• Title/Summary/Keyword: short film

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Identification of Dynamic Stiffness of Squeeze Film Damper using Active Magnetic Bearing System as an Exciter (자기베어링 시스템을 가진기로 이용한 스퀴즈 필름 댐퍼의 동강성 계수 규명)

  • Kim, Keun-Joo;Lee, Chong-Won
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2002.11b
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    • pp.381-387
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    • 2002
  • In this work, the dynamic characteristics of an oil-lubricated, short SFD with a central feeding groove are derived based on a theoretical analysis considering the effect of a groove. The validity of the analysis is investigated experimentally using an Active Magnetic Bearing (AMB) system as an exciter. For the theoretical solution, the fluid film forces of a grooved SFD are analytically derived so that the dynamic coefficients of a SFD are expressed in terms of its design parameters. For the experimental validation of the analysis, a test rig using AMB as an exciter is proposed to identify the dynamic characteristics of a short SFD with a central groove. As an exciter, the AMB represents a mechatronic device to levitate and position the test journal without any mechanical contact, to generate relative motions of the journal inside the tested SFD and to measure the generated displacements during experiments with fairly high accuracy. Using this test rig, experiments are extensively conducted with different clearance, which is one of the most important design parameters, in order to investigate its effect on the dynamic characteristics and the performance of SFDs. Damping and inertia coefficients of the SFD that are experimentally identified are compared with the analytical results to demonstrate the effectiveness of the analysis. It is also shown that AMB is an ideal device for tests of SFDs.

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Transport parameters in a-Se:As films for digital X-ray conversion material (디지털 X-선 변환물질 a-Se:As의 수송변수)

  • Park, Chang-Hee
    • Korean Journal of Digital Imaging in Medicine
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    • v.8 no.1
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    • pp.51-55
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    • 2006
  • The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

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Eutectic Temperature Effect on Au Thin Film for the Formation of Si Nanostructures by Hot Wire Chemical Vapor Deposition

  • Ji, Hyung Yong;Parida, Bhaskar;Park, Seungil;Kim, MyeongJun;Peck, Jong Hyeon;Kim, Keunjoo
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.63-68
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    • 2013
  • We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

Study of ZnS/CIGS Hetero-interface for Cd-free CIGS Solar Cells (Cd-free 태양전지를 위한 ZnS/CIGS 이종접합 특성 향상 연구)

  • Shin, Donghyeop;Kim, Jihye;Go, Youngmin;Yun, Jaeho;Ahn, Byungtae
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.106.1-106.1
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    • 2011
  • The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

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BST Thin Film Multi-Layer Capacitors

  • Choi, Woo Sung;Kang, Min-Gyu;Ju, Byeong-Kwon;Yoon, Seok-Jin;Kang, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.319-319
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    • 2013
  • Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

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Characteristics of Hillock Formation in the Al-1%Si Film by the Effect of Ion Implantation and Substrate Temperature (이온 주입과 기판 온도 효과에 의한 Al-1%Si 박막의 Hillock 형성 특성)

  • Choi, Chang-Auk;Lee, Yong-Bong;Kim, Jeong-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.1
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    • pp.8-13
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    • 2014
  • As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

In-camera VFX implementation study using short-throw projector (focused on low-cost solution)

  • Li, Penghui;Kim, Ki-Hong;Lee, David-Junesok
    • International Journal of Internet, Broadcasting and Communication
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    • v.14 no.2
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    • pp.10-16
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    • 2022
  • As an important part of virtual production, In-camera VFX is the process of shooting actual objects and virtual three-dimensional backgrounds in real-time through computer graphics technology and display technology, and obtaining the final film. In the In-camera VFX process, there are currently only two types of medium used to undertake background imaging, LED wall and chroma key screen. Among them, the In-camera VFX based on LED wall realizes background imaging through LED display technology. Although the imaging quality is guaranteed, the high cost of LED wall increases the cost of virtual production. The In-camera VFX based on chroma key screen, the background imaging is realized by real-time keying technology. Although the price is low, due to the limitation of real-time keying technology and lighting conditions, the usability of the final picture is not high. The short-throw projection technology can compress the projection distance to within 1 meter and get a relatively large picture, which solves the problem of traditional projection technology that must leaving a certain space between screen and the projector, and its price is relatively cheap compared to the LED wall. Therefore, in the In-camera VFX process, short-throw projection technology can be tried to project backgrounds. This paper will analyze the principle of short-throw projection technology and the existing In-camera VFX solutions, and through the comparison experiments, propose a low-cost solution that uses short-throw projectors to project virtual backgrounds and realize the In-camera VFX process.

