• Journal of the Korean Society for Precision Engineering
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• v.23 no.3 s.180
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• pp.56-60
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• 2006

A high-resolution shadow mask, or called a nanostencil was fabricated for high resolution lithography. This high-resolution shadowmask was fabricated by a combination or MEMS processes and focused ion beam (FIB) milling. 500 nm thick and $2{\times}2mm$ large membranes wore made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane. By local deposition through the apertures of nanostencil, nanoscale patterns down to 70 nm could be achieved.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.871-874
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• 2004

Fabrication of a high-resolution shadow mask, or called nanostencil, is presented. This high-resolution shadowmask is fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. 500 nm thick and 2x2 mm large membranes are made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. Subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to high resolution of FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.2
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• pp.245-250
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• 2011

A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.881-884
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• 2004

The robust and large-area applicable metal shadow masks with a high aspect ratio more than 20 are fabricated by a combination of micro-electro-discharge machining (${\mu}$-EDM) and electro chemical etching (ECE). After defining S/D contacts using a 100 ${\mu}m$ thick stainless steel shadow mask, the top-contact pentacene TFTs with channel length of 5 ${\mu}m$ showed routinely the results of mobility of 0.498 ${\pm}$ 0.05 $cm^2$/Vsec, current on/off ratio of 1.6 ${times}$ $10^5$, and threshold voltage of 0 V. The straightly defined atomic force microscopy (AFM) images of channel area demonstrated that shadow effects caused by the S/D electrode deposition were negligible. The fabricated pentacene TFTs have an average channel length of 5 ${\pm}$ 0.25 ${\mu}m$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.41-47
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• 1999

In this paper, we report 3D-simulations of a plasma etching process by employing cell-removal algorithm takes into account the mask shadow effect os well as spillover errors. The developed simulator haas an input interface to take not only an analytic form but a Monte Carlo distribution of the ions. The graphic user interface(GUI) was also built into the simulator for UNIX environment. To demonstrate the capability of 3D-SURFILER(SURface proFILER), we have simulated for a typical contact hole structure with 36,000($30{\times}40{\times}30$) cells, which takes about 20 minutes with 10 Mbytes memory on sun ultra sparc 1. as an exemplary case, we calculated the etch profile during the reactive ion etching(RIE) of a contact hole wherein the aspect ratio is 1.57. Furthermore, we also simulated the dependence of a damage parameter and the evolution of topography as a function of the chamber pressure and the incident ion flux.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1364-1369
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• 2004

New method for the design, fabrication, and calibration of micro-machined heat flux sensor has been developed. Two types of micro-machined heat flux sensor having different thicknesses of the thermal-resistance layer are fabricated using the MEMS technique. Photo-resist patterning using a chrome mask, bulk-etching and copper-nickel sputtering using a shadow mask are applied to make heat flux sensors, which are calibrated in the convection-type heat flux calibration facility. The sensitivity of the device varies with thermal-resistance layer, and hence can be used to measure the heat flux in heat-transfer phenomena.

• Applied Chemistry for Engineering
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• v.7 no.4
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• pp.614-622
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• 1996

Efficient removal of nickel from the ferric chloride etching solution has been studied. At first, $Fe^{3+}$ was reduced to $Fe^{2+}$ by the electrolytic iron flake or the waste shadow mask iron plate. And then, $Ni^{2+}$ was removed from the solution by electrolytic iron powder. Under the optimum conditions the reduced rates of nickel were 99 % and 98%, respectively at the initial $Ni^{2+}$ concentrations of 1.0% and 0.1%. Sludge formed during reduction of $Fe^{3+}$ in the solution were analyzed by XRD and SEM.

• Journal of the Korean Chemical Society
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• v.58 no.6
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• pp.524-527
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• 2014

We report a simple yet efficient method to assemble large-scale aligned graphene nanoribbons (GNRs) with a width as small as 30 nm. The $V_2O_5$ nanowires (NWs) were aligned on a graphene surface via spraying a solution of the $V_2O_5$ NWs, and the graphene was selectively etched by the reactive ion etching method using the $V_2O_5$ NWs as a shadow mask. This process allowed us to prepare large scale patterns of the aligned GNRs on a $SiO_2$ substrate. The orientation of the aligned and randomly oriented GNRs was compared by the atomic force microscope (AFM) images. We achieved the highly aligned GNRs along the flow direction of the $V_2O_5$ NWs solution. Furthermore, we successfully fabricated a field effect-transistor with the aligned GNRs and measured its electrical properties. Since our method enable to prepare the aligned GNRs over a large area, it should open up new way for the various applications.

• Clean Technology
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• v.13 no.4
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• pp.274-280
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• 2007

A liquid-liquid solvent extraction process was developed in this study to recover Fe and Ni from heavily concentrated aqueous ferric chloride solution, in an effort to substitute the conventional iron reduction method. Solvent composition and extraction conditions were first developed from the laboratory experiments, and the pilot system was designed and built for commercialization. Stage numbers for extraction and stripping were determined from pilot plant runs, and other operation data were obtained for mass production.