• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.483-489
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• 2010

Display quality depends on panel temperatures. To compensate it, temperature sensor was integrated on the panel. The conventional temperature sensor integrated on the panel needs external reference resistor. Since the resistance of external resistor can vary according to the variation of the environment temperature, the conventional temperature sensor can make error in temperature sensing. The environmental temperatures can change by the back light unit, driving circuits or chips. In this paper, we proposed a integrated temperature sensor on display panel which does not need external reference resister. Instead of external reference resistor, we used two materials which have different temperature coefficient in resistivity. They are connected serially and the output voltage was measured at the point of connection with the applied voltage to both ends. The proposed sensor was fabricated with indium tin oxide(ITO), and Mo metal electrode temperature sensor which were connected serially. We verified the temperature senor by the measurements of sensitivity, lineality, hysteresis, repeatability, stability, and accuracy.

• Korean Journal of Optics and Photonics
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• v.23 no.4
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• pp.143-146
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• 2012

All-optical data extraction, one of the key technologies for all-optical computing and optical communication to perform add-drop, packet switching, and data reset, etc., is experimentally demonstrated by using cross-gain modulation (XGM) of semiconductor optical amplifiers (SOAs). Also, all-optical data extraction based on numerical simulation is performed by using the VPI simulation tool. In this paper, the suggested optical system based on SOAs shows the potential for high speed, and highly integrable and low power optical data computing.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.93-98
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• 2023

As semiconductor devices become highly integrated and process difficulty increases, the need for highly sensitive sensors that can detect micro leaks is increasing. However, the noise contained in the CCD sensor itself acts as an obstacle to detecting fine leaks. In this study, integration time was changed for each condition, the sensor was cooled to 0℃, and the dark voltage level was measured to confirm through experiment the characteristics of the temporal noise included in the CCD sensor, a component of OES (Optical Emission Spectroscopy). When integration time was reduced from 30msec to 10msec, the dark voltage level decreased by about 20.5 % from an average of 151.5mV to 120.5mV. In the case of cooling device, Peltier elements were selected because of their simple structure and small size. During temperature cooling, the target temperature was controlled to within ±0.5℃ through PID control. When cooled from 20℃ to 0℃ using this cooling device, it was confirmed that the dark voltage level decreased by about 7% from an average of 147.0mV to 137.0mV.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.87-92
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• 2023

As the elderly population increases, the number of patients with various joint diseases, including degenerative arthritis, is steadily increasing. CPM medical devices are needed to effectively treat degenerative arthritis that is common in the elderly population. Domestic CPM medical devices have limited functions and are highly dependent on imports for expensive imported medical devices. To solve this problem, we designed a ROM measurement function using a current sensor that is not present in existing composite joint CPM medical devices. The algorithm was designed using the fact that the force caused by joint stiffness greatly increases the current flowing through the DC motor. In addition, the need for digital healthcare in the medical field is gradually expanding as the proportion of chronically ill patients increases due to the spread of the non-face-to-face economy due to COVID-19 and the aging population. Therefore, this paper aims to improve the performance of CPM medical devices by allowing real-time confirmation of rehabilitation exercise information and operation range measurement results in accordance with digital healthcare trends through a Bluetooth application developed as an Android studio.

• Journal of Surface Science and Engineering
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• v.57 no.3
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• pp.208-213
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• 2024

With the development of industry, miniaturization and densification of semiconductor components are rapidly progressing. Particularly, as demand surges across various sectors, efficiency in productivity has emerged as a crucial issue in semiconductor component manufacturing. Maximizing semiconductor productivity requires real-time monitoring of semiconductor processes and continuous reflection of the results to stabilize processes. However, various unexpected variables and errors in judgment that occur during the process can cause significant losses in semiconductor productivity. Therefore, while the development of a reliable manufacturing system is important, the importance of developing sensor technology that can complement this and accurately monitor the process is also growing. In this study, conducted a basic research on the concept of diagnostic sensors for thickness based on the physical changes of thin films due to etching. It observed changes in resistance corresponding to variations in thin film thickness as etching processes progressed, and conducted research on the correlation between these physical changes and thickness variations. Furthermore, to assess the reliability of thin film thickness measurement sensors, it conducted multiple measurements and comparative analyses of physical changes in thin films according to various thicknesses.

• Journal of IKEEE
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• v.27 no.4
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• pp.501-511
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• 2023

This paper introduces and analyzes SAE J2716 SENT (Single Edge Nibble Transmission) protocol, a technical standard for serial transmission of digital sensor data in automotive applications. SENT can transmit both high-speed sensor data and low-speed sensor data in one data frame and has a total of 6 transmission modes, including 3 high-speed channel modes and 3 low-speed channel modes. In this paper, a SENT controller that supports all six modes of the SENT protocol was designed in Verilog HDL, implemented in FPGA, and verified with an oscilloscope and PC.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.125-133
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• 2024

Gas chromatography (GC) separation technology and metal oxide semiconductor (MOS) gas sensors have been integrated for the effective analysis of volatile sulfur compounds (VSCs) such as H₂S, CH₃SH, (CH₃)₂S, and (CH₃)₂S₂. The separation and detection characteristics of the GC/MOS system using diluted standard gases were investigated for the qualitative and quantitative analysis of VSCs. The typical concentrations of the standard gases were 0.1, 0.5, 1.0, 5.0, and 10.0 ppm. The GC/MOS system successfully separated H₂S, CH₃SH, (CH₃)₂S, and (CH₃)₂S₂ using a celite-filled column. The reproducibility of the retention time measurements was at a 3% relative standard deviation level, and the correlation coefficient (R²) for the VSC concentration was greater than 0.99. In addition, the chromatograms of single and mixed gases were almost identical.

• Proceedings of the IEEK Conference
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• 2003.07d
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• pp.1549-1552
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• 2003

Semiconductor gas sensor using tin oxide as sensing material has been used to detect gases based on the fact that impedance of the sensing material varies when the gas sensor is exposed to the gases. This variation comprises of two parts. The first one is variation in resistance of the sensing material and the other is expressed in terms of the sensor capacitance variation. Normally, only variation of the sensor resistance is considered. In this paper, using AC measurement with a capacitor-coupled inverting amplifier circuit, both changes in the sensor resistance and variations in the sensor capacitance were investigated. These characteristics were represented as magnitude gain and phase shift of AC signal at a specific frequency after passing it through the sensor and the designed circuit. A two-stage artificial neural network, which utilized the information above, was employed to identify and quantify three combustible gases: methane, propane and butane. The network outputs were approximately proportional to concentrations of test gases with reasonable level of error.

• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.1-7
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• 2015

In this paper, a new capacitive pressure sensor has been proposed for a displacement measurement. The new sensor is mainly composed of a gap of $5{\mu}m$ and a notch of $1{\mu}m$. And the sensor has the performance as the high sensitivity and capacitance compared with a commercial capacitive sensor. Therefore, the advantages of the new capacitive pressure sensor are good sensitivity in normal range, mechanically robust and large overload protection. The analytical model is induced for confirming the performance of the proposed sensor. In addition, FEM (finite elements method) simulation has been performed to verify the analytical model. Firstly, the displacement characteristics of diaphragm membrane were simulated by the analytical model and FEM in the case of different structure and materials. At last, through this analysis, these simulation results can be predicted the change of the performance when the device parameters are varied. And it is used as a design tool to achieve at a set of performance we desired.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.11
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• pp.1164-1169
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• 2012

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.