• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.319-325
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• 2017

Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.2
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• pp.79-83
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• 2011

Magnetic seal uses a magnetic fluid to seal a gap between a rotating shaft and housing. It is distinguished from other kinds of seals from the fact that solid contact does not occur in the seal. This implies that it is free from solid rubbing thus dustless and provides a clean circumstance. That is the reason why the magnetic seal is used exclusively for most of vacuum chambers in semiconductor process where dustless clean circumstance is critical. A magnetic seal has been developed of which design parameters are determined based on published data, and an air pressure test has been done to examine its sealing capability. Effects of some design parameters have been studied through FEM analysis. The results show some notable aspects of design parameters and provide suggestions for developing the seals. Regarding the sealing capacity of the magnetic seal the factor to match the theoretical value with the actual one was found to be 0.4~0.7, which means still there is some discrepancy between theory and actual.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.80-85
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• 2018

The present investigation on optical fiber mass manufacturing features the computational modeling and simulation on a double layer liquid coating process on glass fiber surface. The computational model employs a simplified geometry of typical fiber coating system which consists of primary and secondary coating dies along with secondary coating cup. The viscous dissipation in coating flow is incorporated into the double layer coating process simulations. Heavy temperature dependence of coating liquid viscosity is also considered in the model. The computational results found that the effects of viscous dissipation on both primary and secondary coating layer thicknesses are highly significant at higher drawing speed. Several important coating process parameters such as supply temperature and pressure of primary and secondary coating liquids are investigated and discussed in order to appreciate how those parameters affect the double layer coating layer thickness on fast moving glass fiber.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.119-123
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• 2023

This study is normal orientation technology of slit coating equipment to improve the quality of curved displays. Currently, the demand for curved displays is increasing significantly due to advantages such as screen immersion or design in various industries. Accordingly, changes in the display coating process are essential. In the curved display coating process, unlike the existing flat coating process, the nozzle must be rotated along the curvature of the curved surface to spray the coating solution. The coating solution must be applied while maintaining a uniform thickness. If the thickness of the coating liquid applied to the target surface is non-uniform, the quality of the product may be degraded such as image quality deterioration and light spreading. This paper presents technology and experimental results for keeping the nozzle of slit coating equipment perpendicular to the curved surface and is expected to contribute to the quality improvement of curved displays.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.12
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• pp.123-128
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• 2021

Liquid dispensing systems are extensively used in various industries such as display, semiconductor, and battery manufacturing. Of the many types of dispensers, drop-on-demand piezoelectric jetting systems are widely used in semiconductor industries because of their ability to dispense minute volumes with high precision. However, due to the problems of nozzle clogging and undesirable dispensing behavior in these dispensers, which often result in device failure, the use of highly viscous fluids is limited. Accordingly, we studied the behaviors of droplet formation based on changes in viscosity. The effects of surface energy and the inner diameters of needle-type nozzles were also studied. Results showed that nozzles with lower surface energies reduced the ejection volume of droplets when a smaller nozzle diameter (0.21 mm in this study) was applied. These results indicate that the hydrophobic treatment of nozzle surfaces and the use of smaller nozzle diameters are critical factors enabling the use of highly viscous fluids in precision dispensing applications.

• Journal of the Korea Organic Resources Recycling Association
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• v.32 no.1
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• pp.39-47
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• 2024

In this study, LiDAR-detective black material is synthesized by recycling silicon sludge (SS) that is generated from semiconductor manufacturing process, and its recognition is confirmed using two types of LiDAR sensors (MEMS and Rotating LiDAR). In detail, metal impurities on the surface of SS is removed, followed by coating of titanium dioxide (TiO₂) and subsequent chemical reduction to obtain SS-derived black TiO₂ (SS/bTiO₂) material. As-prepared SS/bTiO₂ is mixed with transparent paint to prepare hydrophilic black paints and applied to a glass substrate using a spray gun. SS/bTiO₂-based paint shows similar blackness (L^*=15.7) compared to commercial carbon black-based paint, and remarkable NIR reflectance (26.5R%, 905nm). Furthermore, MEMS and Rotating LiDAR have successfully detected the SS/bTiO₂-based paint. This is attributed to the occurrence of high reflection of light at the interface between the black TiO₂ and the silicon sludge according to the Fresnel's reflection principle. Hence, the new application field to effectively recycle silicon sludge generated in the semiconductor manufacturing process has been presented.

• Journal of the Korean Data and Information Science Society
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• v.18 no.3
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• pp.773-782
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• 2007

The statistical process control charts are very extensively used for monitoring of process mean, deviation, defect rate or reject rate. In this paper we consider a control chart to monitor the process reject rate in the high yield process, which is based on the observed cumulative probability of the number of items inspected until r defective items are observed. We first propose selection of the optimal value of r in the CPC-r charts, and also consider the usefulness of the chart in high yield process such as semiconductor or TFT-LCD manufacturing process.

• Journal of the Korea Society for Simulation
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• v.19 no.3
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• pp.45-54
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• 2010

The inherent complexity of semiconductor fabrication processes makes it hard to solve well-known job scheduling problems in analytical ways, which leads us to rely practically on discrete event modeling simulations to learn the effects of changing the system's parameters. Meanwhile, unpredictable disturbances such as machine failures and maintenance diminish the productivity of semiconductor manufacturing processes with fixed scheduling policies; thus, it is necessary to adapt job scheduling policy in a timely manner in reaction to critical environmental changes (disturbances) in order for the fabrication process to perform optimally. This paper proposes an adaptive job control framework for a wafer fabrication process in a control system theoretical approach and implements it based on a DEVS modeling simulation environment. The proposed framework has the advantages in view of the whole systems understanding and flexibility of applying new rules compared to most ad-hoc software approaches in this field. Furthermore, it is flexible enough to incorporate new job scheduling rules into the existing rule set. Experimental results show that this control framework with adaptive rescheduling outperforms fixed job scheduling algorithms.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.1
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• pp.1-16
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• 2023

Recently, the shift to next-generation wide-bandgap (WBG) power semiconductor for electric vehicle is accelerated due to the need to improve power conversion efficiency and to overcome the limitation of conventional Si power semiconductor. With the adoption of WBG semiconductor, it is also required that the packaging materials for power modules have high temperature durability. As an alternative to conventional high-temperature Pb-based solder, Ag sintering die attach, which is one of the power module packaging process, is receiving attention. In this study, we will introduce the recent research trends on the Ag sintering die attach process. The effects of sintering parameters on the bonding properties and methodology on the exact physical properties of Ag sintered layer by the realization 3D image are discussed. In addition, trends in thermal shock and power cycle reliability test results for power module are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.