• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.54-61
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• 2007

A variable gain low noise amplifier (VG-LNA) implemented in TSMC 0.18 um process is presented. This VG-LNA is designed of two stage amplifier, and its gain is controlled by the shunt feedback loop composed of a gain control transistor (GCT) and a coupling capacitor in second stage. The channel resistance of GCT in the shunt feedback loop influences the input and output stages of a second stage by the Miller effect. Total gain of the proposed VG-LNA is changed by two factors, the load impedance reduction and the interstage mismatch by controlling the channel resistance of the GCT. Consequently, by adding a shunt feedback with a gain control transistor, this proposed VG-LNA achieves both wide gain tuning range of 37 dB and continuous gain control simultaneously.

• Proceedings of the KIPE Conference
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• 2011.07a
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• pp.200-201
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• 2011

본 논문에서는, 동기 전동기 구동을 위해 세 개의 Shunt Resistor를 이용하여 전류를 피드백 받는 방법에 대하여 분석한다. 특히 세 개의 Shunt Resistor를 이용하여 전류를 피드백 받는 경우 인버터 출력 전압의 크기에 따라 피드백 받은 상전류 정보의 왜곡이 발생하는 문제점에 대하여 분석하고 이를 해결하기 위한 새로운 방법을 제안하며, 실험 결과를 통하여 검증한다.

• Journal of Chest Surgery
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• v.52 no.4
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• pp.232-235
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• 2019

A 2.5-kg neonate with coarctation of the aorta and a small left ventricle experienced a severe pulmonary hypertensive crisis. An emergency pulmonary artery-to-systemic artery shunt was placed to break the positive feedback loop caused by pulmonary hypertension and functional mitral stenosis. This shunt provided immediate relief of suprasystemic pulmonary hypertension and the resultant low cardiac output.

• Proceedings of the KIPE Conference
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• 2010.11a
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• pp.318-319
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• 2010

동기 전동기 구동에서는 정밀한 토크 제어를 위해 벡터 제어가 필요하다. 이를 위해 전류 피드백이 필요하며, 전류를 검출하는 방법으로 1개 또는 3개의 shunt resistor를 사용하여 각각 dc-link 전류 검출 또는 상 전류를 검출하는 것이 있다. 이 전류 검출 방법들의 문제 발생 구간을 분석한다.

• Smart Media Journal
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• v.4 no.2
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• pp.55-61
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• 2015

A bandwidth-enhanced ultra-wide band (UWB) CMOS balun-LNA is implemented as a part of a software defined radio (SDR) receiver which supports multi-band and multi-standard. The proposed balun-LNA is composed of a single-to-differential converter, a differential-to-single voltage summer with inductive shunt peaking, a negative feedback network, and a differential output buffer with composite common-drain (CD) and common-source (CS) amplifiers. By feeding the single-ended output of the voltage summer to the input of the LNA through a feedback network, a wideband balun-LNA exploiting negative feedback is implemented. By adopting a source follower-based inductive shunt peaking, the proposed balun-LNA achieves a wider gain bandwidth. Two LNA design examples are presented to demonstrate the usefulness of the proposed approach. The LNA I adopts the CS amplifier with a common gate common source (CGCS) balun load as the S-to-D converter for high gain and low noise figure (NF) and the LNA II uses the differential amplifier with the ac-grounded second input terminal as the S-to-D converter for high second-order input-referred intercept point (IIP2). The 3 dB gain bandwidth of the proposed balun-LNA (LNA I) is above 5 GHz and the NF is below 4 dB from 100 MHz to 5 GHz. An average power gain of 18 dB and an IIP3 of -8 ~ -2 dBm are obtained. In simulation, IIP2 of the LNA II is at least 5 dB higher than that of the LNA I with same power consumption.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1055-1063
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• 2013

Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Journal of Power Electronics
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• v.11 no.3
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• pp.311-318
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• 2011

LCL filters installed at converter outputs offer a higher harmonic attenuation than L filters. However, as a three order resonant circuit, it is difficult to stabilize and has a risk of oscillating with the power grid. Therefore, careful design is required to damp LCL resonance. Compared to a passive damping method, an active damping method is a more attractive solution for this problem, since it avoids extra power losses. In this paper, the damping capabilities of capacitor current, capacitor voltage, and grid-side current feedback methods, are analyzed under the discrete-time state-space model. Theoretical analysis shows that the grid-side current feedback method is more suitable for use in active power filters, because it can damp LCL resonance more effectively than the other two methods when the ratio of the resonance and the control frequency is between 0.225 and 0.325. Furthermore, since there is no need for extra sensors for additional states measurements, this method provides a cost-efficient solution. To support the theoretical analysis, the proposed method is tested on a 7-kVA single-phase shunt active power filter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.100-108
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• 2014

Low noise amplifier (LNA) is an integral component of RF receiver and frequently required to operate at wide frequency bands for various wireless system applications. For wideband operation, important performance metrics such as voltage gain, return loss, noise figure and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high impedance-matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that input impedance can be described in the form of second-order frequency response, where poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor located between the gate and the drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this wideband LNA is $0.202mm^2$, including pads. Measurement results illustrate that the input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 6-8 dB over 1.5 - 13 GHz. In addition, good linearity (IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.1
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• pp.13-25
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• 1968

A detailed analysis of the transistor wide-band feedback amplifiers using the hybrid-$\pi$ equivalent circuit has been made. It is considered both for the low freqnency and for the high frequency. The expressions of the gain, bandwidth. input impedance and output impedance have been presented. It is shown that a series feedback amplifier should be driven from the voltage source and should drive into the low resistance load, and a shunt feedback amplifier should be driven from the current source and should drive into the high resistance load. It is also shown that these stages can be coupled without use of the buffer stage or coupling transformer.

• ETRI Journal
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• v.35 no.3
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• pp.378-385
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• 2013

An S-band multifunction chip with a simple interface for an active phased array base station antenna for next-generation mobile communications is designed and fabricated using commercial 0.5-${\mu}m$ GaAs pHEMT technology. To reduce the cost of the module assembly and to reduce the number of chip interfaces for a compact transmit/receive module, a digital serial-to-parallel converter and an active bias circuit are integrated into the designed chip. The chip can be controlled and driven using only five interfaces. With 6-bit phase shifting and 6-bit attenuation, it provides a wideband performance employing a shunt-feedback technique for amplifiers. With a compact size of 16 $mm^2$ ($4mm{\times}4mm$), the proposed chip exhibits a gain of 26 dB, a P1dB of 12 dBm, and a noise figure of 3.5 dB over a wide frequency range of 1.8 GHz to 3.2 GHz.