• Fire Science and Engineering
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• v.34 no.1
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• pp.1-10
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• 2020

In this study, boron/silicon sol compounds were applied to wood for construction and durable materials, and fire risks were investigated in terms of smoke performance index (SPI), smoke growth index (SGI), and smoke intensity (SI). The compound was synthesized by reacting tetraethoxyorthosilicate with boric acid and boronic acid derivatives. Smoke characteristics were investigated using a cone calorimeter (ISO 5660-1) equipment for cypress wood. The fire intensity fixed the external heat flux at 50 kW/㎡. The smoke performance index measured after the combustion reaction increased between 13.4% and 126.7% compared with cypress wood. The fire risk due to the smoke performance index decreased in the order of cypress, phenylboronic acid/silicon sol (PBA/Si), (2-methylpropyl) boronic acid/silicon sol (IBBA/Si), boric acid/silicon sol (BA/Si). The smoke growth index decreased between 12.0% and 57.5% compared to the base specimen. The risk of fire caused by the smoke growth index decreased in the order of cypress, PBA/Si, IBBA/Si, BA/Si. The fire risk due to smoke intensity decreased between 3.2% and 57.8%, and in the order of cypress, PBA/Si, IBBA/Si, BA/Si. CO_peak concentrations ranged between 85 and 93 ppm, and decreased between 37% and 43% compared to the base specimen. A comprehensive assessment of the fire risk on smoke hazards decreased in the order of cypress, PBA/Si, IBBA/Si, BA/Si.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.63-67
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• 1991

Amorphous silicon films were deposited on glass, [100] single crystal silicon wafer with thermally grown silicon dioxide, and [100] silicon wafer substrates by Plasma Enhanced Chemical Vapor Deposition(with argon diluted silane source gas). Growth rate, UV optical band edge, and the hydrogen quantity in the amorphous silicon films have been investigated as a function of the preparation conditions by measuring film thickness, UV-absorbency, and FT-IR transmittance. The growth rate of the ${\alpha}$-Si:H films increases with increasing substrate temperture, flow rate and R.F. power density. The UV optical band edge shifts to blue with the increases in the deposition pressure. Increasing substrate temperature shifts the UV optical band edge of the films to red. Hydrogen quantity in the ${\alpha}$-Si:H films increases with an increases in the R.F. powr and decreases with an increase in the substrate temperature.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.297-301
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• 2006

Si/Mo multilayer anode consisting of active/inactive material was prepared using rf/dc magnetron sputtering. Molybdenum acts as a buffer against the volume change of the Silicon. Multilayer deposited on RT (reversible treatment) copper foil current collector to enhance adhesion between Silicon and copper foil. Deposited Silicon was identified as an amorphous. Amorphous has a relatively open structure than crystal structure, thus prevents the lattice expansion and has many diffusion paths of Li ion. When deposited time of Silicon and Molybdenum is 30 second and 2 second respectably, electrode has more capacity and good cycle stability. A 3000 nm thick multilayer was maintained 99% of the initial capacity (1624 $mAhg^{-1}$) after 100 cycles. As the increase of the multilayer thickness (4500 nm, 6000 nm), Si/Mo mutilayer anodes show aggravation cycle stability.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.611-611
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• 2013

In this study, iron oxide nanoclusters layer (Nc) was prepared onto functionalized silicon substrate by wet method. The amine-terminated SAM fabricated on silicon substrate (APTMS/Si) was carried out by UV-treatment and immersed into the FeCl3/HCl aqueous solution. Then, Nc were immobilized onto oxidized SAM silicon substrate (SAMs/Si) through electrostatic interaction between cationic Nc and anionic SAMs/Si. This catalytic layer (Nc/SAMs/Si) was used to grow carbon nanotubes (CNTs). The characterization results clearly show that the well-graphitized CNTs were synthesized by using functionalized silicon substrate as a template having appropriate density of catalyst. These consequences show that SAM containing template is important to achieve the effective layer of catalyst to synthesize CNTs.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.376-380
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• 2000

Carbon nanofibers with an average diameter of 100nm were reacted with SiO vapor generated from a mixture of Si and SiO2 to produce silicon carbide nanofibers at temperature ranging 1200∼1500$^{\circ}C$ under vacuum. The nanofiber reacted at 1200$^{\circ}C$ for two hours consisted of silicon carbide with an average crystallite size of 10-20nm, amorphous silica and a significant amount of unreacted carbon. The surface area of silicon carbide nanofiber, obtained after removal of amorphous silica and unreacted carbon from converted carbon nanofibers at 1200$^{\circ}C$, was as high as 150㎡/g. With increasing reaction temperature to 1500$^{\circ}C$, the surface area was decreased to 14㎡/g. Growth of SiC crystallite size with increasing conversion temperature of carbon nanofiber was confirmed from Scherrer formula using the (111) diffraction line and TEM images of converted carbon nanofibers.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.105.1-105.1
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• 2011

To enhance the performance of photovoltaic a-Si:H solar cells with a hybrid-type light absorbing structure of single crystal silicon nanoparticles (Si NPs) in a-Si:H matrix, single crystal Si NPs were produced by laser pyrolysis. The Si NPs were synthesized by $SiH_4$ gas decomposition using a $CO_2$ laser. The properties of Si NPs were controlled by process parameters such as $CO_2$ laser power, reactive gas pressure, and $H_2/SiH_4$ gas flows. The crystalline properties and sizes of Si NPs were analyzed by High Resolution Transmission Electron Microscopy (HRTEM). The sizes of Si NPs were controllable in the range of 5-15 nm in diameter and the effects of process parameters of laser pyrolysis were systematically investigated.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.120-124
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• 2011

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.367-380
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• 2013

In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.