• 제목/요약/키워드: silicon/silica interface

검색결과 7건 처리시간 0.02초

Effective Silicon Oxide Formation on Silica-on-Silicon Platforms for Optical Hybrid Integration

  • Kim, Tae-Hong;Sung, Hee-Kyung;Choi, Ji-Won;Yoon, Ki-Hyun
    • ETRI Journal
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    • 제25권2호
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    • pp.73-80
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    • 2003
  • This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

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Electrical Instabilities of Mesoporous Silica Thin Films

  • ;정현담
    • 통합자연과학논문집
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    • 제3권4호
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    • pp.219-225
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    • 2010
  • On the surface of mesoporous silica thin films (MSTF) which were fabricated by sol-gel approach there are existences of water and three different silanol types including chained, germinal and isolated silanol. Their amounts changes as a function of aging time of used sol solution, as confirmed by FT-IR. The adsorbed water generates ionic carriers such as H+ and OH- and passivates the Si dangling bonds at the interface of silicon wafer-MSTF. The ionic carriers can not only transport across the thickness of thin film to enhance the leakage current but also diffuse toward the silicon wafer-MSTF interface to depassivate Si dangling bonds. On the other hand, chained silanols or germinal silanols promote the moisture adsorption of MSTF and tend to form strongly hydrogen bonded systems with adsorbed water molecules resulting in very high dielectric constant. Isolated silanol, on the contrary, affects less on electrical properties of thin film.

Novel Fabrication of Designed Silica Structures Inspired by Silicatein-a

  • Park, Ji-Hun;Kwon, Sun-Bum;Lee, Hee-Seung;Choi, In-Sung S.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.557-557
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    • 2012
  • Silicatein-${\alpha}$, the enzyme extracted from silica spicules in glass sponges, has been studied extensively in the way of chemistry from 1999, in which the pioneering work by Morse, D. E. - the discovery of the enzymatic hydrolysis in Silicatein-${\alpha}$ - was published. Since its reaction conditions are physiologically favored, synthesis of various materials, such as gallium oxide, zirconium oxide, and silicon oxide, was achieved without any hazardous wastes. Although some groups synthesized oxide films and particles, they have not achieved yet controlled morphogenesis in the reaction conditions mentioned above. With the knowledge of catalytic triad involved in hydrolysis of silicone alkoxide and oligomerization of silicic acid, we designed the novel peptide amphiphiles to not only form self-assembled structure, but also display similar activities to silicatein-${\alpha}$. Designed templates were able to self-assemble into left-handed helices for the peptide amphiphiles with L-form amino acid, catalyzing polycondensation of silicic acids onto the surface of them. It led to the formation of silica helices with 30-50 nm diameters. These results were characterized by various techniques, including SEM, TEM, and STEM. Given the situation that nano-bio-technology, the bio-applicable technology in nanometer scale, has been attracting considerable attention; this result could be applied to the latest applications in biotechnology, such as biosensors, lab-on-a-chip, biocompatible nanodevices.

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SiAlON Bulk Glasses and Their Role in Silicon Nitride Grain Boundaries: Composition-Structure-Property Relationships

  • Hampshire, Stuart;Pomeroy, Michael J.
    • 한국세라믹학회지
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    • 제49권4호
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    • pp.301-307
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    • 2012
  • SiAlON glasses are silicates or alumino-silicates, containing Mg, Ca, Y or rare earth (RE) ions as modifiers, in which nitrogen atoms substitute for oxygen atoms in the glass network. These glasses are found as intergranular films and at triple point junctions in silicon nitride ceramics and these grain boundary phases affect their fracture behaviour. This paper provides an overview of the preparation of M-SiAlON glasses and outlines the effects of composition on properties. As nitrogen substitutes for oxygen in SiAlON glasses, increases are observed in glass transition temperatures, viscosities, elastic moduli and microhardness. These property changes are compared with known effects of grain boundary glass chemistry in silicon nitride ceramics. Oxide sintering additives provide conditions for liquid phase sintering, reacting with surface silica on the $Si_3N_4$ particles and some of the nitride to form SiAlON liquid phases which on cooling remain as intergranular glasses. Thermal expansion mismatch between the grain boundary glass and the silicon nitride causes residual stresses in the material which can be determined from bulk SiAlON glass properties. The tensile residual stresses in the glass phase increase with increasing Y:Al ratio and this correlates with increasing fracture toughness as a result of easier debonding at the glass/${\beta}-Si_3N_4$ interface.

