chromium carbide during sensitizing heat-treatment. It was confirmed with the results from the analysis of precipitates as well as the thermodynamical prediction of stable phases. In addition, the role of silicon on IC was explained with the stabilization of grain boundary. In other words, silicon promoted the formation of the grain boundaries with low energy where precipitation was suppressed and consequently, the formation of Cr-depleted zone was retarded. The effect of silicon on the formation of grain boundaries with low energy was proved by the analysis of coincidence site lattice (CSL) grain boundary, which is a typical grain boundary with low energy.

  • https://doi.org/10.14773/cst.2013.12.6.265 인용 PDF KSCI

A Study on the Direct Synthesis of TaC by Cast-bonding (주조접합법에 의한 TaC 직접합성에 관한 연구)

  • Park, Heung-Il;Lee, Sung-Youl
    • Journal of Korea Foundry Society
    • /
    • v.17 no.4
    • /
    • pp.371-378
    • /
    • 1997

  • The study for direct synthesis of TaC carbide which was a reaction product of tantalum and carbon in the cast iron was performed. Cast iron which has hypo-eutectic composition was cast bonded in the metal mold with tantalum thin sheet of thickness of $100{\mu}m$. The contents of carbon and silicon of cast iron matrix was controlled to have constant carbon equivalent of 3.6. The chracteristics of microstructure and the formation mechanism of TaC carbide in the interfacial reaction layer in the cast iron/tantalum thin sheet heat treated isothermally at $950^{\circ}C$ for various time were examined. TaC carbide reaction layer was grown to the dendritic morphology in the cast iron/tantalum thin sheet interface by the isothermal heat treatment. The composition of TaC carbide was 48.5 at.% $Ti{\sim}48.6$ at.% C-2.8 at.% Fe. The hardness of reaction layer was MHV $1100{\sim}1200$. The thickness of reaction layer linearly increased with increasing the total content of carbon in the cast iron matrix and isothermal heat treating time. The growth constant for TaC reaction layer was proportional to the log[C] of the matrix. The formation mechanism of TaC reaction layer at the interface of cast iron/tantalum thin sheet was proved to be the interfacial reaction.

  • PDF