• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.87-92
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• 1998

Ultr shallow p$^{+}$-n junction with Co/Ti bilayer silicidde contact was formed by ion implantation of BF$_{2}$ [energy : (30, 50)keV, dose:($5{\times}10^{14}$, $5{\times}10^{15}$/$\textrm{cm}^2$] onto the n-well Si(100) region and by RTA-silicidation and post annealing of the evaporated Co(120.angs., 170.angs.)/Ti(40~50.angs.) double layer. The sheet resistance of the silicided p$^{+}$ region of the p$^{+}$-n junction formed by BF2 implantation with energy of 30keV and dose of $5{\times}10^{15}$/$\textrm{cm}^2$ and Co/Ti thickness of $120{\AA}$/(40~$50{\AA}$) was about $8{\Omega}$/${\box}$. The junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$ -n ultra shallow junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact did not show any agglomeration or variation of sheet resistance value after post annealing at $850^{\circ}C$ for 30 minutes. The boron concentration at the epitaxial CoSi$_{2}$/Si interface of the fabricated junction was about 6*10$6{\times}10^{19}$ / $\textrm{cm}^2$./TEX>.

• Journal of the Korean Society of Radiology
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• v.17 no.2
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• pp.249-255
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• 2023

In this study, radiation exposure doses were measured in the course of clinical practice of radiation workers, radiological technologists in the radiation-related worker group, and preliminary-radiological technologists who were classified as frequent visitors. Radiological technologists who worked in the radiation area of C University Hospital in Incheon for a year from January 2021 and 121 students who completed clinical practice at the same medical institution from July 1 to August 31 were the subjects of the study. The nominal risk factor based on ICRP 103 was used to evaluate the probability of side effects due to the exposure dose to the lungs, which are organs at risk of damage due to radiation exposure dose. During the clinical practice period, radiology students, who were classified as frequent visitors, had a surface dose of 0.98 ± 0.14 mSv and a deep dose of 0.93 ± 0.14 mSv. In other words, 6.7 per 1,000,000 for shallow dose and 6.4 per 1,000,000 for deep dose were found to have side effects due to exposure to the lungs. This is a value in terms of exposure dose in one year. Considering that the radiation (science) education course is 3 or 4 years, systematic management and attention to prospective radiation workers who are going to clinical practice are required, and the stochastic effect of radiation In relation to this, it is considered that it will be used as basic data for radiation safety management.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Journal of radiological science and technology
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• v.17 no.1
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• pp.49-54
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• 1994

This study was conducted to find out the medical exposure dose in simple abdomen A-P projection of adults, based on the 87 hospitals located in Seoul. As the results, the following conclusions have been reached; 1. 88.5 % of the surveyed hospitals had the use of $65\;kVp{\sim}79\;kVp(M{\pm}SD:71.45{\pm}4.73\;kVp)$ as tube voltage. 2. 87.35 % of the surveyed hospitals had the use of $50\;mAs{\sim}89\;mAs(M{\pm}SD:64.31{\pm}16.21\;mAs)$ as the amount of current. 3. Shallow doses ranged from 2.00 mSv to 4.99 mSv($M{\pm}SD:3.81{\pm}1.01\;mSv$) in 80.46 % of the surveyed hospitals. 4. Exposure dose was directly depended on the tube voltage or the amount of currents.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.1-5
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• 2005

Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diffusion of the tail and a large amount of dose loss in the extension region. This problem comes from the high-temperature long-time deposition process for forming the spacer and the presence of fluorine which diffuses quickly to the $Si/SiO_{2}$ interface with boron pairing. We have studied the method to improve the pMOS performance that includes the low-energy boron implantation, spike annealing and device structure design using TCAD simulation.

