• Journal of Korea Water Resources Association
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• v.50 no.2
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• pp.89-97
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• 2017

Turbulent flow structure in the high amplitude meandering channel is complex due to secondary recirculation with helicoidal motions and shear layers formed by flow separation from the curved sidewall. In this work, the secondary flow and the superelevation of the water surface produced in the high-amplitude Kinoshita channel are reproduced by the unsteady Reynolds-averaged Navier-Stokes (RANS) computations using the VOF technique for resolving the variation of water surface elevation and three statistical turbulence models ($k-{\varepsilon}$, RNG $k-{\varepsilon}$, $k-{\omega}$ SST). The numerical results computed by a second-order accurate finite volume method are compared with an existing experimental measurement. Among applied turbulence models, $k-{\omega}$ SST model relatively well predicts overall distribution of the secondary recirculation in the Kinoshita channel, while all three models yield similar prediction of water superelevation transverse slope. The secondary recirculation driven by the radial acceleration in the upstream bend affects the flow structure in the downstream bend, which yields a pair of counter-rotating vortices at the bend apex. This complex flow pattern is reasonably well reproduced by the $k-{\omega}$ SST model. Both $k-{\varepsilon}$ based models fail to predict the clockwise-rotating vortex between a pair of counter-rotating vortices which was observed in the experiment. Regardless of applied turbulence models, the present computations using the VOF method appear to well reproduce the superelevation of water surface through the meandering channel.

• Applied Chemistry for Engineering
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• v.18 no.1
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• pp.24-28
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• 2007

The etching of zinc oxide (ZnO) thin films has been studied using a high density plasma in a $Cl_2/Ar$ gas. The etch characteristics of ZnO thin films were systematically investigated on varying $Cl_2$ concentration, coil rf power, dc-bias voltage, and gas pressure. With increasing $Cl_2$ concentration, the etch rate of ZnO thin film increased, the redeposition around the etched patterns decreased but the sidewall slope of the etched patterns slanted. As the coil rf power and dc-bias voltage increased, the etch rates of ZnO thin films increased and etch profiles of ZnO thin films were improved. With increasing gas pressure, the etch rate of ZnO thin films slightly increased but little change in etch profile was observed. Based on these results, the optimal etching conditions of ZnO thin film were selected. Finally, the etching of ZnO thin films with a high degree of anisotropy of approximately $75^{\circ}{\sim}80^{\circ}$ without the redepositions and residues was successfully achieved at the etching conditions of 20% $Cl_2$ concentration, coil rf power of 1000 W, dc-bias voltage of 400 V, and gas pressure of 5 mTorr.

• Journal of the Korean Institute of Landscape Architecture
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• v.45 no.1
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• pp.94-104
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• 2017

With the recent increasing interest in preventive medicine, observation has been made regarding the positive relationship between a routinized place that includes activity and health improvement. This study evaluates the effective value of a designed landscape for seeing a healing environment and sees the difference of the effective value of classified physical settings regarding Evidence Based Design. Therefore, the study evaluates the perceived restorativeness scale of Cheonggyceheon's 1.5km section and five type settings in the same section regarding how much it works as a healthy urban park. The research methodology used to study sub-settings' and the research site's restoration effects was observation and questionnaires. A PRS (Perceived Restorativeness Scale) questionnaire survey was the research tool employed. The study drew two major results. Firstly, PRS 6.12 is the score of the whole research site, so the study identifies that Cheonggycheon has a mental fatigue restoration function. Secondly, the sub-setting named 'Near Sidewall' was the most attention restorative, according to the ANOVA results. In conclusion, this study suggests significant information support regarding the reasons for creating green areas in urban settings by identifying a particular designed healing sit.

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.421-426
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• 2009

We report on the capacitively coupled O2 plasma etching of PMMA and polycarbonate (PC) with a diffusion pump. Plasma process variables were process pressure and CCP power at 5 sccm $O_2$ gas flow rate. Characterization was done in order to analyze etch rate, etch selectivity, surface roughness, and morphology using stylus surface profilometry and scanning electron microscopy. Self bias decreased with increase of process pressure in the range of 25$\sim$180 mTorr. We found an important result for optimum pressure for the highest etch rate of PMMA and PC, which was 60 mTorr. PMMA and PC had etch rates of 0.46 and 0.28 ${\mu}m$/min under pressure conditions, respectively. More specifically, etch rates of the materials increased when the pressure changed from 25 mTorr to 60 mTorr. However, they reduced when the pressure increased further after 60 mTorr. RMS roughnesses of the etched surfaces were in the range of 2.2$\sim$2.9 nm. Etch selectivity of PMMA to a photoresist was $\sim$1.5:1 and that of PC was $\sim$0.9:1. Etch rate constant was about 0.04 ${\mu}m$/minW and 0.02 ${\mu}m$/minW for PMMA and PC, respectively, with the CCP power change at 5 sccm $O_2$ and 40 mTorr process pressure. PC had more erosion on the etched sidewall than PMMA did. The OES data showed that the intensity of the oxygen atomic peak (777.196 nm) proportionally increased with the CCP power.

