• Title/Summary/Keyword: semiconductor technology

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Blazed $GxL^{TM}$ Device for Laser Dream Theater at the Aichi Expo 2005

  • Ito, Yasuyuki;Saruta, Kunihiko;Kasai, Hiroto;Nishida, Masato;Yamaguchi, Masanari;Yamashita, Keitaro;Taguchi, Ayumu;Oniki, Kazunao;Tamada, Hitoshi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.556-559
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    • 2006
  • We successfully developed a high performance and highly reliable blazed GxL device with a high optical efficiency and a high contrast ratio. The device demonstrated superior resistance against a high power laser, which is suitable for a large-area laser projector. We operated the world's largest laser projection screen using this device at the 2005 World Exposition in Aichi, Japan, problem free.

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Fabrication of Nanopatterns by Using Diblock Copolymer

  • KANG GIL BUM;KIM SEONa-IL;KIM YONG TAE;KIM YOUNG HHAN;PARK MIN CHUL;KIM SANG JIN;LEE CHANG WOO
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.09a
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    • pp.183-187
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    • 2005
  • Thin films of diblock copolymers may be suitable for semiconductor device applications since they enable patterning of ordered domains with dimensions below photolithographic resolution over wafer-scale area. We obtained nanometer-scale cylindrical structure of dibock copolymer of polystyrene-block-poly(methylmethacrylate), PS-b-PMMA, also demonstrate pattern transfer of the nanoporous polymer using both reactive ion etching. The size of fabricated naonoholes were about 10 nm. Fabricated nanopattern surface was observed by field emission scanning electron microscope (FESEM).

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Synthesis of High Purity Multiwalled and Singlewalled Carbon Nanotubes by Arc-discharge

  • Kim, Keun-Soo;Park, Young-Soo;An, Kay-Hyeok;Jeong, Hee-Jin;Kim, Won-Seok;Choi, Young-Chul;Lee, Seung-Mi;Moon, Jeong-Mi;Chung, Dong-Chul;Bae, Dong-Jae;Lim, Seong-Chu;Lee, Young-Seak;Lee, Young-Hee
    • Carbon letters
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    • v.1 no.2
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    • pp.53-59
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    • 2000
  • The synthetic methods for high yield of multiwalled carbon nanotube (MWNT) and singlewalled carbon nanotube (SWNT) with high purity by arc discharge have been investigated. MWNTs were synthesized under different pressures of helium and the gas mixture of argon and hydrogen. Relatively high pressure of 300-400 torr was required for high yield MWNTs synthesis at low bias voltage of about 20 V and 55 A, whereas low pressure of about 100 torr was required for SWNTs. The introduction of hydrogen gases during the synthesis of MWNTs improved the yield and purity of the samples. The SWNTs were synthesized by the assistance of a small amount of mixture of transition metals, which played as a catalyst during the formation process. The purity and yield of SWNTs were higher at a lower pressure and enhanced by mixing more components of the transition metals.

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