• Journal of radiological science and technology
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• v.41 no.2
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• pp.129-134
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• 2018

The present study made a phantom for gamma ray of 140 keV radiated from $^{99m}Tc$, examined shielding effect of lead by thickness of the shielding material, and measured surface dose and depth dose by body depth. The OSL Nano Dot dosimeter was inserted at 0, 3, 15, 40, 90, and 180 mm depths of the phantom, and when there was no shield, 0.2 mm lead shield, 0.5 mm lead shield, The depth dose was measured. Experimental results show that the total cumulative dose of dosimeters with depth is highest at 366.24 uSv without shield and lowest at 94.12 uSv with 0.5 mm lead shield. The shielding effect of 0.2 mm lead shielding was about 30.18% and the shielding effect of 0.5 mm lead shielding was 74.30%, when the total sum of the accumulated doses of radiation dosimeter was 100%. The phantom depth and depth dose measurements showed the highest values at 0 mm depth for all three experiments and the dose decreases as the depth increases. This study proved that the thicker a shielding material, the highest its shielding effect is against gamma ray of 140 keV. However, it was known that shielding material can't completely shield a body from gamma ray; it reached deep part of a human body. Aside from the International Commission on Radiation Units and Measurements (ICRU) recommending depth dose by 10 mm in thickness, a plan is necessary for employees working in department of nuclear medicine where they deal with gamma ray, which is highly penetrable, to measure depth dose by body depth, which can help them manage exposed dose properly.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.113-121
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• 1993

In the formation of the shallow p$^{+}$-n junction, the preamorphization method by As$^{+}$ ions was applied in order to avoid the boron channeling effect which is occured during the B$^{+}$ implantation especially with low energy. By As$^{+}$ pre-implant with 60KeV energy and 2*10$^{14}$ cm$^{-2}$ dose, the channelinf of B$^{+}$ ions implanted with 10keV/1.5*10$^{14}$ cm$^{-2}$ can be avoded completely. After the RTA of 1050.deg. C and 10sec, the junction depth was 0.14.mu.m, the leakage current was 20nA/cm$^{2}$(at-5V bias) and the sheet resistance was 107.OMEGA./ㅁ. And the preamorphized Si layer was changed into the perfect crystal si after the RTA.r the RTA.

• Journal of Radiation Industry
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• v.11 no.3
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• pp.123-130
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• 2017

Concerns about high radiation exposure to the hands of radiation workers who may contact with radioactive contamination on surfaces in a nuclear power plant (NPP) had been raised, and the Korean regulatory body required the extremity dose estimation during contact tasks with radioactive materials. Korean NPPs conducted field tests to identify the incident radiation to the hands of radiation workers who may contact with radioactive contamination during maintenance periods. The results showed that the radiation fields for contact tasks are dominated by high energy photons. It was also found that the radiation doses to the hands of radiation workers in Korean NPPs were much less than the annual dose limits for extremities. This approach can be applicable to measure and estimate the extremity dose to the hands of medical workers who handle the radioactive materials in a hospital.

• Proceedings of the Korea Contents Association Conference
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• 2009.05a
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• pp.1118-1123
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• 2009

Ten hospitals from the Gwangju area were used to examine shallow dose to eyes and thyroid from panoramagraphy. Thermoluminescent dosimeter (TLD) and Photoluminescent dosimeter (PLD) were used as measurement devices at each hospital. ICRP 60 and ICRP 73 set standards for acceptability for eyes at 15mSv and thyroid at 1mSv per year. Left eye measures with TLD and PLD resulted in 0.19mSv and 0.24mSv respectively. Right eye measures with TLD and PLD resulted in 0.23mSv and 0.25mSv respectively. Thyroid measures with TLD and PLD resulted in 0.08mSv and 0.25mSv respectively with both measures not exceeding standards for acceptance. There was a significant difference in comparing the left eye and thyroid for TLD and PLD (p<0.01). There was no significant difference with the right eye (p>0.05). The absorbed dose measurements for eyes and thyroid using TLD and PLD in regards to panorama devices at each hospital were within the ICRP 60 recommendations; however, with the possibility of stochastic effect, all dose levels were taken into consideration.