• Journal of the Korea institute for structural maintenance and inspection
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• v.18 no.6
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• pp.50-59
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• 2014

In this paper, Reinforced concrete (R/C) and R/C+steel plate concrete slab was carried out by SAP2000 software program in order to compare the stability of the multi-functional fishway, that is Bonggok fishway, built at Bonggok river recently in Gumi city, when the size of underground passage is $1m{\times}0.2m$, $1m{\times}0.4m$, $1m{\times}0.6m$ and the velocity is 0.8m/s, 1.2m/s, 1.6m/s respectively for the S2 (R/C+S/C). The analysis shows the maximum stress of S2 decreases less 26~50% than that of Bonggok, bending moment of sidewall decreases less 28~54%, maximum stress of side wall decreases less 17~31%, bending moment of upper slab decreases less 24~47%, maximum stress of upper slab decreases less 4~20%, and bending moment decreases less 10~27% than that of Bonggok. The complementation is required as much as the following percent; 27% and 25% for the maximum stress and bending moment of underground passage, 15% and 24% for the side wall maximum stress and bending moment, and 10% and 14% for the upper slab maximum stress and bending moment, respectively. This result shows that the S2 is greatly superior to that of the Bonggok fishway, and underground passage size of $1m{\times}0.4m$ is superior to that of $1m{\times}0.2m$ or $1m{\times}0.6m$, and R/C+S/C slab is superior to that of R/C slab. This result is expected to be the basic data for the construction and design of the multi-functional fishway.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.1
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• pp.124-132
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• 2002

In this paper, we present a vision algorithm and method for input image improvement and preprocessing of dented and raised characters on the sidewall of tires. we define optical condition between reflect coefficient and reflectance by the physical vector calculate. On the contrary this work will recognize the engraved characters using the computer vision technique. Tire input images have all most same grey levels between the characters and backgrounds. The reflectance is little from a tire surface. therefore, it's very difficult segment the characters from the background. Moreover, one side of the character string is raised and the other is dented. So, the captured images are varied with the angle of camera and illumination. For optimum Input images, the angle between camera and illumination was found out to be with in 90$^{\circ}$. In addition, We used complex filtering with low-pass and high-pass band filters to improve input images, for clear input images. Finally we define equation reflect coefficient and reflectance. By doing this, we obtained good images of tires for pattern recognition.

• Korean Journal of Optics and Photonics
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• v.16 no.4
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• pp.384-391
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• 2005

A polymer optical microring resonator, which is laterally coupled to a straight bus waveguide, has been proposed and demonstrated using a nanoimprint technique. The propagation loss of the ring waveguide and the optical power coupling between the ring and bus waveguides was calculated by using a beam propagation method, then the dependence of the device performance on them was investigated using a transfer matrix method. We have especially introduced an imprint stamp incorporating a smoothing buffer layer made of a silicon nitride thin film. This layer played an efficient role in improving the sidewall roughness of the waveguide pattern engraved on the stamp and thus reducing the scattering loss. As a result the overall Q factor of the resonator was greatly increased. Also it reduced the gap between the ring and bus waveguides effectively to enhance the coupling between them, without relying on the direct writing method based on an e-beam writer. As for the achieved device performance at the wavelength of 1550 nm, the quality factor, the extinction ratio, and the free spectral range were ~103800, ~11 dB, and 1.16 m, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.255-261
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• 2008

In this study, the propagation characteristics and the fabrication tolerance of an optical wire in a flexible optical PCB were analyzed by using a ray-tracing method. It is found from the analysis that the sidewall angle of a core should be controlled within $1^{\circ}$ in order to maintain the propagation loss to less than -1 dB/mm, and that the bending radius of the optical wire should be larger than 5 mm in order to suppress the bending loss below -1 dB. In addition, it is confirmed that the lateral misalignment of ${\pm}15\;{\mu}m$, and the angular tilting of VCSEL of $6^{\circ}$ are allowable for the coupling loss of -1 dB.