• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.49-54
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• 2020

The voltage drop due to the thin cathode film at the large size top emission OLED panel was successfully compensated with making electrical contact between thin cathode and anode auxiliary electrode by 355nm wavelength of laser. It was found that the luminance uniformity dramatically increased from around 15% to more than 80% through this electrical compensation between thin cathode and anode auxiliary electrode. Moreover, the removing process for EL materials on the anode auxiliary electrode process by laser was very reliable and stable. Therefore, it is thought that the EL removal method using laser to make electrical contacts is very appropriate to mass production for such a large size top emission OLEDs to obtain high uniformity of luminance.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.77-82
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• 2021

This numerical study focuses on the analysis of fume particle dispersion characteristics over the surface of target workpiece in laser micro-hole machining process. The effects of oblique stagnation flow over fume generating machining point are examined by carrying out a series of three-dimensional random particle simulations along with probabilistic particle generation model and particle drag correlation of low Reynolds number. Present computational model of fume particle dispersion is found to be capable of assessing and quantifying the fume particle contamination in precision hole machining which may influenced by different types of air flow patterns and their flow intensity. The particle size dependence on dispersion distance of fume particles from laser machining point is significant and the effects of increasing flow oblique angle are shown quite differently when slot blowing or slot suction flows are applied in micro-hole machining.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.1-6
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• 2023

In CO₂ laser surface machining of plastic films in modern display manufacturing, scattering of fume particles could be a major source of well-recognized film surface contamination. This computational fluid dynamics research investigates the suction air flow patterns over a film surface as well as the dispersion of micron-sized fume particles with low-Reynolds number particle drag model. The numerical results show the recirculatory flow patterns near laser machining point on film surface and also over the surface of vertical suction slot, which may hinder the efficient removal of fume particles from film surface. The dispersion characteristics of fume particles with various particle size have been tested systematically under different levels of suction flow intensity. It is found that suction removal efficiency of fume particles heavily depends on the particle size in highly nonlinear manners and a higher degree of suction does not always results in more efficient particle removal.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.187-188
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• 2013

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.101-108
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• 1998

We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.

• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.281-284
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• 2007

We have analyzed the short pulse generation using heterodyne techniques. The numerical model for semiconductor lasers under the heterodyne technique is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The unselected sidebands will affect the optical and RF-spectral characteristics even when the semiconductor laser is locked to the target sidebands.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.503-506
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• 1998

We demonstrate stable return-to-zere direct pulse modulation of a gain-switched DFB semiconductor laser at a data rate of 2.5 Gbit/s. The effects of change in drive conditions on eye diagrams of the outputs are explored and an optimum operating regime is determined.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.216-231
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• 2001

Several methods for improving device yields and characteristics have been studied by IC manufacturers, as the options for programming components become diversified through the introduction of novel processes. Especially, the sequential repair steps on wafer level and package level are essentially required in DRAMs to improve the yield. Several repair methods for DRAMs are reviewed in this paper. They include the optical methods (laser-fuse, laser-antifuse) and the electrical methods (electrical-fuse, ONO-antifuse). Theses methods can also be categorized into the wafer-level(on wafer) and the package-level(post-package) repair methods. Although the wafer-level laser-fuse repair method is the most widely used up to now, the package-level antifuse repair method is becoming an essential auxiliary technique for its advantage in terms of cost and design efficiency. The advantages of the package-level antifuse method are discussed in this paper with the measured data of manufactured devices. With devices based on several processes, it was verified that the antifuse repair method can improve the net yield by more than 2%~3%. Finally, as an illustration of the usefulness of the package-level antifuse repair method, the repair method was applied to the replica delay circuit of DLL to get the decrease of clock skew from 55ps to 9ps.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.79-81
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• 1990

Temperature distribution of laser diode chip mounted on ideal heat kink was calculated by numerical analysis. In numerical analysis, infinite difference method and Gauss-Scidel iteration was adopted on the basis of two dimensional heat conduction phenomena. As a result, temperature increase of active medium of laser diode driven at 60mA was calculated to be 1.47$^{\circ}C$

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.87-87
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• 1996