Perforation Adjustment of Unit Package for 'Fuji' Apples during Short-term Cold Storage and Export Simulation ('후지' 사과의 단기 저온저장 및 모의수출 과정에서 소포장의 천공도 조절 효과)

  • Kim, Su-Jeong;Park, Youn-Moon;Yoon, Tae-Myung
    • Horticultural Science & Technology
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    • v.32 no.2
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    • pp.184-192
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    • 2014
  • Various types of unit packaging methods were applied for 'Fuji' apples during short-term cold storage and export simulation. Gas tightness of the package was controlled stepwise in the successive two-year experiments using different perforation treatments (none, punch hole, or pinhole) and sealing methods (tie v s. heat seal). Risk of tight packaging and effectiveness of macroperforation on weight loss and quality maintenance were analyzed as related to changes in gas concentration inside the packages. Immediately after harvest, each 5 apple units were packaged in $40{\mu}m$ polypropylene (PP) film bags, stored 4 weeks at $0^{\circ}C$, and then put on the shelf for one week at ambient temperature in the preliminary experiment, In the main experiment, export process was imposed after storage simulating 2 week refrigerated container shipment at $0^{\circ}C$ plus one week local marketing at ambient temperature. Non-perforated film packaging with relatively high gas tightness induced flesh browning caused by carbon dioxide accumulation regardless of the sealing methods. Among perforated film packaging, in contrast, atmospheric modification was partly established only in the pinhole treatment and flesh browning symptom was not observed in all the treatments. Even the punch hole perforated film packaging without gas tightness effectively reduced the weight loss, whereas had slight benefits for quality maintenance. Reduced perforation using pinhole treatment seemed to improve sensory texture, while effects on physicochemical quality were insignificant. Overall results suggest the need of more minute perforation treatments on the packaging film to ensure modified atmosphere effects on quality maintenance.

Study on Equivalent Circuit and Bandwidth of Short Wavelength Thin-film Transmission Line Employing ML/CPW composite structure for Miniaturization of wireless Communication System on RFIC (실리콘 RFIC 상에서 무선 통신 시스템의 소형화를 위한 마이크로스트립/코프레너 복합구조를 가지는 박막필름 전송선로의 등가회로 및 대역폭에 관한 연구)

  • Son, Ki-Jun;Jeong, Jang-Hyeon;Kim, Dong-Il;Yun, Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.39 no.1
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    • pp.45-51
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    • 2015
  • In this paper, we study the RF characteristics of the short wavelength thin-film transmission line employing microstrip line (ML)/coplanar waveguide (CPW) composite structure on silicon substrate for application to RFIC (radio frequency integrated circuit). The thin-film transmission line employing ML/CPW composite structure showed a wavelength shorter than conventional transmission lines. Concretely, at 10 GHz, the wavelength of the transmission line employing ML/CPW composite structure was 6.26 mm, which was 60.5 % of the conventional coplanar waveguide. We also extracted the bandwidth characteristic of the transmission line employing ML/CPW composite structure using equivalent circuit analysis. The S parameter of the equivalent circuit showed a good agreement with measured result. According to the bandwidth extraction result, the cut-off frequency of thin-film transmission line employing ML/CPW composite structure was 377 GHz. Above results indicate that the transmission line employing ML/CPW composite structure can be effectively used for application to broadband and compact RFIC.

Studies on Factors Affected on Rooting of Aloe vera Cutting (Aloe vera의 삽목 발근에 미치는 제요인에 관한 연구)

  • Jeong, Ho-Seon;Chim, Jae-Seong;Park, Tae-Eun
    • The Journal of Natural Sciences
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    • v.6 no.1
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    • pp.55-64
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    • 1993
  • Experiments were conducted to study the effect of auxins and cultural factors on rooting characteristics in offshoots cutting of Aloe vera. The result obtained were as follows;1. Short offshoots(15-20cm) with rhizome had more roots than that of the removed rhizome, while long offshoots(25-30cm) without rhizome had more roots and heavier root dry weight than short offshoots with rhizome. The highest rooting ability occured when IBA treated 500mg per liter in short offshoots with rhizome, whereas long offshoots without rhizome showed higher rooting ability at the level of 1,000mg/l of IBA and 200mg/I of NAA2. Among three kinds of anxin treated, both IBA and NAA showed better rooting ability than ethychlozate. Root number, root length and root dry weight were higher at 10 min. dipping treatment of IBA 500mg/I for short off-shoots without rhizome and 10 min. dipping treatment of IBA 1,000mg/l for long offshoots with rhizome. Rooting ability of long offshoots was higher than that of short offshoots.3. In addition to IBA 1,000mg/l, 7-day dryness under shading condition increased root number and dry weight of root in offshoots without rhizome. Control treatment lengthened root by increasing drying period under the shading condition.4. The plain soil with mamure had not only higher root dofferentiation but higher root growth of offshoots cutting than the artificial soil.5. Rooting ability in offshoots cutting had a tendency increasing with decrease in shading percentage to natural. Black color poly ethylene film mulching had better rooting ablility than transparency poly ethlene film mulching in offshoots cutting.

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