Variation of the Si-induced Gap State by the N defect at the Si/SiO2 Interface

  • 김규형;정석민
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.128.1-128.1
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    • 2016
  • Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

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Fundamental parameters of nanoporous filtration membranes

  • Wei Li;Xiaoxu Huang;Yongbin Zhang
    • Membrane and Water Treatment
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    • 제14권3호
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    • pp.115-120
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    • 2023
  • The design theory for nanoporous filtration membranes needs to be established. The present study shows that the performance and technical advancement of nanoporous filtration membranes are determined by the fundamental parameter I (in the unit Watt1/2) which is formulated as a function of the shear strength of the liquid-pore wall interface, the radius of the filtration pore, the membrane thickness, and the bulk dynamic viscosity of the flowing liquid. This parameter determines the critical power loss on a single filtration pore for initiating the wall slippage, which is important for the flux of the membrane. It also relates the membrane permeability to the power cost by the filtration pore. It is shown that for biological cellular membranes its values are on the scale 1.0E-8Watt1/2, for mono-layer graphene membranes its values are on the scale 1.0E-9Watt1/2, and for nanoporous membranes made of silica, silicon nitride or silicon carbonized its values are on the scale 1.0E-5Watt1/2. The scale of the value of this parameter directly measures the level of the performance of a nanoporous filtration membrane. The carbon nanotube membrane has the similar performance with biological cellular membranes, as it also has the value of I on the scale 1.0E-8Watt1/2.

고용량 고안정성 리튬 이차전지 음극소재를 위한 이중 중공을 갖는 실리콘/탄소 복합체의 설계 (Silicon/Carbon Composites Having Bimodal Mesopores for High Capacity and Stable Li-Ion Battery Anodes)

  • 박홍열;이정규
    • 청정기술
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    • 제27권3호
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    • pp.223-231
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    • 2021
  • 실리콘은 상용 흑연(Graphite, Gr) 음극재 대비 약 10배 정도 높은 이론용량을 가지나 전기전도도가 낮고 충·방전 시 큰 부피변화로 수명이 짧은 문제가 있다. 실리콘의 문제점 해결 방안으로 전도성 탄소와 복합체 형성과정에서 실리카 나노입자 템플레이트를 이용해 복합체 내부에 이중 중공을 갖는 실리콘 나노입자/중공탄소(SiNP/HC) 소재를 제조하였다. 비교를 위해 중공을 갖지 않는 SiNP/C 복합체를 제조하여 SiNP/HC 복합체와의 물리·화학적 특성과 음극소재로서의 전기화학적 특성을 X-ray 회절기, X-선 광전자 분광기, 비표면적과 기공분포 분석을 위한 질소 흡/탈착 실험, 주사형 전자현미경 및 투과형 전자현미경으로 비교·분석하였다. SiNP/C 복합체 대비 SiNP/HC는 사이클 후에도 전극의 큰 부피변화 없이 월등히 우수한 수명특성과 효율을 보였다. 흑연과 혼합한 하이브리드형 SiNP/HC@Gr 복합체는 SiNP/HC와 비교해 낮은 용량에서 더욱 개선된 수명 특성과 효율을 보였다. 따라서 복합체 내부에 실리콘의 부피팽창을 수용하는 중공을 갖는 실리콘/탄소 복합체를 설계하는 것이 수명특성 확보에 유효함을 확인하였다. 복합체 내부에 많은 중공의 존재로 비표면적이 커서 과도한 SEI층 형성에 따른 낮은 초기 효율의 문제점이 있으므로 이에 대한 보완 연구가 필요할 것으로 사료된다.